• Current Optics and Photonics
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• v.2 no.6
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• pp.514-518
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• 2018

Carrier diffusion length in the light-sensitive material is one of the key elements in improving the light-current conversion efficiency of solar-cell devices. In this paper, we measured the carrier diffusion length in lead-halide perovskite ($MAPbI_3$) and mixed lead-halide ($MAPbI_{3-x}Cl_x$) perovskite devices using scanning photocurrent microscopy (SPCM). The SPCM signal decreased as we moved the focused laser spot away from the metal contact. By fitting the data with a simple exponential curve, we extracted the carrier diffusion length of each perovskite film. Importantly, the diffusion length of the mixed-halide perovskite was higher than that of the halide perovskite film by a factor of 3 to 6; this is consistent with the general expectation that the carrier mobility will be higher in the case of the mixed lead-halide perovskites. Finally, the diffusion length was investigated as a function of applied bias for both samples, and analyzed successfully in terms of the drift-diffusion model.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.16-21
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• 2006

A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.

• Journal of the Korean Society of Combustion
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• v.22 no.2
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• pp.19-26
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• 2017

An experimental study investigates the flame response characteristics of jet-diffusion flame and premixed flame. The experiment was conducted while varying the amplitude. Flame lengths were quantified for OH chemiluminescence measurement and compared with the result of the flame transfer function. Flame length and flame velocity perturbation were normalized and compared with the result of the flame transfer function. The comparison results appear that velocity perturbation and flame length oscillation of premixed flame show linear behaviors on the other hand jet-diffusion flame, amplitudes are more thant 0.20, shows nonlinear behaviors of flame velocity perturbation and flame length oscillation.

• Journal of Powder Materials
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• v.24 no.3
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• pp.248-253
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• 2017

In this study, we investigate the effect of the diffusion barrier and substrate temperature on the length of carbon nanotubes. For synthesizing vertically aligned carbon nanotubes, thermal chemical vapor deposition is used and a substrate with a catalytic layer and a buffer layer is prepared using an e-beam evaporator. The length of the carbon nanotubes synthesized on the catalytic layer/diffusion barrier on the silicon substrate is longer than that without a diffusion barrier because the diffusion barrier prevents generation of silicon carbide from the diffusion of carbon atoms into the silicon substrate. The deposition temperature of the catalyst and alumina are varied from room temperature to $150^{\circ}C$, $200^{\circ}C$, and $250^{\circ}C$. On increasing the substrate temperature on depositing the buffer layer on the silicon substrate, shorter carbon nanotubes are obtained owing to the increased bonding force between the buffer layer and silicon substrate. The reason why different lengths of carbon nanotubes are obtained is that the higher bonding force between the buffer layer and the substrate layer prevents uniformity of catalytic islands for synthesizing carbon nanotubes.

• Korean Management Science Review
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• v.32 no.4
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• pp.81-96
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• 2015

This paper models knowledge diffusion on an inter-organizational network. Based on literatures related to knowledge diffusion, the model considers critical factors that affect diffusion behavior including nodal property, relational property, and environmental property. We examine the relationships among network structure, knowledge search, and diffusion performance. Through a massive simulation runs based on the agent-based model, we find that the average path length of a network decreases a firm's cumulative knowledge stock, whereas the clustering coefficient of a firm has no significant relationship with the firm's knowledge. We also find that there is an interaction effect of network structure and the range of knowledge search on knowledge diffusion. Specifically, in a network of a larger average path length (APL) the marginal effect of search conduct is significantly greater than in that of a smaller APL.

• Journal of ILASS-Korea
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• v.13 no.1
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• pp.22-27
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• 2008

The false diffusion occurs generally when the flow is oblique to the grid lines and when there is a non-zero gradient of the dependent variable in the direction normal to the flow. This numerical problem can overestimate diffusion terms in the continuous phase, causing the numerical inaccuracy for the simulation of impinging sprays on inclined walls because most of spray calculation uses rectangular grid system. Therefore, the main objective of this article is to investigate numerically the influence of false diffusion on numerical simulation for spray-wall impingement on inclined walls. It is found that unlike the spray impingement normal to the wall, the numerical diffusion exists in the case when diesel sprays impinge on the inclined walls with different angles. The results show that the correction function should be considered for accurate prediction of spray penetration length and more elaborate numerical schemes should be utilized to reduce the false diffusion.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.41-45
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• 2012

We observed that in chemical vapor deposition (CVD) tungsten silicide (WSix) poly gate scheme, the gate oxide thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In DRAM cells where the channel length is extremely small, we found the thinned gate oxide is a main cause of poor retention time.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.474-477
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• 1998

We discuss the surface diffusion process of an adsorbed gas molecules by the method of Markoff probability process and give a relationship between the surface diffusion length and the surface coverage of an adsorbed molecule.

• Solar Energy
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• v.5 no.2
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• pp.54-59
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• 1985

Due to the grainboundary recombination and the poor diffusion length, the polycrystalline cell efficiency is lower than the singlecrystalline cell. In order to define the effect of grains and grain-boundaries, 2 - dimensional differential diffusion equations of minority carrier are modelled. To solve them, two theoretical formulas are derived, which can be evaluated the grainboundary recombination velocity and the grain diffusion length. Also computer-aided numerical analysis is given.

• Journal of the Semiconductor & Display Technology
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• v.10 no.3
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• pp.29-33
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• 2011

Film growth rate and composition variation are numerically analyzed during the selective area growth of InGaN on the GaN triangular stripe microfacet in this study. Both the vapor phase diffusion and the surface diffusion are considered to determine the In composition on the InGaN surface. To obtain the In composition on the surface, flux of In atoms due to the surface diffusion is added to the concentration determined from the Laplace equation which is governing the gas phase diffusion. The solution model is validated by comparing the growth rates from the analyses to the experimental results of GaN and InN films. The In composition and resulting wave length are increased when the surface diffusion is considered. The In content is also increased according to the increasing mask width. The effect of mask width to the In content and wave length is increasing in the case of a small open region.