• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.1007-1013
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• 1998

In this paper, the dielectric properties of fabricated Polyvinylidene fluoride(PVDF, $PVF_2$) thin film with substrate temperature from 30 to at vapor deposition. The dielectric properties of PVDF thin film had been studied in the frequency range from 10Hz to 4MHz at measuring temperature between 20 and $100^{/circ}C$. The anomalous increasing in dielectric constant and dielectric loss at low frequencies and high temperature was described for PVDF thin film containing ion impurities. In particularly, ion mobility of fabricated PVDF thin film at substrate temperature at $30^{/circ}C$ decrease from $2\times10^{-5}\;to\;3.07$\times10^{-7}cm^2/V.s$ On the other hand, ion density increase abruptly from 1.49\times$$10^{13}$ to $1.5\times$10^{16}$cm^{-3}$ In spite of decreasing of ion mobility, dielectric constants and dielectric loss for PVDF thin film increase rapidly with decreasing frequency and high temperature. It was concluded that the dielectric constants and dielectric loss was related to ion density than to ion mobility at low frequency and high temperatures.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.52-62
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• 2004

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for high-K dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs. The degradation in high-K dielectric MOSFETs is also identified as due to the additional coupling between the drain-to-source that occurs through the gate insulator, when the gate dielectric constant is significantly higher than the silicon dielectric constant. The technology parameters required to minimize the coupling through the high-K dielectric are identified. It is also shown that gate dielectric stack with a low-K material as bottom layer (very thin $SiO_2$ or oxy-nitride) will be helpful in minimizing FEBL. The circuit performance issues with high-K MOS transistors are also analyzed in this paper. An optimum range of values for the dielectric constant has been identified from the delay and the energy dissipation point of view. The dependence of the optimum K for different technology generations has been discussed. Circuit models for the parasitic capacitances in high-K transistors, by incorporating the fringing effects, have been presented.

• Journal of Microbiology and Biotechnology
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• v.8 no.6
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• pp.656-662
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• 1998

To make a distinction between the influence of the dielectric constant and of methanol concentration on trypsin-catalyzed hydrolysis and methanolysis at $0^{\circ}C$, a model reaction of $N^u$-benzyloxycarbonyl-L-lysine p-nitrophenyl ester with water-methanol mixtures was chosen and a kinetic study done. The $k_{cat}$ values increased with methanol concentration, in a linear manner whereas $K_{M}$ values increased in a log-linear fashion. However, the $k_{cat},$_{M}$ ratio increased at lower methanol concentrations than 30% and then began to decrease at higher concentrations. The decrease in $k_{catK_M}$observed at higher than 30% methanol concentrations is attributed to the hydrophobic partitioning effect on substrate binding. On the other hand, the increase in $k_{catK_M}$ in the 0~30% methanol concentration range seems to be due to the effect of nucleophilic cosolvent on $k_{cat}$ and of the dielectric constant on $k_m$. This explanation was verified by measuring the effect of varying the dielectric constant of the medium on kinetic constants with isopropyl alcohol chemically unrelated to the enzyme reaction as the methanol concentration is maintained at a constant level. Therefore, we conclude that the effect of increasing the methanol concentration in the model reaction on the kinetic parameters $k_{cat \;and\;{K_M}}$ is caused by changes in both the nucleophilicity and the dielectric constant of the medium. Based on product analysis, the increase in $k_4, k_3$by decreasing the temperature can be accounted for by the suppression of hydrolytic reactions. This observation indicates that the nucleophile is favored by low temperatures. There was no loss of trypsin activity over a 10 h period in 60% methanol concentration at $pH^＊\; 5.5,\; 0^{\circ}C$.EX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.917-921
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• 2002

In this paper, we made different types of non-thermal plasma reactors such as Metal-particle reactor with $Al_2O_3$ to measure NOx removal characteristic and the dielectric effect for NOx removal. NOx removal rate is not so good when we use just dielectric of $Al_2O_3$ at the Metal-particle reactor, also we just put sludge pellets(100%) without Metal-particle reactor with $Al_2O_3$ and dielectric such as $TiO_2$, $BaTiO_3$ to measure the effect of sludge for NOx removal so that NOx removal rate is almost the same. However NOx removal rate is more than 90% in case of the reactor of composition shape used both dielectric of $Al_2O_3$ and sludge pellets at the same time. In case of the shape of plasma reactor with dielectric, the Metal-particle reactor with $Al_2O_3$, and the metal-particle reactor with both $Al_2O_3$ and dielectric such as $TiO_2$, $BaTiO_3$ at the same time, they are almost the same effect for NOx removal, so we made MNPR(Metal-particle Non-thermal Plasma Reactor with $Al_2O_3$) to reduce these kinds of demerits. Finally, we think MNPR should be much better than other reactors for NOx removal.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.543-548
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• 2014

In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitors using $Al_2O_3-HfO_2-Al_2O_3$ and $SiO_2-HfO_2-SiO_2$ sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.518-519
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• 2005

We have studied the transmittance of fringe-filed switching(FFS) using a liquid crystal with positive dielectric anisotropy. Generally, FFS having positive dielectric anisotropy has less transmittance than FFS using negative dielectric anisotropy. FFS mode transmittance depends on horizontal director deformation, however fringe filed is composed of vertical and horizontal field. Vertical field in the middle of electrode suppresses the transmittance of FFS mode, especially when we use positive one. So, it is important to prevent the LC director from the effect of vertical field. We changed the splay elastic constant and checked the transmittance. The transmittance of FFS having positive dielectric anisotropy was improved. Less tilted LC directors improve the transmittance of FFS using positive dielectric anisotropy. We can improve the transmittance by using LC which have high splay elastic constant when another LC properties are equal.

• Bulletin of the Korean Chemical Society
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• v.34 no.9
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• pp.2563-2564
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• 2013

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1738-1745
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• 2015

Radiation characteristics of a probe-fed rectangular microstrip patch antenna printed on a finite grounded high permittivity substrate are investigated systematically for various square grounded dielectric substrate sizes with several thicknesses and dielectric constants by experiment and full wave simulation. The effect of the substrate size on the radiation characteristics of a rectangular patch antenna is mainly determined by the effective dielectric constant of surface waves on a grounded dielectric substrate. As the effective dielectric constant of surface waves increases, the substrate sizes for the maximum broadside gain and the required onset for a large magnitude of squint angle decrease, while the variations of the broadside gain, the front-to-back ratio, and the magnitude of squint angle versus the substrate size increase due to the increase of the power of the surface wave.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.813-816
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• 2001

In this paper, the dielectric properties of epoxy composites used for transformers are studied. The dielectric permittivity and loss of specimen are measured at the frequency range of 30[Hz]∼1[MHz] about temperature 20[$^{\circ}C$],100[$^{\circ}C$] and 140[$^{\circ}C$] respectively from a series of experiments. When the filler is added, between epoxy and silica is formed interface. Therefore, observed higher values of dielectric permittivity and loss in filled epoxy are attributed to MWS polarization effect. Also, glass transition temperature was shifted to higher temperature and value of dielectric permittivity and loss were decreased due to 2nd curing. Deformation of interfacial state is improved and value of dielectric permittivity and loss were decreased at low frequency region by the surface treatment of fillers with silane coupling agents.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.21-25
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• 1989

Theory and experimental results are presented to show the possibility of using a dielectric rod resonator method for characterizing dielectric materials at microwave frequency. The measuring structure is a resonator made up of a cylindrical dielectric rod placed between two parallel conducting plates. In this system, the TE$\_$011/ mode frequency was adapted to minimize the effect of the air-gap between the rod and the conducting plates. The dielectric properties are computed from the resonance frequencies, structure dimensions and 3-dB bandwidth.