• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.627-631
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• 2011

[ $[Li_{0.04}(Na_{0.54}K_{0.46})_{0.96}](Nb_{1-0.04-X}TaxSb_{0.04})O_3$ ]lead-free piezoelectric ceramics have been prepared by normal sintering at $1,100^{\circ}C$ for 5 h. X-ray diffraction analysis indicated that specimens demonstrate orthorhombic symmetry when $Ta\leq5$ mol%. While transforming into tetragonal symmetry when $x\geq20$ mol%. These suggest that the orthorhombic and tetragonal phases co-exist in the ceramics with 5 mol% $cm^3$. As the result of SEM images, the grain growth was decreased with the increase of Ta substitution. The ceramics become 'softening', leading to improvements in $k_p$, $\varepsilon_r$ and $d_{33}$, but a decrease in $Q_m$. Excellent properties of $k_p$= 0.46, $d_{33}$= 293 pC/N, ${\varepsilon}_r$= 1,583 and Tc= $340^{\circ}C$ were obtained when Ta= 15 mol%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.445-449
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• 2020

Non-volatile memory is approaching its fundamental limits with the Si₃N₄ storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.271-274
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.679-683
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• 2004

[ $BaO-Sm_2O_3-4TiO_2$ ] 세라믹을 LTCC용 재료로 사용하기 위해 $B_2O_3$와 CuO를 소결조제로 첨가하여 소결온도를 낮추었다. 10.0 mol%의 $B_2O_3$만을 첨가하였을 경우 $1000^{\circ}C$에서 2시간 소결시 er=72.23, Qf=4,050GHz, ${\tau}f=-0.574ppm/^{\circ}C$의 우수한 유전 특성값을 얻을 수 있었지만, $960^{\circ}C$이하에서는 소결이 잘 이루어지지 않았다. $B_2O_3$와 CuO를 동시에 소결조제로 첨가하였을 경우에는 $900^{\circ}C$에서 2시간 소결시 10.0 mol% $B_2O_3$, 15.0 mol% CuO의 첨가조성에서 ${\varepsilon}r$=70.09, Qf=4,728GHz의 우수한 유전특성을 보여 고유전율을 가진 저온 동시 소결용 재료로서의 가능성을 보여주었다. 이처럼 BaO-$Sm_2O_3-4TiO_2$ 세라믹의 소결온도를 낮출 수 있었던 요인은 소결온도보다 용융점이 낮은 2차상들이 액상을 형성하여 액상소결이 진행되었기 때문이며 이때 소결에 기여한 이차상들은 결정화되지 못하고 비정질 상태로 남아있는 것으로 추정된다.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.117-123
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• 2018

Recently, aqueous method has attracted lots of attention because it enables the solution-processed metal oxide thin film with high electrical properties in low temperature fabrication condition to various flexible devices. Focusing the development of aqueous route, many researchers are only focused on metal oxide materials. However, for expansive application of the aqueous-based metal oxide films, the systematic study of performance change with process variables for the development of aqueous-based metal oxide insulator film is urgently required. Here, we propose importance of process variables to achieve high electrical-performance metal oxide insulator based on the aqueous method. We found that the significant process variables including precursor solution temperature and humidity during the spincoating process strongly affect chemical, physical, and electrical properties of $AlO_x$ insulators. Through the optimization of significant variables in process, an $AlO_x$ insulator with a leakage current value approximately $10^5$ times smaller and a breakdown voltage value approximately 2-3 times greater than un-optimized $AlO_x$ was realized. Finally, by introducing the optimized $AlO_x$ insulators to solutionprocessed $InO_x$ TFTs, we successfully achieved $InO_x/AlO_x$ TFTs with remarkably high average field-effect mobility of ${\sim}52cm^2V^{-1}\;s^{-1}$ and on/off current ratio of 106 at fabrication temperature of $250^{\circ}C$.

• Korean Journal of Optics and Photonics
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• v.26 no.2
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• pp.103-109
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• 2015

In an amplitude-splitting interferometer, a beam splitter divides an input beam into two parts, which are superposed after propagating along separate paths, producing an interference effect. We have investigated the phase relation between the reflected and transmitted light waves at BS's made of lossless dielectric stacks. If we define the phases with proper reference planes, a definite phase relation exists, irrespective of the detailed structure of the layers in the BS. Although this results from the generalized Stokes relations, we have verified it numerically for two representative BS's with symmetric and asymmetric layer structures respectively. When we applied the phase relation to interferometers, we could determine the superposition state of the output beam (either constructive or destructive interference) for a general BS, and could verify that the light's energy was conserved.

• International Journal of Industrial Entomology and Biomaterials
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• v.38 no.2
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• pp.25-30
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• 2019

Atmospheric-pressure plasma technique is a technology for sterilizing agricultural product. In this study, dielectric barrier discharge plasma was applied to silkworm powder for 1 to 5 h with less than 2 ppm of $O_3$ and $NO_2$. Quantitative compositions including proximate contents, mineral and heavy metal contents, fatty acids, vitamins, and DNJ contents were measured. Proximate contents of silkworm powder were protein (57.2%), fat (9.9%), fiber (4.6%), ash (10.1%), and moisture (5.7%). These compositions were not affected by the treatment of plasma. Silkworm powder has 5 abundant minerals potassium (K), phosphorus (P), sulfur (S), calcium (Ca), and magnesium (Mg). Among these minerals, plasma treatment decreased the contents of P and S sharply from 732.3 to 176.8, and 492.7 to 185.2 mg/100g, respectively. Heavy metal contents including lead (Pb), cadmium (Cd), arsenic (As), and mercury (Hg) were not detected in the silkworm powder. Five vitamins such as ascorbic acid (13.6 mg/100g), riboflavin (5.4 mg/100g), ${\beta}$-carotene (1.8 mg/100g), niacin (0.6 mg/100g), and thiamine (0.4 mg/100g) were not significantly changed by plasma treatment. Silkworm powder is composed of 30 parts saturated fatty acids and 70 parts unsaturated ones. The fatty acid composition was not significantly changed by plasma treatment. The DNJ content of silkworm powder (3.72 mg/g) was also nearly constant within the experimental condition of plasma treatment.

• Korean Journal of Materials Research
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• v.28 no.12
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• pp.719-724
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• 2018

Cordierite composed of an alumina-silica-magnesia compound has a low coefficient of thermal expansion(CTE) and excellent thermal shock resistance. It also has a low dielectric constant and high electrical insulation. However, due to low mechanical strength, it is limited for use in a ceramic heater. In this study, $ZrO_2$ is added to an 80 wt% cordierite-20 wt% mullite composition, and the effect of $ZrO_2$ addition on the mechanical strength and thermal shock resistance is investigated. With an increasing addition of $ZrO_2$, cordierite-mullite formed $ZrO_2$, $ZrSiO_4$ and spinel phases. With sintering conducted at $1400^{\circ}C$ with the addition of 5 wt% $ZrO_2$ to 80 wt% cordierite-20 wt% mullite, the most dense microstructure forms along with an excellent mechanical strength with a 3-point flexural strength of 238MPa. When this composition is quenched in water at ${\Delta}T=400^{\circ}C$, the 3-point flexural strength is maintained. Moreover, when this composition is cooled from $800^{\circ}C$ to air, the 3-point flexural strength is maintained even after 100 cycles. In addition, the CTE is measured as $3.00{\times}10^{-6}{\cdot}K^{-1}$ at $1000^{\circ}C$. Therefore, 80 wt% cordierite-20 wt% mullite with 5 wt% $ZrO_2$ is considered to be appropriate as material for a ceramic heater.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.5
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• pp.877-886
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• 2019

The energy band gaps and optical constants of zincblende $In_yGa_{1-y}As_{1-x}N_x$ on the variation of temperature and composition are determined by using band anticrossing method. The energy band gaps are decreasing continuously in $In_yGa_{1-y}As_{1-x}N_x$ ($0{\leq}x{\leq}0.05$, $0{\leq}y{\leq}1.0$, 300K) and the bowing parameter is calculated as 0.522eV. The calculation results of energy band gaps are consistent with those of other studies. A refractive index n and a high-frequency dielectric constant ${\varepsilon}$ are calculated by a proposed modeling equation using the results of energy band gaps.