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Korea Institute of Electronic Communication Science (한국전자통신학회)
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The Calculation of the Energy Band Gaps and Optical Constants of Zincblende InyGa1-yAs1-xNx on Composition

조성비 변화에 따른 질화물계 화합물 반도체 InyGa1-yAs1-xNx의 에너지 밴드갭과 광학상수 계산

  • Chung, Ho-Yong ;
  • Kim, Dae-Ik (School of Electrical, Electronic Communication, and Computer Engineering, Chonnam National University)
  • 정호용 (전남대학교 의공학과) ;
  • 김대익 (전남대학교 전기전자통신컴퓨터공학부)
  • Received : 2019.09.05
  • Accepted : 2019.10.15
  • Published : 2019.10.31
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Abstract

The energy band gaps and optical constants of zincblende $In_yGa_{1-y}As_{1-x}N_x$ on the variation of temperature and composition are determined by using band anticrossing method. The energy band gaps are decreasing continuously in $In_yGa_{1-y}As_{1-x}N_x$ ($0{\leq}x{\leq}0.05$, $0{\leq}y{\leq}1.0$, 300K) and the bowing parameter is calculated as 0.522eV. The calculation results of energy band gaps are consistent with those of other studies. A refractive index n and a high-frequency dielectric constant ${\varepsilon}$ are calculated by a proposed modeling equation using the results of energy band gaps.

본 연구에서는 band anticrossing 모델을 사용하여 온도와 조성비 변화에 따른 4원계 질화물계 화합물 반도체 $In_yGa_{1-y}As_{1-x}N_x$의 에너지 밴드갭과 광학상수를 계산하였다. 300K의 조성비 구간($0{\leq}x{\leq}0.05$, $0{\leq}y{\leq}1.0$)에서 에너지 밴드갭들이 연속적으로 감소하며, 계산된 휨 매개변수는 0.522eV가 사용되었다. 에너지 밴드갭 계산 결과는 다른 연구 결과와 대체로 잘 일치하였다. 또한 에너지 밴드갭 결과를 새롭게 제안한 모델식에 적용하여 굴절률 n과 고주파 유전상수 ${\varepsilon}$를 계산하였다.

Keywords

References

  1. Y. Kuo, B. Liou, M. Chen, S. Yen, and C. Lin, "Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics," Opt. Commun., vol. 231, issues 1-6, 2004, pp. 395-402. https://doi.org/10.1016/j.optcom.2003.12.028
  2. B. Yoon, J. Song, J. Park, and H. Kwon, "Development of 1.2kW LED Light with Water-Air Circulation," J. of the Korea Institute of Electronic Communication Sciences, vol. 10, no. 5, 2015, pp. 615-622. https://doi.org/10.13067/JKIECS.2015.10.5.615
  3. C. Tan, J. Zhang, X. Li, G. Liu, B. Tayo, and N. Tansu, "First-principle electronic properties of dilute-As GaNAs alloy for visible light emitters," J. Display Technol., vol. 9, no. 4, Apr. 2013, pp. 272-279. https://doi.org/10.1109/JDT.2013.2248342
  4. B. Liou and C. Liu, "Electronic and structural properties of zincblende $Al_x$ $In_{1-x}$ N," Optics Commun., vol. 274, no. 2, 2007, pp. 361-365. https://doi.org/10.1016/j.optcom.2007.02.040
  5. J. Ibanez1, R. Oliva1, M. De la Mare, M. Schmidbauer, S. Hernandez, P. Pellegrino, D. Scurr, R. Cusco, L. Artus, M. Shafi, R. Mari, M. Henini, Q. Zhuang, A. Godenir, and A. Krier, "Structural and optical properties of dilute InAsN grown by molecular beam epitaxy," J. of Appl. Phys., vol. 108, no. 10, 2010, pp. 103504-1-8. https://doi.org/10.1063/1.3509149
  6. S. Kuboya, M. Kuroda, R. Katayama, and K. Onabe, "Carrier-concentration dependent photo-luminescence of InAsN films grown by RF-MBE," J. of Cryst. Growth, vol. 323, issue 1, 2011, pp. 26-29. https://doi.org/10.1016/j.jcrysgro.2010.12.017
  7. M. Beaudoin, I. Chan, D. Beaton, M. Elouneg-Jamroz, T. Tiedje, M. Whitwick, E. Young, J. Young, and N. Zangenberg, "Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy," J. Crystal Growth, vol. 311, no. 7, 2009, pp. 1662-1665. https://doi.org/10.1016/j.jcrysgro.2008.11.068
  8. R. Senger and K. Bajaj, "Photoluminescence excitonic linewidth in GaAsN alloys," J. of Appl. Phys., vol. 94, no. 12, 2003, pp. 7505-7508. https://doi.org/10.1063/1.1628405
  9. R. Kudrawiec, G. Sek, J. Misiewicz, L. Li, and J. Harmand, "Experimental investigation of the CMN matrix element in the band anticrossing model for GaAsN and GaInAsN layers," Solid State Commun., vol. 353, issue 6, 2004, pp. 353-357.
  10. H. Benaissa, A. Zaoui, and M. Ferhat, "First principles calculations for dilute $InAs_{1-X}$ $N_X$ alloys," J. of Appl. Phys., vol. 102, no. 11, 2007, pp. 113712-1-5. https://doi.org/10.1063/1.2821144
  11. H. Baaziz, Z. Charifi, A. Reshak, B. Hamad, and Y. Al-Douri, "Structural and electronic properties of $GaN_X$ $As_{1-X}$ alloys," App. Phys. A, vol. 106, no. 3, 2012, pp 687-696. https://doi.org/10.1007/s00339-011-6666-8
  12. C. Zhao, N. Li, T. Wei, and C. Tang, "Temperature and Composition Dependence of $GaN_X$ $As_{1-X}$ ($0{\leq}x{\leq}0.05$) before and after Annealing," Chin. Phys. Lett., vol. 28, no. 12, 2011, pp. 127801-1-4. https://doi.org/10.1088/0256-307X/28/12/127801
  13. H. Chung, "Energy Band Gaps and Bowing Parameters of Zincblende $GaAs_{1-X}$ $N_X$ ," Sae Mulli, vol. 64, no. 9, 2014, pp. 868-876. https://doi.org/10.3938/NPSM.64.868
  14. H. Chung and D. Kim, "The Calculation of the Energy Band Gaps of Zincblende $InAs_{1-X}$ $N_X$ on Temperature and Composition ," J. of the Korea Institute of Electronic Communication Sciences, vol. 11, no. 12, 2016, pp. 1165-1174. https://doi.org/10.13067/JKIECS.2016.11.12.1165
  15. H. Chung and D. Kim, "The Calculation of the Energy Band Gaps and Optical constants of Zincblende $GaAs_{1-X}$ $N_X$ on Temperature and Composition," J. of the Korea Institute of Electronic Communication Sciences, vol. 13, no. 6, 2018, pp. 1213-1222. https://doi.org/10.13067/JKIECS.2018.13.6.1213
  16. H. Chung and M. An, "Energy band structures of graded gap superlattices and quaternary compound semiconductors," Sae Mulli, vol. 32, no. 5, 1992, pp. 693-702.
  17. W. Shan, W. Walukiewicz, J. Ager III, E. Haller, J. Geisz, D. Friedman, J. Olson, and S. Kurtz, "Band Anticrossing in GaInNAs Alloys," Phys. Rev. Lett., vol. 82, no. 6, 1999, pp. 1221-1224. https://doi.org/10.1103/PhysRevLett.82.1221
  18. H. Chung, "Energy Band Structure of $In_X$ $Ga_{1-X}$ As," Sae Mulli, vol. 30, no. 6, 1990, pp. 704-709.
  19. H. Chung and M. An, "Energy Gaps and Bowing Parameters of Zincblende $Ga_x$ $In_{1-x}N$, $Al_x$ $In_{1-x}$ N, $Al_x$ $Ga_{1-x}$ N and their alloys $Al_x$ $Ga_y$ $In_{1-x-y}N$," Sae Mulli, vol. 57, no. 3, 2008, pp. 205-214.
  20. I. Vurgaftman, J. Meyer, and L. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys," J. of Appl. Phys., vol. 89, no. 11, 2001, pp. 5815-5875. https://doi.org/10.1063/1.1368156
  21. R. Kudrawiec, "Alloying of $GaN_xAs_{1-x}$ with $InN_x\;As_{1-x}$ : A simple formula for the band gap parametrization of $Ga_{1-y}In_yN_xAs_{1-x}$ alloys," J. of Appl. Phys., vol. 101, issue 2, 2007, pp. 023522-1-6. https://doi.org/10.1063/1.2424528
  22. A. Gueddim, R. Zerdoum, and N .Bouarissa, "Alloy composition and optoelectronic properties of dilute $GaSb_{1-x}$ $N_x$ by pseudo-potential calculations," Physica B, vol. 389, no. 2, 2007, pp. 335-342. https://doi.org/10.1016/j.physb.2006.07.008
  23. N. Bouarissa, S. Siddiqui, M. Boucenna, and M. Khan, "Band structure and optical constants of $GaAs_{1-x}$ $N_x$ ," Optik, vol. 131, 2017, pp. 317-322. https://doi.org/10.1016/j.ijleo.2016.11.090