• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1388-1390
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• 1995

The characteristic of dielectric breakdown in solid insulating material dominates the reliability and safety of power equipment and affects directly to its life. In this point of view, the thickness and temperature dependence of dielectric breakdown strength and mechanism of dielectric breakdown in low density polyethylene which has been employed widely as insulating material have been technically reviewed by examinations of thermal property. The dielectric breakdown strength depending on its thickness was measured 2.6[MV/cm] at the thickness of 20[${\mu}m$] and 1.9[MV/cm] at the thickness of 75[${\mu}m$] based on ambient temperature of 30[$^{\circ}C$]. It is shown the temperature dependence that dielectric breakdown strength decreases in linear as the thickness increases. The dielectric breakdown strength depending on temperature was measured 2.6[MV/cm] at the temperature of 30[$^{\circ}C$], 1.6[MV/cm] at 60[$^{\circ}C$] and 1.3[MV/cm] at 90[$^{\circ}C$] based on the thickness of 20[${\mu}m$]. As the ambient temperature increases, the temperature dependence is shown that a very large drop is occurred up to temperature of 60[$^{\circ}C$] and a very small drop is discovered over 60[$^{\circ}C$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.48-48
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• 2010

In this paper, we have investigated temperature dependence of dielectric breakdown voltage at epoxy with added nano-filler(MgO), which is used as a filler of epoxy additives for HVDC(high voltage direct current) submarine cable insulating material with high thermal conductivity and restraining tree to improve electrical properties of epoxy resin in high temperature region. In order to find dispersion of the specimen, the cross sectional area of nano-composite material is observed by using the SEM(Scanning Electron Microscope) and it is conformed that each specimen is evenly distributed without the cohesion. As a result, it is confirmed that the strength of breakdown of all specimen at 50 [$^{\circ}C$] decreased more than that of the dielectric breakdown strength at room temperature. When temperature increases from 50 [$^{\circ}C$] to 100 [$^{\circ}C$], we have confirmed that breakdown strength of virgin specimen decreases, but specimens with added MgO show constant dielectric breakdown strength.

• Electrical & Electronic Materials
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• v.5 no.4
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• pp.393-399
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• 1992

In order to increase the coupling strength between bisphenol-A type epoxy resin and filler SiO$_{2}$ it was treated to filler with silane coupling agent[KBM-603]. To observe how silane coupling agent effects on dielectric breakdown strength of Epoxy/SiO$_{2}$ compound material, specimens of eight type were made like following. (A-1, A-2), (B-1, B-2), (C-1, C-2), (D-1, D-2) (see 2-2. Specimen) Specimen treated with silane coupling agent had always bigger dielectric breakdown strength than non-treated specimen. Under the influence of silane coupling agent, increment ratio of dielectric breakdown strength at specimen manufactured by hand drill was very bigger than that of specimen inserted spherical electrode. Therefore, as the specimen shape was varied, it was studied on effect that silane coupling agent affects on dielectric breakdown strength of Epoxy/SiO$_{2}$ compound material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.78-81
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• 2004

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. Surface structure and adhesion of semiconductive silicon rubber by surface asperity was obtained from SEM and T-peel test. In addition, ac breakdown test was carried out for elucidating the change of electrical property by roughness treatment. From the results, Adhesive strength of semiconductive-insulation interface was increased with surface asperity. Dielectric breakdown strength by surface asperity decreased than initial Specimen, but increased from Sand Paper #1200. According to the adhesional strength data unevenness and void formed on the silicone rubber interface expand the surface area and result in improvement of adhesion. Before treatment Sand Paper #1200, dielectric breakdown strength was decreased by unevenness and void which are causing to have electric field mitigation small. After the treatment, the effect of adhesion increased dielectric breakdown strength. It is found that ac dielectric breakdown strength was increased with improving the adhesion between the semiconductive and insulating interface.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.527-533
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• 1994

In this study, it was studied on dielectric breakdown strength and thennostability properties due to the structure variation of matrix resin and treatment of coupling agent of epoxy insulating materials. The interpenetrating network structure was formed by simultaneous heating curing the epoxy resin with single network structure and the methacrylic acid resin. Also inner structure was observed and the glass transition temperature was measured on these three type specimens. Dielectric breakdown properties were investigated by applying DC, AC and impulse voltage. As a result, the glass transition temperature and the dielectric breakdown strength of specimen with interpenetrating network structure was more higher than another two type specimens.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.102-104
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• 1990

In this paper, we studied and investigated as to temperature dependence of dielectric breakdown properties, and the dielectric breakdown properties, and deterioration-proof properties due to interface treatment effect. In the result, we knew that temperature dependence of dielectric breakdown strength due to filler content was decreased, identified that D.C. dielectric breakdown strength was improved at the filler content 50[%]. When the D.C. voltage was applied to the non silane and silane treated specimens deal with mechanical deterioration, the dielectric breakdown strength was improved at the 150[%].

• Journal of the Korean institute of surface engineering
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• v.57 no.4
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• pp.254-264
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• 2024

This paper reviews the dielectric breakdown resistance and behavior of anodic oxide films in air environment. It begins with a description of the dielectric breakdown mechanisms of dielectric materials. The paper then introduces different types of dielectric materials and compares them in terms of dielectric strength, thermal conductivity, mechanical strength and cost. Next, the paper summarizes various fabrication methods for dielectric aluminum oxide layers, discussing the advantages and disadvantages of each method. Finally, it provides an overview of current studies on the dielectric breakdown properties of anodic aluminum oxide films formed on different aluminum alloys in various electrolytes.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2349-2351
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• 1999

In this paper, the variable absorption rates and DC dielectric breakdown strength of epoxy composites were measured at boiling absorption condition in order to observe the influences of moisture in out door use. Also, in order to improve withstand voltage properties at moisture absorbtion condition. IPN (interpenetrating polymer network) method which had been already reported, was introduced and the influence was investigated. As a result, it was confirmed that the moisture absorption rate was increased and DC dielectric breakdown strength was degraded with boiling time and filler content increasing. On the other hand, it was confirmed that moisture absorption rate and DC dielectric breakdown strength degrading rate were lowered by the improvement of adhesion strength In IPN specimens.

• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.261-265
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• 2010

In this paper, we attempt to improve the electrical characteristics of epoxy resin at high temperature (above $80^{\circ}C$) by adding magnesium oxide (MgO), which has high thermal conductivity. Scanning electron microscopy (SEM) of the dispersion of specimens with added MgO reveals that they are evenly dispersed without concentration. The dielectric breakdown characteristics of $SiO_2$ and MgO nanocomposites are tested by measurements at different temperatures to investigate the filler's effect on the dielectric breakdown characteristics. The dielectric breakdown strength of specimens with added $SiO_2$ decreases slowly below $80^{\circ}C$ (low temperature) but decreases rapidly above $80^{\circ}C$ (high temperature). However, the gradient of the dielectric breakdown strength of specimens with added MgO is slow at both low and high temperatures. The dielectric breakdown strength of specimens with 0.4 wt% $SiO_2$ is the best among the specimens with added $SiO_2$, and that of specimens with 3.0 wt% and 5.0 wt% MgO is the best among those with added MgO. Moreover, the dielectric strength of specimens with 3.0 wt% MgO at high temperatures is approximately 53.3% higher than that of specimens with added $SiO_2$ at $100^{\circ}C$, and that of specimens with 5.0 wt% of MgO is approximately 59.34% higher under the same conditions. The dielectric strength of MgO is believed to be superior to that of $SiO_2$ owing to enhanced thermal radiation because the thermal conductivity rate of MgO (approximately 42 $W/m{\cdot}K$) is approximately 32 times higher than that of $SiO_2$ (approximately 1.3 $W/m{\cdot}K$). We also confirmed that the allowable breakdown strength of specimens with added MgO at $100^{\circ}C$ is within the error range when the breakdown probability of all specimens is 40%. A breakdown probability of up to 40% represents a stable dielectric strength in machinery and apparatus design.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.92-95
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• 2001

The dielectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability. First of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical. The breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised and the electric field is concentrated. In the case of filled specimens with treating silane, the breakdown strength become much higher Finally, from the analysis of weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1[%], the applied field value needed to be under 21.5 [Mv/cm].