• Korean Journal of Materials Research
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• v.7 no.11
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• pp.929-933
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• 1997

에폭시 수지 DGEBA/MDA/GN계의 트링 열화에 미치는 전압과 온도의 영향에 대한 고찰을 통하여 고분자 절연재료의 절연파괴 거동을 연구하였다. 전압 인가시간에 따라 트리의 성장속도은 역S자의 형태로 나타났다. 인가전압과 온도가 증가함에 따라 트리의 성장속도는 증가하였으며 트리형상의 복잡함, 즉 국부적인 트링열화의 정도는 인가전압이 감소하거나 온도가 증가한 경우에 높게 나타났다. 절연파괴 강도는 유리 전이온도 이상에서 급격히 감소하였다.

• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.43-47
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• 2003

For an electrical insulation design of HTS cable, it is important to understand the dielectric characteristics of insulation materials in $LN_2$ and the insulation type. Generally, the electrical insulation of HTS Cable is classified into two types of the composite insulation and solid insulation type. In this research, we selected the insulation paper/$LN_2$ composite insulation type for the electric insulation of a HTS cable, and studied electric insulation characteristics of synthetic Laminated Polypropylene Paper (LPP) in liquid nitrogen ($LN_2$) for the application to high temperature superconducting (HTS) cable. Furthermore, we compared the breakdown characteristics of the butt gap and bended mini-model cable. It is necessary to understand the winding parameter of insulation paper/$LN_2$ composite insulation.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1546-1547
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• 2011

본 논문은 절연성 악화의 원인이 되는 연면방전에 착안하여 고체절연물의 종류, 크기에 따른 연면방전특성을 친환경 가스중에서 연구하였다. 위의 조건들은 모두 연면절연파괴전압 변화에 영향을 주었으며, 그 중 고체절연물의 크기가 연면절연파괴전압 차이에 가장 큰 영향을 주었다. 그리고 고체절연물 크기의 변화로 연면방전을 촉진 시키는 약점이 존재 하였고, 그 약점에 대한 대책이 강구되어야 한다. 이러한 연구의 결과는 차후, 친환경 절연재를 활용한 절연설계에 유용한 자료가 될 것이다.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.340-345
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• 1999

In this paper, polyimide thin films are fabricated by vapor deposition polymerization method appling to the interlayer insulator of semiconductor device, and are investigated in detail. It is found that the packing density and uniformity of films deposited by thermal evaporation are increased according to curing temperature. The resistivity, breakdown strength, relative permitivity, and dielectric loss are $3.2\tomes10^{15}\Omega$cm, 4.61 MV/cm, 2.9(10kHz) at $25^{\circ}C$, respectively. This thin films can be endured at $230^{\circ}C$ for 20,000 hours. Finally, we conclude that the thin films having the characteristics similar to those of $SiO_2$ can be used as an insulation films between layers of semiconductor device.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.4
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• pp.751-755
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• 2007

We have studied the variable conditions of reactive sputtering to prepare AM thin film. The leakage current showed below $10^{-9}A/cm^2$ at the deposition temperature of $250^{\circ}C\;and\;300^{\circ}C$ in the field of 0.1 MV/cm, and it was gradually increased and to be saturated in 0.2 MV/cm. The C-V characteristics of the above mentioned deposition temperature conditions showed a deep depletion phenomenon at inversion region. The C-V characteristics showed similarly under the DC power conditions of 100 and 150 W but were degraded at 200W. When the DC power was 100, 200, and 300 W the dielectric breakdown phenomenon was shown in 2.8, 3.2 and 5.2 MV/cm, respectively. It was found that AIN film was dominated by Poole-Frenkel conduction mechanism.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.483-489
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• 1996

Power transformer have many unsymmetrical structure and electric field is enhanced in that area. Those unsymmetrical area are not covered oftenly by solid insulating material which is used as a framework specially in gas transformer. By that result there is a possibility to decrease the total insulation class of the transformer. So in this study the electrical characteristic of $FC+SF_6$ mixture gas which is used as coolants for large power gas insulated transformer and its effects on electrical characteristics of structural material are investigated. Also breakdown characteristic with the tension of taping and curvature of the coil are studied which could be used as a design factor of large power transformer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.305-308
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• 1997

Characteristics of tree propagation and fractal dimension in DGEBA/MDA/GN system were investigated. In the GN contents of 0 and 5 phr, tree was not produced. In the GN content of 10 phr, a reversed sigmoidal behaviour was found but in those of 15 and 20 phr, linear behaviors were found. All electrical trees possessed fractal characteristics. Fractal dimensions of epoxy resin system were almost constant with the variation of observation angles. Since dielectric breakdown occurred earlier in the GN content of 20 phr, fractal characteristics of modified epoxy resin system in a particular term couldnt be investigated.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.5
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• pp.709-715
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• 1990

SiO2 films were nitrided by tungsten-halogen heated rapid thermal annealing in ammonia gas at temperatures of 900-1100\ulcorner for 15-180sec. The nitroxide films were analyzed using Auger electron spectroscopy. MIS caapcitors were fabricated using these films as gate insulators. I-V and C-V characteristics of MIS capacitors were investigated. The AES depth profiles of nitroxide film show that the nitrogen rich layer is, at the early stage of nitridation, formed at the surface of nitroxide film and near the interface between nitroxide and silicon. Nitridation of SiO2 makes the film have a larger effective average refractive index. The thermal nitridation of SiO2 on silicon causes the flatband voltage shift due to the change of the fixed charge density. It is found that the dominant conduction mechanism in nitroxide is Fowler-Nordheim tunneling. Rapid thermal nitridation of 200\ulcornerSiO2 on silicon results in an improvement in the dielectric breakdown electric field.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.10
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• pp.35-41
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• 1992

Ultra-thin silicon nitride films were fabricated with ECR(Electron cyclotron Resonance) nitrogen plasma at room temperature. Film thickness was about 50$\AA$ after nitridation for 1min at microwave power of 1000W, RF power of 500W, and NS12T pressure of ${\times}10^{-3}$ torr. 50$\AA$ fo nitride film was grown within 1 min and no appreciable growth occured thereafter. Dielectric breakdown strength and leakage current density in Al/SiN/Si structure were measured to be about 7-11 MV/cm and ${\times}10^{-10}~5{\times}10^{-10}A/cm^{2}$, respectively. Observed linear relationship in 1n(J/E)-vs-E$^{1/2}$ and no polarity-dependence of the leakage current indicated that the Poole-Frenkel emission is mainly responsible for the conduction in this nitrided silicon films.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.41-47
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• 1992

In SFB Process, after 110$0^{\circ}C$ annealing in wet OS12T(95$^{\circ}C$ HS12TO bubbling) atmosphere, the existence of the interfacial oxide film in micro-gap at Si-Si bonding interface was identified. The angle lapping/staining and SEM morphologies of bonding interface showed that the growing behavior of interfacial oxide made a contribution to eliminate the micro-gaps having a width of 200-300$\AA$. In case of the diodes composed of p-n wafer pairs made by SFB processes, the annealed one in wet OS12T atmosphere exhibited a dielectric breakdown phenomena of interfacial oxide at 37-40 volts d.c.