The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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Electrical Conduction Mechanism of AIN Insulator thin Film Fabricated by Reactive Sputtering Method for the Application of MIS Device

반응성 스퍼터링으로 제조한 MIS 소자용 AIN 절연박막의 전기전도 메커니즘

  • 박정철 (경원대 전자.정보통신공학부) ;
  • 권정열 (명지대 공대 전기공학과) ;
  • 이헌용 (명지대 공대 전기공학과) ;
  • 추순남 (경원대 공대 전기.소방학부)
  • Published : 2007.04.01
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Abstract

We have studied the variable conditions of reactive sputtering to prepare AM thin film. The leakage current showed below $10^{-9}A/cm^2$ at the deposition temperature of $250^{\circ}C\;and\;300^{\circ}C$ in the field of 0.1 MV/cm, and it was gradually increased and to be saturated in 0.2 MV/cm. The C-V characteristics of the above mentioned deposition temperature conditions showed a deep depletion phenomenon at inversion region. The C-V characteristics showed similarly under the DC power conditions of 100 and 150 W but were degraded at 200W. When the DC power was 100, 200, and 300 W the dielectric breakdown phenomenon was shown in 2.8, 3.2 and 5.2 MV/cm, respectively. It was found that AIN film was dominated by Poole-Frenkel conduction mechanism.

Keywords

References

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