• 한국정밀공학회지
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• 제13권5호
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• pp.122-130
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• 1996

In this study, machinability of some aluminum-magnesium alloy are experimentally investigated using polycrystalline diamond tool with turning, and evaluated some independent cutting variables affected micrometal cutting characteristics as cutting force, specific cutting resistance, shear angles. To know the effect of cutting parameters of single point diamond machining, experiments were performed to measure cutting forces for high speed turning of aluminum alloy 6061-T6, SM45C and FC20 with poly- crystalline diamond and coated cemented carbide tool. Independent cutting variables were changed to a variety of cutting speed, feed rate, rake angles, material properties of workpiece and tool. Futhermore. Some useful informations are obtained in this study can guide micro metal cutting of aluminum alloy with diamond tool.

• 한국분말재료학회지
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• 제22권2호
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• pp.111-115
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• 2015

This study investigates the microstructure and thermal shock properties of polycrystalline diamond compact (PDC) produced by the high-temperature, high-pressure (HPHT) process. The diamond used for the investigation features a $12{\sim}22{\mu}m$- and $8{\sim}16{\mu}m$-sized main particles, and $1{\sim}2{\mu}m$-sized filler particles. The filler particle ratio is adjusted up to 5~31% to produce a mixed particle, and then the tap density is measured. The measurement finds that as the filler particle ratio increases, the tap density value continuously increases, but at 23% or greater, it reduces by a small margin. The mixed particle described above undergoes an HPHT sintering process. Observation of PDC microstructures reveals that the filler particle ratio with high tap density value increases direct bonding among diamond particles, Co distribution becomes even, and the Co and W fraction also decreases. The produced PDC undergoes thermal shock tests with two temperature conditions of 820 and 830, and the results reveals that PDC with smaller filler particle ratio and low tap density value easily produces cracks, while PDC with high tap density value that contributes in increased direct bonding along with the higher diamond content results in improved thermal shock properties.

• 열처리공학회지
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• 제33권1호
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• pp.20-24
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• 2020

Single crystal diamonds are in great demand in such fields as mechanical, electronic applications and optoelectronics. Large area single crystal diamonds are attracting attention in future industries for mass production and low cost. In this study, hot filament CVD (HFCVD) is used to grow large area single crystal diamond. However, the growth rate of large area single crystal diamond using HFCVD is known to be very low. The goal of this study is to use single crystal diamond substrates in HFCVD with methane-hydrogen gas mixtures to increase the growth rate of single crystal diamond and to optimize the conditions by analysing the effects of deposition conditions for high quality crystallinity. The deposition pressure, the ratio of CH₄/H₂ gas, the substrate temperature and the distance between the filament and the substrate were optimized. The sample used a 4×4 (mm²) size single crystal diamond substrate (100), the CH₄/H₂ gas ratio was fixed at 5%, the substrate temperature was synthesized to about 1000℃. At this time, the deposition pressure was changed to three types of 50, 75, 85 Torr and deposited. Finally, optimization was investigated under pressure conditions to analyse the growth rate and quality of single crystal diamond.

• 한국결정성장학회지
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• 제10권2호
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• pp.100-104
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• 2000

다이아몬드 박막을 마이크로웨이브 플라즈마 방법을 이용하여 실리콘 기판위에 증착하였다. 증착된 다이아몬드 박막과 실리콘 기판의 단면을 이온 밀링 방법으로 식각한후, 경계면을 투과 전자 현미경으로 분석하였다. 다이아몬드 박막은 실리콘 기판위에 직접 성장되거나 또는 중간층이 형성된후 성장됨을 알 수 있었다. 중간층의 구성은 주로 Sic 또는 무정형 탄소로 이루어졌으며 중간층의 두께는 경계면을 따라 다르게 변하였다. 전자 회절 패턴으로부터, 경계면 주위에 잘 발달된 실리콘 기판과 다이아몬드의 결정면들이 서로 적합하게 성장되었고 있음을 알 수 있었다. 이 결과들로부터 실리콘 기판위에 성장되는 다이아몬드 박막의 초기 성장 형태를 추론할 수 있었다.

• 한국분말재료학회지
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• 제22권3호
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• pp.203-207
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• 2015

This study investigated the microstructure and wear resistance property of HPHT(high pressure high temperature) sintered PDC(polycrystalline diamond compact) in accordance with initial molding pressure. After quantifying an identical amount of diamond powder, the powder was inserted in top of WC-Co sintered material, and molded under four different pressure conditions (50, 100, 150, $200kgf/cm^2$). The obtained diamond compact underwent sintering in high pressure, high temperature conditions. In the case of the $50kgf/cm^2$ initial molding pressure condition, cracks were formed on the surface of PDC. On the other hand, PDCs obtained from $100{\sim}200kgf/cm^2$ initial molding pressure conditions showed a meticulous structure. As molding pressure increased, low Co composition within PDC was detected. A wear resistance test was performed on the PDC, and the $200kgf/cm^2$ condition PDC showed the highest wear resistance property.

• International Journal of Internet, Broadcasting and Communication
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• 제12권2호
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• pp.30-36
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• 2020

We demonstrated a successful fabrication of 4" Gallium Nitride (GaN)/Diamond High Electron Mobility Transistors (HEMTs) incorporated with Inner Slot Via Hole process. We made in manufacturing technology of 4" GaN/Diamond HEMT wafers in a compound semiconductor foundry since reported [1]. Wafer thickness uniformity and wafer flatness of starting GaN/Diamond wafers have improved greatly, which contributed to improved processing yield. By optimizing Laser drilling techniques, we successfully demonstrated a through-substrate-via process, which is last hurdle in GaN/Diamond manufacturing technology. To fully exploit Diamond's superior thermal property for GaN HEMT devices, we include Aluminum Nitride (AlN) barrier in epitaxial layer structure, in addition to conventional Aluminum Gallium Nitride (AlGaN) barrier layer. The current collapse revealed very stable up to Vds = 90 V. The trapping behaviors were measured Emission Microscope (EMMI). The traps are located in interface between Silicon Nitride (SiN) passivation layer and GaN cap layer.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.15-19
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• 1998

Defects formation of Chemical Vapor Deposition (CVD) diamond on $^4He^{2+}$ irradiation and after remote hydrogen plasma treatment(RHPT) were investigated by cathodoluminescence(CL). As calculated in the TRIM simulation, the light elements of $^4He^{2-}$ can be penetrated into the diamond bulk structure at 3~4 $\mu\textrm{m}$ depth. The effects of the implantation region were observed when 5 keV~20 keV electron energy (insight 0.3~4.0$\mu\textrm{m}$) of CL measurement was irradiated to diamond at temperature 80 K. After the RHPT, rehybridization of irradiation damaged diamond was studied. The intensity of 5RL center(intrinsic defect of C) was diminished. The 2.16 eV center (N-V center) occurring usually by annealing could not be seen after RHPT. The diamond was rehybridized by hydrogen radicals without etching and thermal degradation by the RHPT.

• 한국정밀공학회지
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• 제16권4호통권97호
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• pp.148-154
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• 1999

This study was carried out to verify grinding performance of dental diamond bur and investigate the possibility of AE application in dentistry field. Workpieces were made of acryl and bovine respectively for the experiments in this study. Grinding test was conducted to get the data of grinding resistance and specific grinding energy of four different types of diamond bur by using tool dynamometer. AE signal was acquired to verify grinding process in the AE measuring system. Tool wear was observed to find parameters about grinding characteristics of diamond bur by means of SEM picture. It was found that the wear of dental diamond bur could be detected with polishing of grinding material, removal of adhesive parts, wear of particles neighboring cutting nose, loss of material and elevation of temperature. The wear of B, C, D type diamond bur is due to wear and fracture of grain size. Abnormal state can be found through the behavior of AE signal in the grinding working. As a result, it is expected that forecast of abnormal state is possible using AE equipments under real time process.

• 한국진공학회지
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• 제7권s1호
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• pp.160-166
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• 1998

The field emission characteristics of defective diamond films grown by microwave plasma enhanced chemical vapor deposition (MPECVD) have been studied. X-ray diffraction, the poor crystal quality and/or small grain sizes of the diamond phase and the inclusion of the non-diamond carbon phases in these films have been condirmed by raman spectroscopy, scanning electron microscopy, atomic force microscopy, and the reflectance measurements. The degrees of the film defectiveness and the emission characteristics were dependent on the methane concentration. Current-versus-voltage measurements have demonstrated that the defective diamond films have good electron emission characteristics. characteristics strongly suggests the defect-related electron-emission mechanism. The defective diamond films deposited on Si substrates show the field emission current density of 1$\mu\textrm{A}/\textrm{cm}^2$ and 1mA/$\textrm{cm}^2$ have been measured at electric fields as low as 4.5V/$\mu\textrm{m}$ and 7.6V/$\mu\textrm{m}$, respectively. We also observed the similar emission characteristics from the defective diamond film deposited on Cr/Si substrate and could decrease the deposition temperature to $600^{\circ}C$.

• 한국표면공학회지
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• 제29권5호
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• pp.549-555
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• 1996

Diamond Like Carbon film is amorphous film which is considered to consist of three coordinate graphite structure and tetrahedron coordinate diamond structure. Its hardness, thermal conductivity and chemical stability are nearly to one of diamond. It is well known to become semi-conductor by doping of inpurity. In this study Diamond Like Carbon film was synthesized by Microwave Plasma CVD in the gas mixture of hydrogen-methan-nitrogen and doped of nitrogen on the single-crystal silicon or silica glass. The temperature of substrate and nitrogen concentration in the gas mixture had an effect on the bonding state, structural properties and conduction mechanism. The surface morphology was observed by Scanning Electron Microscope. The strucure was analyzed by laser Raman spectrometry. The bonding state was evaluated by electron spectroscopy. Diamond Like Carbon film synthesized was amorphous carbon containing the $sp^2$ and $sp^3$ carbon cluster. The number of $sp^2$ bonding increased as nitrogen concentration increased from 0 to 40 vol% in the feed gas at 1233K substrate temperature and at $7.4\times10^3$ Pa. Increase of nitrogen concentration made Diamond Like Carbon to be amorphous and the doze of nitragen could be controlled by nitrogen concentration of feed gas.