• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.2079-2088
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• 2014

In this paper, we propose new physically based threshold voltage models for short channel Surrounding Gate Silicon Nanowire Transistor with two different geometries. The model explores the impact of various device parameters like silicon film thickness, film height, film width, gate oxide thickness, and drain bias on the threshold voltage behavior of a cylindrical surrounding gate and rectangular surrounding gate nanowire MOSFET. Threshold voltage roll-off and DIBL characteristics of these devices are also studied. Proposed models are clearly validated by comparing the simulations with the TCAD simulation for a wide range of device geometries.

• 한국연소학회:학술대회논문집
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• 2005.10a
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• pp.281-286
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• 2005

To understand fundamental characteristics of combustion in a small scale device, the effects of the momentum and heat loss on the stability of laminar premixed flames in a narrow channel are investigated by two-dimensional high-fidelity numerical simulation. A general finding is that momentum loss promotes the Saffman-Taylor (S-T) instability which is additive to the Darrieus-Landau (D-L) instabilities, while the heat loss effects result in an enhancement of the diffusive-thermal (D-T) instability. These effects are also valid in nonlinear behavior of the premixed flame. The simulations of multiple cell interactions are also conducted with heat and momentum loss effects.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.100-106
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• 1999

A new IBC(Island Body Contact) structure is introduced to SOI CMOS VLSI for stabilizing the body potential of the MOSFET without the additional area consumption. The improvement of the body contact effect is achieved by reducing the body resistance and the area is saved as the bodies of the MOSFETs are connected together. Its property as VLSI device is confirmed through the device simulations and the measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.105-108
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• 2020

In this study, experiments and simulations were conducted for a 1,200-V-class trench Si insulated-gate bipolar transistor (IGBT) with a small cell pitch below 2.5 ㎛. Presently, as a power device, the 1,200-V-class trench Si IGBT is used for automotives including electric vehicles, hybrid electric vehicles, and industrial motors. We obtained a breakdown voltage of 1,440 V, threshold of 6 V, and state voltage drop of 1.75 V. This device is superior to conventional IGBTs featuring a planar gate. To derive its electrical characteristics, we extracted design and process parameters. The cell pitch was 0.95 ㎛ and total wafer thickness was 140 ㎛ with a resistivity of 60 Ω·cm. We will apply these results to achieve fine-pitch gate power devices suitable for electrical automotive industries.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.2
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• pp.74-80
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• 2014

Generator protection device has to detects an internal fault conditions in generator and abnormal operating conditions must be due to the hazards. Loss of excitation may cause generator itself failure as well as serious operating problem in power system, and then requires an appropriate response of generator protection device. Details modeling of generator control system and analysis of transient states in generator are important for optimal operation in power plants. In addition, the fault simulation data are also used for testing the characteristics of IED. In this paper, the hydro generator control system using PSCAD/EMTDC, visual simulation for power systems, was modeled. The generator control system which is composed of generator, turbine, exciter, governor was implemented. The parameters of generator control system model were obtained from field power plant. Loss of excitation simulations were performed while varying the fixed load. Several signals analysis were also performed so as to analyze transients phenomena.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.79-82
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• 2003

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with $SiO_2$ and $Al_2O_3$ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with $Al_2O_3$ insulator had good thermal conductivity and reliability.

• Journal of the Korean Society for Precision Engineering
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• v.13 no.1
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• pp.131-142
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• 1996

Most industrial robots cannot be off-line programmed to carry out a task accurately, unless their kinematic model is suitably corrected through a calibration procedure. However, normal calibration is an expensive and time-consumming precedure due to the highly accurate measurement equipment required and due to the significant amount of data that must be collected. This paper presents a simple and economic procedure to improve the efficiency of robot calibration especially for arc welding application. To simplify the measurement process, an automotic data measurement algorithm as well as a simple measurement device are developed. Also, a calibration algorithm which can automatically identify the independent model parameters to be estimated is presented. To demonstrated the simplicity and the effectiveness of the procedure, experimental studies and computer simulations are performed and their results are discussed.

• Journal of Power Electronics
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• v.11 no.6
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• pp.897-903
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• 2011

Many voltage sag compensators have been introduced, including the traditional dynamic voltage restorer (DVR), which requires an energy storage device but is inadequate for compensating deep and long-duration voltage sags. The AC-AC sag compensators introduced next do not require a storage device and they are capable of compensating voltage sags. This type of compensator needs an AC-AC converter to regulate the output voltage. Presented in this paper is a three-phase PWM-switched autotransformer voltage sag compensator based on an AC-AC converter that uses a proposed detection technique and PWM voltage control as a controller. Its effectiveness and capability in instantly detecting and compensating voltage sags were verified via MATLAB/Simulink simulations and further investigated through a laboratory prototype developed with a TMS320F2812 DSP as the main controller.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1803-1805
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• 2000

This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with 15% triangular Ge profile shows higher cut-off frequency and DC current gain than that with 19% trapezoidal Ge profile. The cut-off frequency and BC gain are increased from 42GHz to 84GHz and from 200 to 600, respectively.

• Journal of IKEEE
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• v.17 no.2
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• pp.129-134
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• 2013

For the conventional power metal-oxide semiconductor field-effect transistor (MOSFET) device structure, there exists a tradeoff relationship between specific on-resistance ($R_{ON.SP}$) and breakdown voltage ($V_{BR}$). In order to overcome the tradeoff relationship, a uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) structure is studied and designed. The structure modeling considering doping concentrations is performed, and the distributions at breakdown voltages and the electric fields in a SJ TMOSFET are analyzed. The simulations are successfully optimized by the using of the SILVACO TCAD 2D device simulator, Atlas. In this paper, the specific on-resistance of the SJ TMOSFET is successfully obtained 0.96 $m{\Omega}{\cdot}cm^2$, which is of lesser value than the required one of 1.2 $m{\Omega}{\cdot}cm^2$ at the class of 100 V and 100 A for BLDC motor.