• Journal of information and communication convergence engineering
• /
• 제3권3호
• /
• pp.131-136
• /
• 2005

The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency (RF) magnetron sputtering technique. It was found that the growth characteristics of the ZnO films have a strong dependence on the deposition temperature from 25 to $350^{\circ}C$. The ZnO films deposited below $200^{\circ}C$ exhibited reasonably good columnar grain structures with a highly preferred c-axis orientation while those above 200°C showed very poor columnar grain structures with a mixed-axis orientation. This study seems very useful for the future FBAR device applications.

• 한국시뮬레이션학회:학술대회논문집
• /
• 한국시뮬레이션학회 2001년도 The Seoul International Simulation Conference
• /
• pp.269-273
• /
• 2001

Semiconductor wafer fabrication is a business of high capital investment and fast changing nature. To be competitive, the production in a fab needs to be effectively planned and scheduled starting from the ramping up phase, so that the business goals such as on-time delivery, high output volume and effective use of capital intensive equipment can be achieved. In this paper, we propose Stand Alone layout and In-Line layout are analyzed and compared while varying number of device variable changes. The comparison is performed through simulation using ProSys; a window 98 based discrete system simulation software, as a tool for comparing performance of two proposed layouts. The comparison demonstrates that when the number of device variable change is small, In-Line layout is more efficient in terms of production quantity. However, as the number of device variable change is more than 14 titles, Stand Alone layout prevails over In-Line layout.

• 한국고분자학회:학술대회논문집
• /
• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
• /
• pp.231-231
• /
• 2006

We fabricated a polymer sub-microstructure for optical device application by two-photon-induced laser lithography technique. Polymer pattern could be minimized as small as ${\sim}100\;nm$. The photopolymerization resin contains laser-dye, thus promising a high level of the optical gain. We utilized the lithography technique to the photonic crystal application, where the template of the two-dimensional photonic crystal was modified by polymer gain medium as defect-shape and line-shape orientations. Photonic band gap effect from polymer-doped photonic crystals is expected to exploit the application such as organic solid-state laser device.

• 전자공학회논문지A
• /
• 제33A권7호
• /
• pp.127-133
• /
• 1996

In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photoresist reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate form both sides of the main gate. The poly-Si channel layer below the offset oxide is protected form the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of oru new device is the offset region due to the offset oxide. our experimental reuslts show that the offset region, due to the photoresist reflow process, has been sucessfully obtained in order to fabricate the offset gated poly-Si TFTs. The maximum ON/OFF ratio occurs at the L$_{off}$ of 1.1${\mu}$m and exceeds 1X10$^{6}$.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
• /
• pp.1619-1622
• /
• 2005

The ultra thin hole injection layer (HIL) was deposited on an indium-tin-oxide (ITO) anode by using an ion beam assisted d eposition (IBAD) for the fabrication of an polymeric electroluminescence device for the first time. The device with the HIL deposited by IBAD has higher external quantum efficiency than the device with the HIL by conventional thermal evaporation. It is found that the deposited HIL by IBAD has high surface coverage on ITO anode in a few nm regions because the HIL prepared has high adatom mobility by ion beam energy.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 2001년도 ICCAS
• /
• pp.111.2-111
• /
• 2001

The research focuses on controlling a gap to measure the surface defect in semi-conductor fabrication device. The measurement is available accompanying a near field image gap control. In this article, a pneumatic servo system is adopted for the near field gap control. The advantage of the pneumatic servo system is on the preventing the possibility of contacting the device to the wapper surface, fence arising fatal damage. Furthermore, the air from the pneumatic system blows the some particle on the wapper during controlling. The target gap is less than 20 $\mu$m and the gap should keep same amount while the device moves around the surface. The experiment by the pneumatic servo control system is done by employing a simple PID control, and the tracking performance is remarkably verified. The target gap is set from 10 $\mu$m to 100 $\mu$m ...

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2007년도 추계종합학술대회
• /
• pp.196-199
• /
• 2007

In this paper, we studied a ZnO-based film bulk acoustic wave resonator (FBAR) device fabricated on top of a novel multi-layered Bragg reflector with chromium adhesion layers $(0.03{\mu}m-thick)$ inserted. The performance of FBAR device could be significantly improved using proper thermal treatments. At ${\sim}2.75$ GHz, we could achieve good return loss and quality factor (Q). This device fabrication technique will be useful for the future mobile WiMAX applications.

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2007년도 추계종합학술대회
• /
• pp.204-207
• /
• 2007

Film bulk acoustic wave resonator (FBAR) technology has attracted a great attention as a promising technology to fabricate the next-generation RF filters mainly because the FBAR technology can be integrated with current Si processing. The RF filters are basically composed of several FBAR devices connected in parallel and in series, and their characteristics depend highly on the FBAR device characteristics. Thus, it is important to design high quality FBAR devices by device or process optimization. This kind of effort may enhance the FBAR device characteristics, eventually leading to FBAR filters of high performance. In this paper, we describe the methods to more effectively improve the resonance characteristics of the FBAR devices.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.16-17
• /
• 2005

Local lifetime control by ion implantation has become an useful tool for production of modern power devices. In this work, punch-through diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation was executed at the various energy and dose conditions. Characterization of the device was performed by I-V, C-V and Trr measurement. We obtained enhanced reverse recovery time characteristics which was about 45% of original device and about 73% of electron irradiated device. The measurement results showed that proton irradiation was able to effectively reduce minority carrier lifetime.

• 한국전기전자재료학회논문지
• /
• 제19권3호
• /
• pp.216-221
• /
• 2006

Lifetime control technique by proton implantation has become an useful tool for production of modern power devices. In this work, punch-through type diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation which was capable of controlling carrier's lifetime locally was carried out at the various energy and dose conditions. Characterization of the device was performed by current-voltage, capacitance-voltage and reverse recovery time measurement. We obtained enhanced reverse recovery time characteristics which was about $45\;\%$ of original device reverse recovery time and about $73\;\%$ of electron irradiated device reverse recovery time. The measurement results showed that proton irradiation technique was able to effectively reduce minority carrier lifetime without degrading the other characteristics.