• Proceedings of the KIEE Conference
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• 2006.04a
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• pp.108-110
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• 2006

A prediction model of charge concentration of silicon nitride (SiN) thin films was constructed by using neural network and genetic algorithm. SIN films were deposited by plasma enhanced chemical vapor deposition and the deposition process was characterized by means of $2^{6-1}$ fractional factorial experiment. Effect of five training factors on the model prediction performance was optimized by using genetic algorithm. This was examined as a function of the learring rate. The root mean squared error of optimized model was 0.975, which is much smaller than statistical regression model by about 45%. The constructed model can facilitate a Qualitative analysis of parameter effects on the charge concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.37-40
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• 2002

Superconductor wire fabricated by electrophoresis showed its critical current density depended on parameters such as applied voltage and deposition time. Substrate and suspension solutions. and its properties are also important parameters. When same optimal parameter and condition was used, deposition density of superconductor film affect directly its critical current density. In this study, therefore, electrophoretic deposition technique was utilized for a densification of YBCO superconducting wire, and researches on electrophoretic suspension solutions and additive were experimentally performed for an improvement of the critical current density of fabricated electrophoretically superconducting wire. The samples fabricated in the solution with the additive, 8 vol.% of 1% PEG(1000), showed the highest critical current density.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.7
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• pp.1049-1058
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• 1990

Mathematical modeling equations of a parallel plate type reactor were obtained in the PECVD process in preparing hydrogenated amorphous silicon. Velocity profiles, temperature profiles and concentration profiles in the reactor were calculated from the model. The theoretical approach was attempted to obtain the deposition rate and film uniformity at different operating conditions by calculating RF discharge parameters and establishing the reaction mechanisms of a-Si:H thin film. The modelling equations are solved by a finite difference method with control volume balance. The mean electrom energy in discharge was applied to model simulation parameter. The magnitudes of the predicted deposition rate are in good aggrement with those of experiment. The results of computer simulation shows that uniform deposition profiles can.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.329-333
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• 2011

To develop wide-band noise absorbers with a special design for low-frequency performance, this study proposes a tin oxide (Sn-O) thin films as the noise absorbing materials in a microstrip line. Sn-O thin films were deposited on polyimide film substrates by reactive sputtering of the Sn target under flowing $O_{2}$ gas, exhibiting a wide variation of surface resistance (in the range of $10^{0}-10^{5}{\Omega}$) depending on the oxygen partial pressure during deposition. The microstrip line with characteristic impedance of $50\Omega$ was used for the measurement of noise absorption by the Sn-O films. The reflection parameter $(S_{11})$ increased with a decrease of surface resistance due to an impedance mismatch at the boundary between the film and the microstrip line. Meanwhile, the transmission parameter $(S_{21})$ diminished with a decrease of surface resistance resulting from an Ohmic loss of the Sn-O films. The maximum noise absorption predicted at an optimum surface resistance of the Sn-O films was about $150{\Omega}$. For this film, greater power absorption is predicted in the lower frequency region (about 70% at 1 GHz) than in conventional magnetic sheets of high magnetic loss, indicating that Ohmic loss is the predominant loss parameter for the conduction noise absorption in the low frequency band.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.680-686
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• 2006

Tin oxide$(SnO_2)$ thin films were prepared on glass substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. $SnO_2$ thin films were prepared using gas mixture of dibutyltin diacetate as a precursor and oxygen as an oxidant at 275, 325, 375, $425^{\circ}C$, respectively as a function of deposition temperature. The XRD peaks corresponded to those of polycrystalline $SnO_2$, which is in the tetragonal system with a rutil-type structure. As the deposition temperature increased, the texture plane of $SnO_2$ changed from (200) plane to denser (211) and (110) planes. Lower deposition temperature and shorter deposition time led to decreasing surface roughness and electrical resistivity of the formed thin films at $325\sim425^{\circ}C$. The properties of $SnO_2$ films were critically affected by deposition temperature and time.

• Journal of Surface Science and Engineering
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• v.20 no.3
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• pp.106-117
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• 1987

The microhardness and the structural characteristics of the chemically vapor deposited TiN film on the 430 stainless steel substrate have been investigated with various deposition parameters such as the deposition time, the total flow rate, the flow rate ratio $(H_2/N_2)$, and the deposition temperature. The most important factor to affect the microhardness of the TiN film in this study was the denseness of the structure in connection with the degree of the lattice strain. The relationship between the lattice parameter changes and the grain size variation under all deposition conditions generally followed the grain boundary relaxation model. The (111) preferred orientation prevailed in the early stage of the deposition conditions, however, the (200) preferred orientation was developed in the later stage. The surface morphology at optimum conditions displayed a dense diamond shaped structure and the microhardness of the films was high (1700-2400Hv) regardless of the type of the substrates used.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.356-357
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• 2006

Tin oxide thin films have been prepared on display glass from mixtures of dibutyl tin diacetate as a tin source, oxygen as an oxidant by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The relationships between the properties of tin oxide thin films and various reaction parameters such as the deposition temperature, deposition time and the oxygen gas flow rate were studied. As the deposition temperature increased, the texture plane of $SnO_2$ changed from (200) plane to denser (211) and (110) planes. Lower deposition temperature and thinner thickness of deposited film led to decreasing grain size, surface roughness and electrical resistivity of the formed thin films at $325{\sim}425^{\circ}C$. The properties of fabricated $SnO_2$ films are highly changed with variations of substrate temperature and deposition time.

• Journal of the Korea Society of Computer and Information
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• v.17 no.11
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• pp.11-18
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• 2012

Debris flow deposition model is a model to predict affected areas by debris flow and random walk model (RWM) was used to build the model. Although the model was proved to be effective in the prediction of affected areas, the model has several free parameters decided experimentally. There are several well-known methods to estimate parameters, however, they cannot be applied directly to the debris flow problem due to the small size of training data. In this paper, a modified neural network, called pseudo sample neural network (PSNN), was proposed to overcome the sample size problem. In the training phase, PSNN uses pseudo samples, which are generated using the existing samples. The pseudo samples smooth the solution space and reduce the probability of falling into a local optimum. As a result, PSNN can estimate parameter more robustly than traditional neural networks do. All of these can be proved through the experiments using artificial and real data sets.

• Journal of the Korean Society of Industry Convergence
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• v.25 no.4_2
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• pp.699-706
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• 2022

In this study, Directed energy deposition (DED) among additive manufacturing is applied to repair damaged spindle key parts of planner miller. The material of the spindle key is SCM415, and the P21 Powder is used. In order to find the optimal deposition conditions for DED equipment, a single-line deposition experiment is conducted to analysis five parameters. The laser power affects the width, and the height is a parameter affected by coaxial gas and powder gas. In addition, laser power, powder feed rate, coaxial gas, and powder gas are parameters that affect dilution. Otimal deposition is that 400 W of laser power, 4.0 g/min of powder feed rate, 6.5 L/min of coaxial gas, 3.0 L/min of powder gas and 4.5 L/min of shield gas. By setting the optimum conditions, a uniform deposition cross section in the form of an ellipse can be obtained. Damage recovery process of spindle key consists of 3D shape design of the base and deposition parts, deposition path creation and deposition process, and post-processing. The hardness of deposited area with P21 powder on the SCM415 spindle key is 336 HV for the surface of the deposition, 260 HV for the boundary area, and 165 HV for the base material.

• Journal of Radiation Protection and Research
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• v.27 no.3
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• pp.165-170
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• 2002

Combined with deposition model onto the ground of radionuclides, the influence of radioactive contamination to agricultural products was analyzed due to wet deposition as well as dry deposition from radioactive air concentration during a nuclear emergency. The previous dynamic food chain model, in which initial input parameter is only radionuclide concentrations on the ground, was improved for the evaluating of radioactive contamination to agricultural products from either radionuclide concentrations in air or radionuclide concentrations on the ground. As the results, in case of deposition onto the ground, wet deposition was more dominant process than thy deposition. While the contamination levels of agricultural products were dependent on the a variety of factors such as radionuclides and rainfall rate. It means that the contamination levels of agricultural products are determined from which is more dominant process between deposition on the ground and interception onto agricultural plants.