Theoretical Model and Experimental Results of PECVD Amorphous Silicon Deposition Process

PECVD 비정질 실리콘 증착 반응의 이론적 모델과 실험결과

Mathematical modeling equations of a parallel plate type reactor were obtained in the PECVD process in preparing hydrogenated amorphous silicon. Velocity profiles, temperature profiles and concentration profiles in the reactor were calculated from the model. The theoretical approach was attempted to obtain the deposition rate and film uniformity at different operating conditions by calculating RF discharge parameters and establishing the reaction mechanisms of a-Si:H thin film. The modelling equations are solved by a finite difference method with control volume balance. The mean electrom energy in discharge was applied to model simulation parameter. The magnitudes of the predicted deposition rate are in good aggrement with those of experiment. The results of computer simulation shows that uniform deposition profiles can.