Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Microstructure and Characterization Depending on Process Parameter of SnO2 Thin Films Fabricated by PECVD Method

PECVD법에 의해 제조된 SnO2 박막의 공정변수에 따른 미세구조 및 특성

  • Published : 2006.07.01
Download PDF
⟨ Previous Next ⟩

Abstract

Tin oxide$(SnO_2)$ thin films were prepared on glass substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. $SnO_2$ thin films were prepared using gas mixture of dibutyltin diacetate as a precursor and oxygen as an oxidant at 275, 325, 375, $425^{\circ}C$, respectively as a function of deposition temperature. The XRD peaks corresponded to those of polycrystalline $SnO_2$, which is in the tetragonal system with a rutil-type structure. As the deposition temperature increased, the texture plane of $SnO_2$ changed from (200) plane to denser (211) and (110) planes. Lower deposition temperature and shorter deposition time led to decreasing surface roughness and electrical resistivity of the formed thin films at $325\sim425^{\circ}C$. The properties of $SnO_2$ films were critically affected by deposition temperature and time.

Keywords

References

  1. F. J. Yusta, M. L. Hitchman, and H. Shamlian, 'CVD preparation and characterization of tin dioxide films for electrochemical application', J. Mater. Chem., Vol. 7, No.8, p. 1421, 1997
  2. E. Shanthi, V. Dutta, A. Banerjeer, and K. L. Chopra, 'Electrical and optical properties of undoped and antimony doped tin oxide films', J. Appl. Phys., Vol. 51, No. 12, p. 6243, 1981
  3. D. Belanger, J. P. Dodelet, B. A. Lombos, and J. I. Dickson, 'Thickness dependence of transport properties of doped poly crystalline tin oxide films', J. Electrochem. Soc., Vol. 132, No.6, p. 1398, 1985 https://doi.org/10.1149/1.2114266
  4. K. H. Kim and C. G. Park, 'Electrical properties and gas sensing behavior $SnO_2$ films prepared by chemical vapor deposition', J. Electrochem. Soc., Vol. 138, No.8, p. 2408, 1991
  5. K. Ihokura and J. Watson, 'The stannic oxide gas sensor principles and applications', CRC Press, Boca Raton., FL, 1994
  6. J. I. Jung, B. C. Kim, S. H. Chang, and J. J. Kim, 'Effect of sintering atmosphere and dopant addition on the densification of $SnO_2$ ceramics', J. Kor. Ceram. Soc., Vol. 34, p. 1221, 1997
  7. J. Kane, H. P. Schweizer, and W. Kern, 'Chemical vapor deposition of antimony-doped tin oxide films formed from dibutyl tin diacetate', J. Electrochem. Soc., Vol. 123, No.2, p, 270, 1976 https://doi.org/10.1149/1.2132802
  8. S. Shanthi, C. Subramanian, and P. Ramasamy, 'Growth and characterization of antimony doped tin oxide thin films', J. Crystal Growth, Vol. 197, p. 858, 1999
  9. G. Shanon, R. Rup, and A. Mansingh, 'Growth and characterization of tin oxide films prepared by chemical vapour deposition', Thin Solid Films, Vol. 190, No.2, p. 287, 1990
  10. S. Shirakata, A. Yokoyama, and S. Isomura, 'Preparation of $SnO_2$ thin films by plsma-assisted metalorganic chemical vapor deposition', Jpn, J. Appl. Phys., Vol. 35, p. 722, 1996 https://doi.org/10.1143/JJAP.35.L722
  11. 정 진, 최승평, 신동찬, 구재본, 송호준, 박진성 '열 CVD법으로 증착된 $SnO_2$ 박막의 미세구조와 전기적 특성', 전기전자재료학회논문지, 16권, 5호, p. 441, 2003
  12. J. Vetrone and Y. W. Chung, 'Organometallic chemical vapor deposition of $SnO_2$ single crystal and polycrystalline films', J. Vac. Sci. Technol. A, Vol. 9, No.6, p. 3041, 1991 https://doi.org/10.1116/1.577441