• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.503-506
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• 2000

YBCO superconducting thick films were prepared on Ag wire by electrophoresis in acetone and ethanol with chemically modified suspension. The addition of organic compounds, such as PEG, EG into suspension solution for improving critical current density was investigated. Surface state, deposition condition, pore distribution and cracks were investigated by using SEM photographs. Controlling preparation conditions were studied for reducing these defects. As a results, in acetone solution, the surface crack of samples was decreased with increasing PEG. On the contrary, the surface crack of sample was increasing with increasing the amount of EG. In ethanol solution without I$_2$, which was generally used for an electrolyte, the deposition time was longer than this of acetone. For that reason the sample deposition in ethanol time was needed with enough stirring time for suspending YBCO powder and deposition time.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.47-48
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• 2006

Oridinal thermal spray process has developed into two ways, namely, temperature dominated represented by plasma spraying, and velocity dominated represented by HVOF. It is common for both that the particle materials sprayed are basically in melted or half melted condition. New process has developed recently, that is, Cold Spray and Aerosol Deposition. Particle's heating is limited in CS lower than half of the material's melting point. Moreover, exactly no heating is loaded in AD process. Through the investigation on common feature for these three spraying processes, potential of new material process - Particle Deposition, PD - is considered and proposed.

• International Journal of Precision Engineering and Manufacturing
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• v.6 no.4
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• pp.49-54
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• 2005

In this paper, micro structuring technique using localized electrochemical deposition (LECD) with ultra short pulses was investigated. Electric field in electrochemical cell was localized near the tool tip end region by applying pulses of a few hundreds of nano second duration, Pt-Ir tip was used as a counter electrode and copper was deposited on the copper substrate in mixed electrolyte of 0.5 M $CuSO_4$ and 0.5 M $H_2SO_4$, The effectiveness of this technique was verified by comparison with ECD using DC voltage. The deposition characteristics such as size, shape, surface, and structural density according to applied voltage and pulse duration were investigated. The proper condition was selected based on the results of the various experiments. Micro columns less than $10{\mu}m$ in diameter were fabricated using this technique. The real 3D micro structures such as micro spring and micro pattern were made by the presented method.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.12-17
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• 2019

In this study, the Ag nano-dots structure and silicon nitride film were applied to the textured wafer surface to improve the light trapping effect of mono-crystalline silicon solar cell. Ag nano-dots structure was formed by performing a heat treatment for 30 minutes at 650℃ after the deposition of 10nm Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The silicon nitride film was deposited by a Hot-wire chemical vapor deposition. The effect of light trapping was compared and analyzed through light reflectance measurements. Experimental results showed that the reflectivity increased by 0.5 ~ 1% under all nitride thickness conditions when Ag nano-dots structure was formed before nitride film deposition. In addition, when the Ag nano-dots structure is formed after deposition of the silicon nitride film, the reflectance is increased in the nitride film condition of 70 nm or more. When the HF treatment was performed for 60 seconds to improve the Ag nano-dot structure, the overall reflectance was improved, and the reflectance was 0.15% lower than that of the silicon nitride film-only sample at 90 nm silicon nitride film condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.565-571
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• 2003

We prepare the PVDF thin film using vacuum deposition method with the application of voltage and obtain the optimum deposition condition for $\beta$-PVDF thin film on the basis of the results of FT-IR, crystallinity of $\beta$ phase, surface roughness studies with varying the condition. The phase of PVDF thin film is analyzed by the FT-IR spectrum. When the substrate temperature and applied voltage increase from 3$0^{\circ}C$ to 9$0^{\circ}C$ and from 0kV to 9kV, respectively, the crystallinity of $\beta$ phase is introduced as large as 64%. It means that the substrate temperature and applied voltage allow the phase transition of $\beta$ phase to occur more easily. Also, the surface roughness of PVDF thin film decreases from 65.1nm to 36.6nm with the increase of substrate temperature. In results, we obtain the optimum deposition conditions for $\beta$-PVDF thin film from these experimental results and measure the Properties of the $\beta$-PVDF film deposited in the optimum condition. The dielectric properties such as dielectric constant and loss tangent decrease from 2.34 to 0.44 and from 0.27 to 0.04 with the increase of frequency, respectively.

• Journal of Navigation and Port Research
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• v.43 no.1
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• pp.64-71
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• 2019

It is very important to understand the mechanism of estuary topographic changes for the study of estuary management and treatment methods. In this study, the effects from the land-side, such as rainfall, river discharge, sediment discharge, and sea side, such as tide, tidal current, wave and surface sediments related to the topographic changes of the Nakdong river estuary were investigated and analyzed. Based on the analyzed data, topographic modeling was performed to analyze the topographic change and contribution of external force conditions. As a result of numerical modeling, the topographic change showed that erosion that predominates in the water directly affected by the discharge of the estuary barrage. The deposition predominates in the indirectly affected tideland. As sediments moved along the water way being sorted and distributed by the wave, the deposition predominated in the front of the barrier island. Compared with the deposition dominance, which is the result of the topographic change prediction, the impact of each external force condition gives larger erosion. However, the combined impact of each external force condition showed deposition dominant. Therefore, the topographic changes of the Nakdong river estuary are considered to be the result of various complex external factors. The impacts of each external force condition show the different contribution to each comparison area. These results should be considered when establishing the estuary management method. It must be understood that this is the result of complex interactions.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.62-65
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• 2002

Transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Coming 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures $({\leq}300^{\circ}C)$, the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.92-99
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• 1994

Diamond thin film was deposited on n type (100) Si substrate by MPECVD(Microwave plasma Enhanced Chemical Vapor Deposition). For the increase in nucleation density of diamond, Si substrate was pretreated by diamond powder or negative bias voltage was applied to the substrate during the initial deposition. In the case of retreated Si substrate, the diamond thin film quality was enhanced with increasing the total pressure in the range of 20~150 Torr. For the negative bias voltage, the formation condition of the diamond was seriously affected by $CH_4$ concentration and total pressure. The formation condition will be discussed with electrical current of substrate generated by plasma ions which depend on $CH_4$concentration, bias voltage, and total pressure.