Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)
- Volume 4 Issue 1
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- Pages.92-99
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- 1994
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- 1225-1429(pISSN)
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- 2234-5078(eISSN)
Deposition of diamond thin film by MPECVD method
마이크로웨이브 화학 기상 증착법을 이용한 다이아몬드 박막의 증착
- Sung Hoon Kim (New Materials Lab., Samsung Advanced Institute of Technology, Suwon 440-600, Korea) ;
- Young Soo Park (New Materials Lab., Samsung Advanced Institute of Technology, Suwon 440-600, Korea) ;
- Jo-Won Lee (New Materials Lab., Samsung Advanced Institute of Technology, Suwon 440-600, Korea)
- Published : 1994.03.01
Abstract
Diamond thin film was deposited on n type (100) Si substrate by MPECVD(Microwave plasma Enhanced Chemical Vapor Deposition). For the increase in nucleation density of diamond, Si substrate was pretreated by diamond powder or negative bias voltage was applied to the substrate during the initial deposition. In the case of retreated Si substrate, the diamond thin film quality was enhanced with increasing the total pressure in the range of 20~150 Torr. For the negative bias voltage, the formation condition of the diamond was seriously affected by
마이크로웨이브 화학 기상 중착법을 이용하여 n 형 Si(100) 기팡위에 다이아몬드 박막을 증착하였다. 다이아몬드의 핵생성 밀도를 향상시키기 위하여 Si 기판을 다이아몬드 분말로 전처리 하거나 negative bias를 인가하여 다이아몬드 박막을 증착하였다. 전처리한 기판에서는 다이아몬드의 순수도가 전체압력이 증가함에 따라 (20~150 Torr)향상되었으며 bias 인가시에는
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