• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.114-119
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• 2004

Silicon Nitride thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method at $550^{\circ}C$ using alternating exposures of $SiH_2Cl_2$ and $NH_3$, and the physical and electrical propeties of the deposited films were characterized. The thickness of the films was linearly increased with the number of deposition cycles, and the growth rate of the films was 0.13 nm/cycle with the reactant exposures of $3.0\times10^{9}$ L. The silicon nitride thin films deposited by Alf exhibited similar physical properties with the silicon nitride thin films deposited by low-pressure chemical vapor deposition (LPCVD) method in terms of refractive index and wet etch rate, lowering deposition temperature by more than 200 $^{\circ}C$. The ALD films showed the leakage current density of 0.79 nA/$\textrm{cm}^2$ at 3 MV/cm, which is lower than 6.95 nA/$\textrm{cm}^2$ of the LPCVD films under the same condition.

• Membrane Journal
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• v.18 no.3
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• pp.198-205
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• 2008

A novel technology for homogeneous deposition of zeolite particles on a porous support was developed so that those particles played a seeding role for the growth of zeolite crystals. After the particles were dispersed in water, the aqueous solution was 134 through the bore of a porous tubular support. By keeping the other side of the support in a vacuum, the aqueous solution passed through the pores of the support, leading the particles to be homogeneously deposited on the support. The amount of the deposited particles was investigated by changing the following operating parameters: a particle concentration in the solution, a time for deposition, and the feeding rate of the solution. The amount of the deposited particles increased from 0.0019 g to 0.0208 g as the concentration of the particles was changed from 0.01 wt% to 0.3 wt%, while the feeding rate and the deposition time were kept to 100 mL/min and 4 min, respectively. As the deposition time was varied from 1 min to 4 min, the deposition amount increased from 0.0004g to 0.0019g at the typical condition of the rest parameters. Also, it was observed that the deposited weight increased from 0.0029 g to 0.01 g as the feeding rate increased from 100 mL/min to 300 mL/min. However, the total permeance of water and ethanol decreased through the zeolite membrane as the deposited weight increased.

• Clinical and Experimental Pediatrics
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• v.53 no.7
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• pp.735-740
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• 2010

Renal fibrosis, characterized by tubulointerstitial fibrosis and glomerulosclerosis, is the final manifestation of chronic kidney disease. Renal fibrosis is characterized by an excessive accumulation and deposition of extracellular matrix components. This pathologic result usually originates from both underlying complicated cellular activities such as epithelial-to-mesenchymal transition, fibroblast activation, monocyte/macrophage infiltration, and cellular apoptosis and the activation of signaling molecules such as transforming growth factor beta and angiotensin II. However, because the pathogenesis of renal fibrosis is extremely complicated and our knowledge regarding this condition is still limited, further studies are needed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.211-214
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• 2004

Carbon nanofiber bundles were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition system. These bundles were vertically well-grown under the high negative bias voltage condition. The bundles were composed of the individual carbon nanofiber having less than 100 nm diameters. Turn-on voltage of the field emission was measured around 0.8 V/$\mu\textrm{m}$. Fowler-Nordheim plot of the measured values confirmed the field emission characteristic of the measured current.

• Journal of the Korean institute of surface engineering
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• v.33 no.1
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• pp.34-37
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• 2000

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin film's c-axis orientation and grain size were analyzed by XRD (x-ray diffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.483-484
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• 2006

In this paper, we fabricated the organic bi-stable devices under the different condition from the other groups and analyzed the electrical characteristics. Then we investigated the effects of the device structure such as organic layer thickness, middle metal layer thickness and middle metal layer deposition rate on the memory characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.685-687
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• 1999

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin films c-axis orientation and grain size were analyzed by XRD(x-ray dffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.184-185
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• 2002

최신 강자성 메모리 공정과 실리콘 비메모리 공정에서 Co, Ni, Fe 등 천이금속 계열의 증착 조건이 소자의 특성 향상 및 신뢰성 향상을 위하여 중요성이 점점 중요해 지고 있다. 강자성 메모리(MRAM)의 출현과 함께 Co, Ni, Fe 등의 수십 $\AA$ 두께를 전체 기판에 대해 균일하게 증착할 요구가 생겼다. MRAM에 요구되는 자기저항특성은 이러한 박막의 수 $\AA$ 두께 변화에 급격히 변화할 수 있으므로[1,2] 원하는 두께로 균일하게 증착 할 수 있는 기술의 확보가 필요하다[3]. (중략)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.343-346
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• 1997

This paper presents the basic characteristics of Cr thin-film, which were deposited on glass by DC magnetron sputtering. The optimized deposition condition of Cr thin-film strain gauges were input power 7w/cm$^2$and the Ar working pressure was 9mtorr. GF(Gauge Factor), TCR(Temperature Coefficient of Resistance) and TCS(Temperature Coefficient of Sensitivity) of Cr thin-film strain gauges were 5.86, 400 ppm/$^{\circ}C$ and 0 ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.58-59
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• 2006

In Spray Forming, specific enthalpy is a key parameter in the deposition process as it influences the thermal condition of the impinging droplets as well as that of the deposit surface. An empirical model for the distribution of specific enthalpy in the spray cone was developed as an easy to handle alternative to numerical models with which the descriptive partial differential equations are solved numerically. The model results were compared with the experimental data to validate its applicability.