• 한국안전학회지
• /
• 제8권3호
• /
• pp.56-63
• /
• 1993

In this study the ultrasound which has the properties of mixing, surface cleaning effect, increasing of the effective reaction surface area and increasing of the effective collision frequency, was used to enhance the recovering efficiency of Cu from the Cu-ion containning waste water. The ultrasonic reactor used in this study was dsigned and constructed for improving the disadvantage of the existing ultrasonic reactor From the experimental result and its analysis. we obtained following conclusions. 1. The ultrasound increased the rate of electrochemical deposition to 582.2% in maximum at the Condition of 0.1M-CuSO$_4$and 2.1V-overpotential. 2. This study gave the possibility of the scale-up of ultrasonic reactor and In particular, ultrasonic reactor would be effective in treatment of waste water contains a low concentration of Cu ion.

• 한국분말재료학회지
• /
• 제5권2호
• /
• pp.111-121
• /
• 1998

Thick and dense deposit of higher than 97% of theoretical density was formed by induction plasma spraying. To investigate the effects of powder morphology on the density of deposit, two different kinds of Yttria-Stabilized-Zirconia powder, METCO202NS (atomized & agglomerated) and AMDRY146 (fused & crushed), were used and compared. After plasma treatment, porous METCO202NS powder was all the more densely deposited and its density was increased. In addition to the effect of powder morphology, the process parameters such as, sheath gas composition, probe position, particle size and spraying distance, and so on, were evaluated. The result of experiment with AMDRY146 powder, particle size and spraying distance affected highly on the density of the deposit. The optimum process condition for the deposition of -75 ${\mu}m$ of 20%-Yttria-Stabilized-Zirconia powder was 120/201/min of Ar/$H_2$ gas rate, 80 kW of plasma plate power, 8 cm of probe position and 150 Torr of spraying chamber pressure, at which its density showed 97.91% of theoretical density and its deposition rate was 20 mm/min. All the results were assessed by statistical approach what is called ANOVA.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권5호
• /
• pp.470-475
• /
• 1996

Fiber-textured diamond films have been deposited on scratched silicon(100) substrate by micro wave .plasma enhanced chemical vapor deposition at the condition of micro wave power : 950 W, pressure : 60 torr, H$_{2}$ gas flow rate : 50 sccm, CH$_{4}$ gas flow rate : 1.5 sccm, substrate temperature : about 900.deg. C and deposition time : 20 hours. The films were characterized by mean of scanning electron microscopy, Raman spectroscopy and X-ray analysis.

• 한국전기전자재료학회논문지
• /
• 제13권6호
• /
• pp.459-466
• /
• 2000

For the applications in the ultra-large-scale-integration (ULSI) metallization processing copper thin films have been prepared by metal organic chemical vapor deposition (MOCVD) technology on TiN/Si substrates. The films have been deposited with varying the experimental conditions of substrate temperatures and copper source vapor pressures. The films were then annealed in a vacuum condition after the deposition and the annealing effect to the electrical conductivity of the films was measured. The grain size and the crystallinity of the films were observed to be increased by the post annealing and the electrical conductivity was also increased. The best electrical property of the copper film was obtained by in-situ annealing treatment at above 40$0^{\circ}C$ for the sample prepared at 18$0^{\circ}C$ of the substrate temperature.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.935-938
• /
• 2001

Carbon nanotubes(CNTs) was successfully grown on Ni coated silicon wafer substrate by applying PECVD technique(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni thin film of thickness ranging from 15∼30nm was prepared by electron beam evaporator method. In order to find the optimum growth condition, the type of the gas mixture such as C$_2$H$_2$-NH$_3$was systematically investigated by adjusting the gas mixing ratio in temperature of 600$^{\circ}C$ under the pressure of 0.4 torr. The diameter of the grown CNTs was 40∼150nm. As NH$_3$etching time increased the diameters of the nanotubes decreased whereas the density of nanotubes increased. TEM images clearly demonstrated synthesized nanotubes was multiwalled. We investigated electrical properties for the application of FED.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
• /
• pp.729-731
• /
• 1998

Surface passivation using glass powders results in good reliability for high voltage silicon power devices. In this paper, Zinc borosilicate glass was prepared for the purpose of passivating, and a deposition technique of glass films on the silicon surface by electrophoresis in which acetone is used as a suspension medium and a measurement technique of C-V curve has been investigated. Properties were compared using SEM, XRD, C-V Curve as a function of firing condition, temperature and atmosphere were investigated. Under 100V applied, 1 minute, $700^{\circ}C$ firing temperature, and $O_2$ atmosphere, I can get the fine films $5.8{\mu}m$ thickness with Zinc borosilicate glass. As a result of investigation of glass films, it has been found that pre-firing and annealing play an important role to achieve uniform, fine, reliable glass deposition films and Glass/Silicon interlace.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
• /
• pp.1-4
• /
• 2001

In electrophoresis, it is studied to get best condition of suspension media with alcoholic system for superconducting film. High-temperature superconductor films of $YBa_{2}Cu_{3}O_{7-x}$ were fabricated by electrophoretic deposition(EPD) from alcohol-based suspension. Maximum stability is observed for the suspension containing iso-alcohol as dispersion medium. However, for the formation of a dense and adherent coating of YBCO on a silver substrate by EPD. the best results were obtained in mixing PrOH and BuOH suspension. The superconducting critical current density($J_c$) was $1,200A/cm^2$ for the films deposited in 30% iso-PrOH and 70 % iso-BuOH suspension.

• Journal of Korean Vacuum Science & Technology
• /
• 제6권1호
• /
• pp.51-54
• /
• 2002

Polymer EL devices of glass/ITO/PI/MEH-PPV/Al structure were fabricated using spin coating and the Ionized Cluster Beam deposition technique. PMDA-ODA type thin polyimide films which can be used as a impurity blocking layer of EL device were deposited by ICB. According to our previous results, the packing densities of polyimide films were subject to change and depend on their deposition condition. By inserting a Pl layer with various thickness and packing density, I-V characteristics and life time of the devices were investigated to determine the role of a interlayer. The blocking of impurity diffusion from ITO to luminescent layer were confirmed by XPS.

• 한국세라믹학회지
• /
• 제36권9호
• /
• pp.946-953
• /
• 1999

The etching characteristics of Er-doped sodium borosilicate glass film for the planar optical waveguides were investigated using reactive ion etching. The etch rate decreased as the pressure in creased but increased as the RF power increased. The etch rate increased as the flow rate C2F gas and the amount of O2 addition increased but decreased over critical point (C2F6 7,5 accm O2 20%) The etch rate was 180${\AA}$/min under C2F6 7.5 sccm O2 20% RF power 270 W, pressure 150 mTorr. With this optimum etching condition and subsequent heat treatment at 975$^{\circ}C$ for 30 minutes planar optical waveguides having improved sidewall roughness were fabricated successfully.

• 한국세라믹학회지
• /
• 제42권7호
• /
• pp.521-524
• /
• 2005

ZnO 2-D nanowall structure with around 100 nm thickness, which is composed of tens of nm scale ZnO single crystals, was fabricated through the low temperature chemical solution growth method. Electro Chemical Deposition (ECD) technique was applied to attach the ZnO seed crystals on ITO coated glass substrate. The ZnO nanowall structure was grown in the 0.015 mol$\%$ of aqueous solution of zinc nitrate and hexamethenamine at 60$^{\circ}C$ for 20 - 40 h. The nanowall structure depends on the ECD condition or the applied voltage and duration time. The nanowall shows a photoluminescence around 550 - 700 nm spectrum range.