• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.923-929
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• 2008

On the piezoelectric polymer, PVDF (poly vinylidene fluoride), the transparent conducting oxide (TCO) electrode material thin film was deposited by roll to roll sputtering process mentioned as a mass product-friendly process for display application. The deposition method for ITO Indium Tin Oxides) as our TCO was DC magnetron sputtering optimized for polymer substrate with the low process temperature. As a result, a high transparent and good conductive ITO/PVDF film was prepared. During the process, especially, the gas mixture ratio of Ar and Oxygen was concluded as an important factor for determining the film's physical properties. There were the optimum ranges for process conditions of mixture gas ratio for ITO/PVDF From these results, the doping mechanism between the oxygen atom and the metal element, Indium or Tin was highly influenced by oxygen partial pressure condition during the deposition process at ambient temperature, which gives the conductivity to oxide electrode, as generally accepted. With our studies, the process windows of TCO for display and other application can be expected.

• Journal of Radiation Protection and Research
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• v.8 no.2
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• pp.36-40
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• 1983

Uranium radionuclides are electrodeposited on inexpensive stainless steel cathode from a mixed oxalate-chloride electrolyte. The factors affecting the optimum condition for the deposition are determined by studying the effects of deposition time, initial current, electrode spacing, pH of electrolyte and uranium concentration in the electrolyte at fixed cathode area. The experiment which was repeated 3 times at each uranium concentration with 60 minutes of deposition time, gave an error of less than 4% standard deviation at the 90% confidence level with average yield greater than 99%.

• Carbon letters
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• v.13 no.4
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• pp.205-211
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• 2012

Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope, transmission electron microscope, atomic force microscope, four-point-probe measurement, and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.

• Journal of Korean Society for Atmospheric Environment
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• v.10 no.4
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• pp.260-280
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• 1994

The STEM II(Sulfur Transport Eulerian Model II) was adapted to simulate transport/ chemistry/deposition of air Pollutants in the Eastern China and Korea. A 32 hour model simulation starting from 9 A.M. of 1989 November 25 during which no preciptation was observed. The Prevailing wind direction is from west to east. The MM4(Meteorological Model Version 4) was used to generate meteorological data such as temperatures, horizontal wind velocities and directions, humidities, air densities. Eddy diffusivities, dry deposition velocities and vertical wind velocities were calculated from the meteorological data. The initial condition and the emission data base were constructed from the measurements and governmental reports respectively. The model predictions of NO, NO$_2$, SO$_2$, $O_3$ at Seoul, Inchon and Pusan agree reasonably well with measurements. The model's predictability for the primary air pollutants is improved considerably as the time passes. Thus, it is concluded that the model's predictability can be significantly enhanced by reducing the uncertainties of initial conditions.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.159-165
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• 2002

The physical properties of the TiN films deposited by ALD using $TiCl_4$and $NH_3$have been investigated. The TiN deposition rate is ~0.6 $\AA$ under an optimum deposition condition and the resistivity of the TiN films is 200~350 $\mu\Omega$cm . According to the XRD analysis results TiN films are crystallized in the ALD process window. AES analysis results show that the Cl impurity concentration in the TiN films is lower than 1 at% and that the atomic ratio of the TiN films is 1:1. Also it is found by SEM observation that the step coverage of the TiN films on which TiN films with trenches the aspect ratio of which is 10:1 is excellent.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.31 no.3 s.258
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• pp.225-233
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• 2007

The growth of GaN on the patterned substances has proven favorable to achieve thick, crack-free GaN layers. In this paper, numerical modeling of transport and reaction of species is performed to estimate the growth rate of GaN from tile reaction of TMG(trimethly-gallium) and ammonia. GaN growth rate was estimated through the model analysis including the effect of species velocity, thermal convection and chemical reaction, and thermal condition for the uniform deposition was to be presented. The effect of shape and construction of microscopic pattern was also investigated using a simulator to perform surface analysis, and a review was done on the quantitative thickness and shape in making GaN layer on the pattern. Quantitative analysis was especially performed about the shape of reactor geometry, periodicity of pattern and flow conditions which decisively affect the quality of crystal growth. It was found that the conformal deposition could be obtained with the inclination of trench ${\Theta}>125^{\circ}$. The aspect ratio was sensitive to the void formation inside trench and the void located deep in trench with increased aspect ratio.

• Progress in Superconductivity
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• v.3 no.1
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• pp.120-124
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• 2001

To establish the deposition condition of YBCO thin film on MgO single crystal substrates, processing parameters of deposition temperature, chemical composition and oxygen partial pressure were controlled. When using a Ba-deficient composition of YB $a_{1.8}$ $Cu_3$$O_{x}$, non-superconducting phase like CuO, $CuYO_2$ were formed, but BaCu02 was formed together with Yl23 phase when the starting composition was Ba-rich ($YBa_{2.3}$ $Cu_3$ $O_{x}$). The epitaxially grown Yl23 phase was formed at 760-$810^{\circ}C$ and $P_{O2}$=0.29-0.91 Torr.r.r.r.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.83-86
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• 2005

In this study, SAM (self-assembled monolayer) was applied as an anti-adhesion layer in the nano molding process, to reduce the surface energy between the nano-stamper and the moldeded polymeric nano patterns. Before depositing SAM on the stamper, the nickel stamper was pretreated to remove oxide on the nickel stamper surface. Then, using the solution deposition method, alkanethiol SAM as an anti-adhesion layer was deposited on nickel surface. To examine the effectiveness of the SAM deposition on the metallic nano stamper, the contact angle and the lateral friction force were measured at the actual processing temperature and pressure for the case of nano compression molding and at the actual UV dose for the case of nano UV molding. The surface energy due to SAM deposition on the nickel nano stamper markedly decreased and the high hydrophobic quality of SAM on the nickel stamper maintained under the actual molding environments.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.329-329
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• 2011

We investigated the thin films of poly(3-hexylthiophene) (P3HT) and C61-butyric acid methylester (PCBM) prepared by ultrahigh vacuum (UHV) electrospray depositioin (ESD) by using in-situ XPS, UPS and ambient-pressure AFM. The morphology, chemical structures, and interface properties of these materials, most widely used for bulk heterojunction organic solar cells, were studied depending on the ESD solution compositions and concentrations. We found that the solution conductivity and flow rate as well as applied voltage are the important parameters for stable electrospray and film formation. These results suggest that UHV ESD is a viable method for the deposition of multilayers of polymers under UHV condition. We also discuss the energy level alignment for the various deposition conditions at the interface, which is one of the most important operating parameters of the bulk heterojunction organic solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.351-351
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• 2011

Graphene has drawn great interests because of its distinctive band structure and physical properties[1]. A few of the practical applications envisioned for graphene include semiconductor applications, optoelectronics (sola cell, touch screens, liquid crystal displays), and graphene based batteries/super-capacitors [2-3]. Recent work has shown that excellent electronic properties are exhibited by large-scale ultrathin graphite films, grown by chemical vapor deposition on a polycrystalline metal and transferred to a device-compatible surface[4]. In this paper, we focussed our scope for the understanding the graphene growth at different conditions, which enables to control the growth towards the application aimed. The graphene was grown using chemical vapor deposition (CVD) with methane and hydrogen gas in vacuum furnace system. The grown graphene was characterized using a scanning electron microscope(SEM) and Raman spectroscopy. We changed the growth temperature from 900 to $1050^{\circ}C$ with various gas flow rate and composition rate. The growth condition for larger domain will be discussed.