• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1448-1450
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• 1994

The breakdown voltages of punchthrough-mode diodes with cylindrical junction are analytically calculated, The proposed method, which is based on th Gauss's law, estimates the lateral expansion of the depletion region as well as the electric field and the charge distribution. The proposed method is given in terms of epitaxial layer width, the epitaxial layer doping concentration, and curvature radius of the junction edge. The calculation results agree well with the MEDICI simulation results for various device parameters.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.546-550
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• 2013

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

• Journal of Plant Biology
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• v.26 no.3
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• pp.131-139
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• 1983

Temperature response of amoebae of thermotactic mutants have been investigated. Amoebae of the mutant strain HO 428 showed positive thermotaxs which is strong at lower temperaturs and drops sharply above the growth temperature of amoebae. The temperature response of HO 428 amoebae was not affected by the length of amoebae on the grdients. HO 596 amoebae seemed to have both positive and negative thermotactic responses shortly after food depletion. Longer exposure of these amoebae on the thermal gradients induced a stronger negative response at lower temperatures and an apparent positive response at higher temperatures. A similar changes could be observed in HO 1445 amoebae. Based on the steady positive thermotactic response by HO 428 amoebae and the mode of change in termperature response at higher temperatures, 24$^{\circ}C$ and $25^{\circ}C$, by HO 596 amoebae, a model for the temperature response of vegetative Dictyostelium discoideum amoebae, strain HL 50, has been proposed. The main features of the model are: a positive response at the thermal gradients with midpoint temperatures lower than the growth temperatures of amoebae and a negative response above it.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.6
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• pp.14-21
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• 1993

MODFETs using the heterostructure of phosphorous-contained a-SiN:H: and undoped a-Si:H films have been fabricated by PECVD of SiH$_{4}$, PH$_{3}$ gases. Thecharacteristics of the devices have been invetigated and compared with conventional TFTs(CTFTs). The threshold voltage of the MODFETs was smaller than that of CTFTs, in the case of the devices using the a-SiN:H film with the relatively high phosphorous content, the threshold voltage was negative and the operation of the devices followed the depletion mode. On the other hand, on/off current ratio of the MODFETs was more than one order of magnitude higher than the CTFTs, and the field effect mobility of the former was approximately two times as high as that of the latter.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.4
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• pp.1059-1067
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• 1996

A 128/129 dual-modulus prescalar IC is designed for application to frequency synthesizers in high frequency communication systems. The FET logic used in this design is SCFL(Source Coupled FET Logic), employing depletion-mode 1.mu.m gate length GaAs MESFETs with the threshold voltage of -1.5V. This circuit consists of 8 flip-flops, 3 OR gates, 2 NOR gates, a modulus control buffer and I/O buffers, which are integrated with about 440 GaAs MESFETs on dimensions of 1.8mm. For $V_{DD}$ and $V_{SS}$ power supply voltages 5V and -3.3V Commonly used in TTL and ECL circuits are determined, respectively. The simulation results taking into account the threshold voltage variation of .+-.0.2V and the power supply variation of .+-.1V demonstrate that the designed prescalar can operate up to 2GHz. This prescalar is fabricated using the ETRI MMIC foundary process and the measured maximum operating frquency is 621MHz.

• The Korean Journal of Physiology and Pharmacology
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• v.12 no.5
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• pp.259-265
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• 2008

$[Ca^{2+}]_i$ transients by reverse mode of cardiac $Na^+/Ca^{2+}$ exchanger (NCX1) were recorded in fura-2 loaded BHK cells with stable expression of NCX1. Repeated stimulation of reverse NCX1 produced a long-lasting decrease of $Ca^{2+}$ transients ('rundown'). Rundown of NCX1 was independent of membrane $PIP_2$ depletion. Although the activation of protein kinase C (PKC) was observed during the $Ca^{2+}$ transients, neither a selective PKC inhibitor (calphostin C) nor a PKC activator (PMA) changed the degrees of rundown. By comparison, a non-specific PKC inhibitor, staurosporine (STS), reversed rundown in a dose-dependent and reversible manner. The action of STS was unaffected by pretreatment of the cells with calphostin C, PMA, or forskolin. Taken together, the results suggest that the stimulation of reverse NCX1 by STS is independent of PKC and/or PKA inhibition.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1250-1252
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• 1993

Enhancement mode n-channel TFT leakage current(off current : $V_G<0$) that is little agreement on the conduction mechanism is major disadvantage of poly-silicon TFT in practical use, characteristic analysis and model ing. In this paper, new modeling of leakage current is proposed. The activation energy of leakage current, which is dependent on gate voltage, and leakage current dependent on poly silicon thickness are plausibly explained with this model. This model indicate that the reduction of leakage current is attributable to a decrease of maximum laterial electric field strength in the drain depletion region and to the density of trap.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.311-311
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• 2016

최근 고성능 디스플레이 개발이 요구되면서 기존 비정질 실리콘(a-Si)을 대체할 산화물 반도체에 대한 연구 관심이 급증하고 있다. 여러 종류의 산화물 반도체 중 a-IGZO (amorphous indium-gallium-zinc oxide)가 높은 전계효과 이동도, 저온 공정, 넓은 밴드갭으로 인한 투명성 등의 장점을 가지며 가장 연구가 활발하게 보고되고 있다. 기존에는 SG(단일 게이트) TFT가 주로 제작 되었지만 본 연구에서는 DG(이중 게이트) 구조를 적용하여 고성능의 a-IGZO 기반 박막 트랜지스터(TFT)를 구현하였다. SG mode에서는 하나의 게이트가 채널 전체 영역을 제어하지만, double gate mode에서는 상, 하부 두 개의 게이트가 동시에 채널 영역을 제어하기 때문에 채널층의 형성이 빠르게 이루어지고, 이는 TFT 스위칭 속도를 향상시킨다. 또한, 상호 모듈레이션 효과로 인해 S.S(subthreshold swing)값이 낮아질 뿐만 아니라, 상(TG), 하부 게이트(BG) 절연막의 계면 산란 현상이 줄어들기 때문에 이동도가 향상되고 누설전류 감소 및 안정성이 향상되는 효과를 얻을 수 있다. Dual gate mode로 동작을 시키면, TG(BG)에는 일정한 positive(or negative)전압을 인가하면서 BG(TG)에 전압을 가해주게 된다. 이 때, 소자의 채널층은 depletion(or enhancement) mode로 동작하여 다른 전기적인 특성에는 영향을 미치지 않으면서 문턱 전압을 쉽게 조절 할 수 있는 장점도 있다. 제작된 소자는 p-type bulk silicon 위에 thermal SiO2 산화막이 100 nm 형성된 기판을 사용하였다. 표준 RCA 클리닝을 진행한 후 BG 형성을 위해 150 nm 두께의 ITO를 증착하고, BG 절연막으로 두께의 SiO2를 300 nm 증착하였다. 이 후, 채널층 형성을 위하여 50 nm 두께의 a-IGZO를 증착하였고, 소스/드레인(S/D) 전극은 BG와 동일한 조건으로 ITO 100 nm를 증착하였다. TG 절연막은 BG 절연막과 동일한 조건에서 SiO2를 50 nm 증착하였다. TG는 S/D 증착 조건과 동일한 조건에서, 150 nm 두께로 증착 하였다. 전극 물질과, 절연막 물질은 모두 RF magnetron sputter를 이용하여 증착되었고, 또한 모든 patterning 과정은 표준 photolithography, wet etching, lift-off 공정을 통하여 이루어졌다. 후속 열처리 공정으로 퍼니스에서 질소 가스 분위기, $300^{\circ}C$ 온도에서 30 분 동안 진행하였다. 결과적으로 $9.06cm2/V{\cdot}s$, 255.7 mV/dec, $1.8{\times}106$의 전계효과 이동도, S.S, on-off ratio값을 갖는 SG와 비교하여 double gate mode에서는 $51.3cm2/V{\cdot}s$, 110.7 mV/dec, $3.2{\times}108$의 값을 나타내며 훌륭한 전기적 특성을 보였고, dual gate mode에서는 약 5.22의 coupling ratio를 나타내었다. 따라서 산화물 반도체 a-IGZO TFT의 이중게이트 구조는 우수한 전기적 특성을 나타내며 차세대 디스플레이 시장에서 훌륭한 역할을 할 것으로 기대된다.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.46 no.10
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• pp.806-813
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• 2018

The fracture of a turbine blade of aerospace engine is presented. Although there are a lot of causes and failure modes in blades, the main failure modes are two ways that fracture and fatigue. Degradation of blade material affects most failure modes. Total propagation of failure in this study specifies failure of fracture type. Some section appears fatigue mode. Especially since this study describes analysis of failure for blade in high temperature, it can be a case in point. Analysed blade is Ni super alloy. Investigations of blade are visual inspection, material, microstructure, high temperature stress rupture creep test, analysis and fracture surface, etc. The root cause for fracture was stress rupture due to abnormal thermal environment. Thermal property of Ni super alloy is excellent but if each chemical composition of alloys are different due to change mechanical properties, selection of material is very important.

• Molecules and Cells
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• v.39 no.4
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• pp.322-329
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• 2016

Voltage-gated $Ca^{2+}$ ($Ca_V$) channels are dynamically modulated by Gprotein-coupled receptors (GPCR). The $M_1$ muscarinic receptor stimulation is known to enhance $Ca_V2.3$ channel gating through the activation of protein kinase C (PKC). Here, we found that $M_1$ receptors also inhibit $Ca_V2.3$ currents when the channels are fully activated by PKC. In whole-cell configuration, the application of phorbol 12-myristate 13-acetate (PMA), a PKC activator, potentiated $Ca_V2.3$ currents by ~two-fold. After the PMA-induced potentiation, stimulation of $M_1$ receptors decreased the $Ca_V2.3$ currents by $52{\pm}8%$. We examined whether the depletion of phosphatidylinositol 4,5-bisphosphate ($PI(4,5)P_2$) is responsible for the muscarinic suppression of $Ca_V2.3$ currents by using two methods: the Danio rerio voltage-sensing phosphatase (Dr-VSP) system and the rapamycin-induced translocatable pseudojanin (PJ) system. First, dephosphorylation of $PI(4,5)P_2$ to phosphatidylinositol 4-phosphate (PI(4)P) by Dr-VSP significantly suppressed $Ca_V2.3$ currents, by $53{\pm}3%$. Next, dephosphorylation of both PI(4)P and $PI(4,5)P_2$ to PI by PJ translocation further decreased the current by up to $66{\pm}3%$. The results suggest that $Ca_V2.3$ currents are modulated by the $M_1$ receptor in a dual mode-that is, potentiation through the activation of PKC and suppression by the depletion of membrane $PI(4,5)P_2$. Our results also suggest that there is rapid turnover between PI(4)P and $PI(4,5)P_2$ in the plasma membrane.