• Journal of Applied Biological Chemistry
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• 제56권2호
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• pp.109-112
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• 2013

Azole fungicides are one of the most wide-spread antifungal compounds in agriculture and pharmaceutical applications. Their major mode of action is the inhibition of ergosterol biosynthesis, giving depletion of ergosterol, precursors and abnormal steroids. However, metabolic consequences of such inhibition, other than steroidal metabolitesare not well established. Comprehensive metabolic profiles of Saccharomyces cerevisiae has been presented in this study. Wild type yeast was treated either with glucose as control or azole fungicide (ketoconazole). Both polar metabolites and lipids were analyzed with gas chromatography-mass spectrometry. Approximately over 180 metabolites were characterized, among which 18 of them were accumulated or depleted by fungicide treatment. Steroid profile gives the most prominent differences, including the accumulation of lanosterol and the depletion of zymosterol and ergosterol. However, the polar metabolite profile was also highly different in pesticide treatment. The concentration of proline and its precursors, glutamate and ornithine were markedly reduced by ketoconazole. Lysine and glycine level was also decreased while the concentrations of serine and homoserine were increased. The overall metabolic profile indicates that azole fungicide treatment induces the depletion of many polar metabolites, which are important in stress response.

• 전자공학회논문지
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• 제51권1호
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• pp.225-232
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• 2014

평판 도파로에서 Cerenkov-idler configuration 형태의 광학적 매개증폭에 대해서 결합모드 이론을 적용하여 결합모드 방정식을 유도하고, 이 방정식의 근사해를 펌핑광의 고갈(depletion)이 없는 경우에 대해서 구한다. 이 근사해로부터 발생되는 idler의 체렌코프 복사각이 $0^{\circ}$도에 접근할 때 signal의 이득이 크게 향상될 수 있음을 보여주고 수치적 예를 보인다.

• 대한전자공학회논문지SD
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• 제49권2호
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• pp.15-22
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• 2012

본 논문에서 공핍 모드 n-채널 InGaZnO 박막트랜지스터를 이용하여 소비전력이 낮은 스캔 구동 회로를 제안한다. 제안된 스캔 구동 회로는 단 2개의 클록 신호만을 사용하고 추가적인 마스킹 신호나 회로가 필요 없이 이웃하는 스캔 출력 간에 겹쳐짐이 없는 스캔 출력 신호를 만들어 낸다. 클록 신호를 줄임과 동시에 단락 전류를 줄임으로써 소비전력을 줄일 수 있었다. 모의 실험 결과 트랜지스터 문턱전압의 편차 범위가 -3.0 ~ 1.0V일 때에도 스캔 출력 신호가 정상적으로 출력됨을 확인하였다. XGA의 해상도를 갖는 디스플레이를 대상으로 양과 음의 전원 전압이 각각 15V, -5V이고 동작 주파수가 46KHz일 때, 스캔구동 회로의 소비전력이 4.89mW이다.

• 대한전자공학회논문지SD
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• 제37권1호
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• pp.1-7
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• 2000

본 논문에서는 반절연성 GaAs 기판위에 $Al_2O_3$ 절연막이 제이트 절연막으로 이용된 공핍형보드 n형 채널 GaAs MOSFET(depletion mode n-channel GaAs MOSFET)를 제조하였다. 반절연성 GaAs 기판위에 1 ${\mu}$m의 GaAs 버퍼층, 1500 ${\AA}$의 n형 GaAs층, 500 ${\AA}$의 AlAs층, 그리고 50 ${\AA}$의 캡층을 차례로 성장시키고 습식열산화 시켰으며, 이를 통하여 AlAs층은 완전히 $Al_2O_3$층으로 변환되었다. 제조된 MOSFET의 I-V, $g_m$, breakdown특성 측정 등을 통하여 AlAs/GaAs epilayer/S${\cdot}$I GaAs 구조의 습식열산화는 공핍형 모드 GaAs MOSFET를 구현하기에 적합함을 알 수 있다.

• Journal of Korean Society for Atmospheric Environment
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• 제21권E1호
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• pp.23-35
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• 2005

Size distribution of particulate water-soluble ion components was measured at Gosan, Korea using a micro-orifice uniform deposit impactor (MOUDI). Sulfate, ammonium, and nitrate showed peaks in three size ranges; Sulfate and ammonium were of dominant species measured in the fine mode ($D_{p} < 1.8 {\mu}m$). One peak was observed in the condensation mode ($0.218\sim0.532{\mu}m$), and the other peak was obtained in the droplet mode ($0.532\sim1.8{\mu}m$). Considering the fact that the equivalent ratios of ammonium to sulfate ranged from 0.5 to 1.0 in these size ranges, it is inferred that they formed sufficiently neutralized compounds such as ($NH_{4})_{2}SO_{4} and (NH_{4})_{3}H(SO_{4})_{2}$ during the long-range transport of anthropogenic pollutants. On the other hand, nitrate was distributed mainly in the coarse mode ($3.1\sim6.2{\mu}m$) combined with soil and sea salt. Two sets of MOUDI samples were collected in each season. One sample was collected when the concentrations of criteria air pollutants were relatively high, but the other represented relatively clean air quality. The concentrations of sulfate and ammonium particles in droplet mode were the highest in winter and the lowest in summer. When the air quality was bad, the increase of nitrate was observed in the condensation mode ($0.218\sim0.282{\mu}m$). It thus suggests that the nitrate particles were produced through gas phase reaction of nitric acid with ammonia. Chloride depletion was remarkably high in summer due to the high temperature and relative humidity.

• Nuclear Engineering and Technology
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• 제46권3호
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• pp.343-352
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• 2014

Uncertainty and sensitivity analyses with respect to nuclear data are performed with depletion calculations for BWR and PWR fuel assemblies specified in the framework of the UAM-LWR Benchmark Phase II. For this, the GRS sampling based tool XSUSA is employed together with the TRITON depletion sequences from the SCALE 6.1 code system. Uncertainties for multiplication factors and nuclide inventories are determined, as well as the main contributors to these result uncertainties by calculating importance indicators. The corresponding neutron transport calculations are performed with the deterministic discrete-ordinates code NEWT. In addition, the Monte Carlo code KENO in multi-group mode is used to demonstrate a method with which the number of neutron histories per calculation run can be substantially reduced as compared to that in a calculation for the nominal case without uncertainties, while uncertainties and sensitivities are obtained with almost the same accuracy.

• 대한전자공학회논문지
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• 제24권5호
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• pp.794-803
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• 1987

In this paper, the SPICE 2.G6 JFET subroutine and other related subroutines are modified for circuit simulation of GaAs MESFET IC's. The hyperbolic tangent model is used for the drain current-voltage characteristics of GaAs MESFET's and derived channel-conductance and drain-conductance model from the above current model are implemented into small-signal model of GaAs MESFET's. And, device capacitance model which consider after-pinch-off state are modified, and device charge model for SPICE 2G.6 are proposed. The result of modification is shown to be suitable for GaAs circuit simulator, showing good agreement with experimetal results. Forthermore the DC convergence of this paper is better than that of SPICE 2.G JFET subroutine. GaAs MESFET model in this paper is applied for both depletion mode GaAs MESFET and enhancement-mode GaAs MESFET without difficulty.

• Ocean Systems Engineering
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• 제2권1호
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• pp.17-31
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• 2012

This study investigated the behavior of a non-isothermal $CO_2$ bubble formed through a leak process from a high-pressure source in a deep sea. Isenthalpic interpretation was employed to predict the state of the bubble just after the leak. Three modes of mass loss from the rising bubble were demonstrated: dissolution induced by mass transfer, condensation by heat transfer and phase separation by pressure decrease. A graphical interpretation of the last mode was provided in the pressure-enthalpy diagram. A threshold pressure (17.12 bar) was identified below which the last mode was no longer present. The second mode was as effective as the first for a bubble formed in deep water, leading to faster mass loss. To the contrary, only the first mode was active for a bubble formed in a shallow region. The third mode was insignificant for all cases.

• Transactions on Electrical and Electronic Materials
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• 제18권5호
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• pp.250-252
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• 2017

High-performance full swing logic inverters were fabricated using amorphous 1 wt% Si doped indium-zinc-oxide (a-SIZO) thin films with different channel layer thicknesses. In the inverter configuration, the threshold voltage was adjusted by varying the thickness of the channel layer. The depletion mode (D-mode) device used a TFT with a channel layer thickness of 60 nm as it exhibited the most negative threshold voltage (-1.67 V). Inverters using enhancement mode (E-mode) devices were fabricated using TFTs with channel layer thicknesses of 20 or 40 nm with excellent subthreshold slope (S.S). Both the inverters exhibited high voltage gain values of 30.74 and 28.56, respectively at $V_{DD}=15V$. It was confirmed that the voltage gain can be improved by increasing the S.S value.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.464-465
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• 2009

A new level shifter using n-channel aluminum-doped zinc tin oxide (AZTO) thin film transistors (TFTs) was proposed to integrate driving circuits on qVGA panels for mobile display applications. The circuit used positive feedback loop to overcome limitations of circuits designed with oxide TFTs which is depletion mode n-channel TFTs. The measured results shows that the proposed circuit shifts 10 V input voltage to 20 V output voltage and its power consumption is 0.46 mW when the supply voltage is 20 V and the operating frequency is 10 kHz.