• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1085-1091
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• 2006

The microstructure, electrical properties, and its stability of (Pr, Co, Cr, La)-doped ZnO varistors were investigated at different sintering temperatures in the range of $1230{\sim}1300^{\circ}C$. As the sintering temperature increased, the sintered density increased from 5.50 to $5.77g/cm^3$, the varistor voltage decreased from 777.9 to 108.0 V/mm, the nonlinear coefficient decreased from 77.0 to 7.1, and the leakage current increased from $0.4{\mu}A\;to\;50.6{\mu}A$. On the other hand, the donor concentration increased from $0.90{\times}10^{18}\;to\;2.59{\times}10^{18}/cm^3$ and the barrier height decreased from 1.89 to 0.69 eV with increasing temperature. The stability of nonlinear electrical properties was obtained from sintering temperature of $1260^{\circ}C$. The varistors sintered at $1260^{\circ}C$ marked the high electrical stability, with $%{\Delta}V_{1mA}=+1.9%,\;%{\Delta}a=10.6%,\;and\;%{\Delta}I_L=+20%$ for DC accelerated aging stress state of $0.95V_{1mA}/150^{\circ}C/24h$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.8
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• pp.1887-1894
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• 2010

This paper proposes a new switched-capacitor sigma-delta modulator for automotive radars. Developed modulator is used to perform high-resolution analog-to-digital conversion (ADC) of high frequency band signal in a radar system. It has supply voltage of 2.7V, and has body-effect compensated switch configuration with low voltage and low distortion. The modulator has been implemented in a $0.25{\mu}m$ double-poly and triple-metal standard CMOS process, and it has die area of $1.9{\times}1.5mm^{2}$. It showed better total harmonic distortion of 20dB than the conventional bootstrapped circuit at the supply voltage of 2.7V.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.224-225
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• 2002

펨토초 모드록 레이저는 공진기의 왕복시간 $\tau$마다 펨토초 폭을 갖는 펄스를 발생시키고, Fourier 변환에 의해 주파수 공간에서는 일정한 주파수 간격 $\Delta$ = 1/$\tau$을 가지는 불연속 스펙트럼, 즉 광빗 스펙트럼을 갖게 된다(1). 광빗의 간격, 즉 펄스의 반복률, 은 $\Delta$ ： v$_{g}$l$_{c}$의 관계식에 의해 그룹속도(v$_{g}$)와 공진기 길이(l$_{c}$)에 의해 결정된다. 광빗의 간격을 고정시키기 위한 가장 일반적인 방법은 공진기 길이를 일정하게 유지하는 것이다. (중략)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.381-381
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• 2010

From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa2Se4singlecrystalthinfilm, wehavefoundthatthevaluesofspinorbitsplitting$\Delta$soandthecrystalfieldsplitting$\Delta$crwere251. 9meVand 183.2me Vat 10K, respectively. FromthephotolwninescencemeasurementontheZnGa2Se4singlecrystalthinfilm,weobservedfreeexcition(EX)existingonlyhighqualitycrystalandneutralboundexiciton(A0,X)havingverystrongpeakintensity.Then,thefull-width-at-half-maximum(FWHM)andbindingenergyofueutralacceptorboundexcitionwerel1meVand24.4meV,respectivity.ByHaynesrule,an activation energy of impurity was 122 meV.

• Journal of the Korean Mathematical Society
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• v.31 no.3
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• pp.521-537
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• 1994

We consider the Schrodinger equation of quantum mechanics $$ i\hbar\frac{\partial t}{\partial}\Gamma(t, \vec{\eta}) = -\frac{2m}{\hbar}\Delta(t, \vec{\eta}) + V(\vec{\eta}\Gamma(t, \vec{\eta}) (1.1) $$ $$ \Gamma(0, \vec{\eta}) = \psi(\vec{\eta}), \vec{\eta} \in R^n $$ where $\Delta$ is the Laplacian on $R^n$, $\hbar$ is Plank's constant and V is a suitable potential.

• Communications of the Korean Mathematical Society
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• v.20 no.2
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• pp.351-358
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• 2005

We study asymptotic equivalence between nonlinear difference system $$\Delta\chi(n)=f(n,\chi(n))$$ and its variational system $${\Delta}v(n)=f_{\chi}(n,0)v(n)$$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.438-445
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• 2017

This paper presents a low-power high-resolution band-pass ${\Sigma}{\Delta}$ ADC for accelerometer applications. The proposed band-pass ${\Sigma}{\Delta}$ ADC consists of a high-performance 6-th order feed-forward ${\Sigma}{\Delta}$ modulator with 1-bit quantization and a low-power, area-efficient digital filter. The ADC is fabricated in 180 nm 1P6M mixed-signal CMOS process with a die area of $5mm^2$. This high-resolution ADC got 90 dB peak signal to noise plus distortion ratio (SNDR) and 96 dB dynamic range (DR) over 4 kHz bandwidth, while the intermediate frequency (IF) is shifting from 100 KHz to 200 KHz. The power dissipation of the chip is 5.6 mW under 1.8 V (digital)/3.3 V (analog) power supply.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.8-14
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• 2016

화학 결합을 이해하는 중요한 방법 중 하나는 결합이 가지는 고유한 진동 모드를 분석하는 것이다. 진동 모드의 변화를 관측함으로써 다양한 외부 자극과 분자의 상호작용에 대한 연구도 가능하다. 본 연구에서는 전기장이 가해진 물 분자의 진동 모드 변화를 분석함으로써 전기장과 물분자의 상호작용이 화학 결합에 미치는 영향을 알아보았다. 물 분자의 특정 O-H 결합 방향으로 전기장을 걸어주었을 때 신축 진동수의 변화를 살펴봄으로써 결합의 변화를 분석했다. 전기장에 따른 결합의 진동수 변화를 vibrational Stark effect (VSE)라 하고 그 정도를 Stark tuning rate ${\Delta}{\mu}$ ($={\Delta}v/{\Delta}E$, ${\Delta}v$ :진동수의 변화, ${\Delta}E$: 전기장의 변화)로 정의한다. 이때 Stark tuning rate에 영향을 미치는 요소는 전기장에 의한 (1) 분자 구조 변화(geometric effect)와 (2) 전자 구조의 분극현상(polarization effect)으로 나누어 생각해 볼 수 있다. 본 연구에서 물 단일체, 이중체, 사중체의 O-H 결합에 대해 살펴본 결과, VSE 효과에 주로 영향을 미치는 것은 전기장에 의한 구조 변화인 것으로 나타났다. 이를 통해 전기장이 주는 전자 구조 분극 효과는 크지 않지만 이를 통해 유발되는 구조 변화에 의해 진동수 (또는 화학 결합의 세기)가 크게 변한다는 것을 알 수 있다. 그렇기 때문에 수소 결합 안정화로 인해 구조 변화가 쉬운 물 이중체, 사중체에서 VSE 효과가 크게 나타났다. 추가적으로 물 클러스터에서 형성되는 내부 전기장과 O-H 결합의 포텐셜 비조화성(anharmonicity)이 VSE에 주는 영향에 대한 연구도 수행하였다.

• Journal of Astronomy and Space Sciences
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• v.36 no.3
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• pp.213-223
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• 2019

This paper analyzes delta-Vs to maintain an extremely low altitude on the Moon and investigates the possibilities of performing a CubeSat mission. To formulate the station-keeping (SK) problem at an extremely low altitude, current work has utilized real-flight performance proven software, the Systems Tool Kit Astrogator by Analytical Graphics Inc. With a high-fidelity force model, properties of SK maneuver delta-Vs to maintain an extremely low altitude are successfully derived with respect to different sets of reference orbits; of different altitudes as well as deadband limits. The effect of the degree and order selection of lunar gravitational harmonics on the overall SK maneuver strategy is also analyzed. Based on the derived SK maneuver delta-V costs, the possibilities of performing a CubeSat mission are analyzed with the expected mission lifetime by applying the current flight-proven miniaturized propulsion system performances. Moreover, the lunar surface coverage as well as the orbital characteristics of a candidate reference orbit are discussed. As a result, it is concluded that an approximately 15-kg class CubeSat could maintain an orbit (30-50 km reference altitude having ${\pm}10km$ deadband limits) around the Moon for 1-6 months and provide almost full coverage of the lunar surface.