• Journal of the Korean Ceramic Society
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• v.28 no.5
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• pp.383-389
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• 1991

The analysis of degradation phenomena of poled PZT ceramics was investigated relate to piezoelectric equivalent circuit elements. As a result, in the case of impressed mechanical shock on poled specimen of degradation phenomena was explained by domain rearrangement, and in the case of left in air, degradation phenomena was explained by space charge diffusion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.857-860
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• 2000

The objective of this paper is to demonstrate degradation phenomena through DC degradation tests and predicts degradation phenomena as a function of time from the tests. The ZnO varistor used in this investigation were fabricated by standard ceramic techniques. Especial, these were sintered in nitrogen atmosphere, at 2 h, for $1300^{\circ}C$. The conditions of DC degradation test were 115$\pm$$2^{\circ}C$for 0, 2, 4, and 8 h, respectively. To demonstrate the degradation phenomena of ZnO varistors, Voltagecurrent analyses were performed before and after the degradation test, and frequency analyses were used with the time of the degradation tests. It was found that the degradation occurred in not grain but grain boundary and the degradation behavior of varistors was unsymmetrically degraded with the direction of tests.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.47-51
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• 2001

The electrical degradation phenomena of epoxy composites to be used as a molding material for transformers were studied. The electrets were first manufactured by applying high voltages to five kinds of specimens given a mixing rate, and then TSC(Thermally Stimulated Current) values at the temperature range of $-160\sim200[^{\circ}C]$ were measured from a series of experiments. The behaviour of carrier and its origin in epoxy composites were examined, respectively, And various effects of electrical degradation on epoxy composites were also discussed in this study.

• Structural Engineering and Mechanics
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• v.9 no.6
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• pp.601-613
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• 2000

Existing models for the shear strength degradation of reinforced concrete members present varied conceptual approaches to interpreting test data. The relative superiority of one approach over the others is difficult to determine, particularly given the sparseness of ideal test data. Nevertheless, existing models are compared using a suite of test data that were used for the development of one such model, and significant differences emerge. Rather than relying purely on column test data, the body of knowledge concerning degradation of concrete as a material is considered. Confined concrete relations are examined to infer details of the degradation process, and to establish a framework for developing phenomenologically-based models for shear strength degradation in reinforced concrete members. The possibility of linking column shear strength degradation with material degradation phenomena is explored with a simple model. The model is applied to the results of 7 column tests, and it is found that such a link is sustainable. It is expected that models founded on material degradation phenomena will be more reliable and more broadly applicable than the current generation of empirical shear strength degradation models.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.7
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• pp.1121-1127
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• 1994

The accelerated degradation phenomena in amorphous silicon thin film transistors due to both electrical stress and visible light illumination under the elevated temperature have been investigated systematically as a function of gate bias, light intensity, and stress time. It has been found that, in case of electrical stress, the thrshold voltage shifts of a-Si:H TFT's may be attributed to the defect creation process at the early stage, while the charge trapping phenomena may be dominant when the stressing periods exceed about 2 hours. It has been also observed that the degradation in the device characteristics of a-Si:H TFT's is accelerated due to multiple stress effects, where the defect creation mechanism may be more responsible for the degradation rather than the charge trapping mechanism.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.32-38
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• 2003

This works reports the measurement and analysis results on the hot electron induced device degradation in Gate-All-Around SOI MOSFET's, which were fabricated using commercially available SIMOX material. It is observed that the worst-case condition of the device degradation in nMOSFETs is $V_{GS}$ = $V_{TH}$ due to the higher impact ionization rate when the parasitic bipolar transistor action is activated. It is confirmed that the device degradation is caused by the interface state generation from the extracted degradation rate and the dynamic transconductance measurement. The drain current degradation with the stress gate voltages shows that the device degradation of pMOSFETs is dominantly governed by the trapping of hot electrons, which are generated in drain avalanche hot carrier phenomena.r phenomena.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.439-444
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• 1994

The influence of the direction of applied compressive stress on degradation mechanism ofpoled PZT sample was studied. When compressive stress perpendicular to poling direction was appliedon poled PZT sample, the degradation phenomena was explained by the diffusion of space chargepolarization. On the contrary, compressive stress parallel to poling direction was applied, it wasexplained by the rearrangement of 90" domains. As the grain size increased, the degradation phenomenawas promoted. It is attributed to different internal stress due to difference of grain size. of grain size.

• Proceedings of the Korean Society of Computer Information Conference
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• 2011.06a
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• pp.351-354
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• 2011

The electrical degradation phenomena of epoxy composites to be used as a molding material for transformers were studied. The electrets were first manufactured by applying high voltages to five kinds of specimens given a mixing rate, and then TSC(Thermally Stimulated Current) values at the temperature range of $-160{\sim}200[^{\circ}C]$ were measured from a series of experiments. The behaviour of carrier and its origin in epoxy composites were examined, respectively. And various effects of electrical degradation on epoxy composites were also discussed in this study.

• Proceedings of the Earthquake Engineering Society of Korea Conference
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• 2001.04a
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• pp.353-360
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• 2001

An analysis procedure of 2-dimensional bridge dynamics has been developed by using force-deformation model, which simulates the pier motion under biaxial bending due to the bi-directional input seismic excitations. A three-dimensional mechanical model is utilized, which can consider the other major phenomena such as pounding, rotation of the superstructure, abutment stiffness degradation, and motions of the foundation motions. The bi-directional dynamic behaviors of the bridge are then examined by investigating the relative displacements of each oscillator to the ground. It is found that the nonlinearity of the pier due to biaxial bending affects the pier motions, but the global bridge behaviors are greatly governed by the pounding phenomena and stiffness degradation of the abutment-backfill system. Especially, the relative displacement of the abutment system (A2) with movable supports to the ground is increased about 30% due to the abutment stiffness degradation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.153-160
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• 2001

In order to analyze the degradation process of epoxy/glass fiber for outdoor condition, FRP laminate was exposed to high temperature. Then, the degradation process was evaluated by comparing contact angle, surface potential, surface resistivity, and XPS. The experimental results showed that the amount of weight loss, contact angle, surface potential and surface resistivity increased up to 200 $^{\circ}C$ as a function of temperature. These phenomena show the existence of hydrophobic surface. With the change to the hydrophobic surface and the electrical potential and resistivity on FRP surface increased. In XPS to analyze surface chemical structures, the increased hydrophobicity in thermal increase of unsaturated double bond in carbon chains. Aslo, thermal treatment caused the discoloration on the point of treated surface. These phenomena were attributed to the generations of ether group.