• Title/Summary/Keyword: defect engineering

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Features Extraction and Mechanism Analysis of Partial Discharge Development under Protrusion Defect

  • Dong, Yu-Lin;Tang, Ju;Zeng, Fu-Ping;Liu, Min
    • Journal of Electrical Engineering and Technology
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    • v.10 no.1
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    • pp.344-354
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    • 2015
  • In order to study the development of partial discharge (PD) under typical protrusion defects in gas-insulated switchgear, we applied step voltages on the defect and obtained the ${\varphi}-u$ and ${\varphi}-n$ spectrograms of ultra-high frequency (UHF) PD signals in various PD stages. Furthermore, we extracted seven kinds of features to characterize the degree of deterioration of insulation and analyzed their values, variation trends, and change rates. These characteristics were inconsistent with the development of PD. Hence, the differences of these features could describe the severity of PD. In addition, these characteristics could provide integrated characteristics regarding PD development and improve the reliability of PD severity assessment because these characteristics were extracted from different angles. To explain the variation laws of these seven kinds of parameters, we analyzed the relevant physical mechanism by considering the microphysical process of PD formation and development as well as the distortion effect generated by the space charges on the initial field. The relevant physical mechanism effectively allocated PD severity among these features for assessment, and the effectiveness and reliability of using these features to assess PD severity were proved by testing a large number of PD samples.

The study on cell Vth distibution induced by heavily doped channel ionn and Si-SiN stress in flash memory cell (과도한 채널 이온 주입 농도 및 Si-SiN 스트레스가 플래쉬 메모리셀 산포에 미치는 영향)

  • Lee Chi-Kyoung;Park Jung-Ho;Kim Han-Su;Park Kyu-Charn
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.485-488
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    • 2004
  • As scaling down the cell channel length, the increment of B concentration in channel region is inevitable to overcome the punch-through, especially in flash memory cell with 90nm technology. This paper shows that the high dose ion implantation in channel cause the Si defect. which has been proved to be the major cause of the tailed Vth in distribution. And also mechanical stress due to SiN-anneal process can induce the Si dislocation. and get worse it. With decreasing the channel implantation dose, skipping the anneal and reducing the mechanical stress, Si defect problem is solved completely. We are verify first that the optimization of B concentration in channel must be certainly considered in order to improve Si defect. It is also certainly necessary to stabilize the distribution of cell Vth in the next generation of flash memory.

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Electrical Characteristics of Solution Processed DAL TFT with Various Mol concentration of Front channel

  • Kim, Hyunki;Choi, Byoungdeog
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.211.2-211.2
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    • 2015
  • In order to investigate the effect of front channel in DAL (dual active layer) TFT (thin film transistor), we successfully fabricated DAL TFT composed of ITZO and IGZO as active layer using the solution process. In this structure, ITZO and IGZO active layer were used as front and back channel, respectively. The front channel was changed from 0.05 to 0.2 M at fixed 0.3 M IGZO of back channel. When the mol concentration of front channel was increased, the threshold voltage (VTH) was increased from 2.0 to -11.9 V and off current also was increased from 10-12 to 10-11. This phenomenon is due to increasing the carrier concentration by increasing the volume of the front channel. The saturation mobility of DAL TFT with 0.05, 0.1, and 0.2 M ITZO were 0.45, 4.3, and $0.65cm2/V{\cdot}s$. Even though 0.2 M ITZO has higher carrier concentration than 0.05 and 0.1 M ITZO, the 0.1 M ITZO/0.3 M IGZO DAL TFT has the highest saturation mobility. This is due to channel defect such as pores and pin-holes. These defect sites were created during deposition process by solvent evaporation. Due to these defect sites, the 0.1 M ITZO/0.3 M IGZO DAL TFT shows the higher saturation mobility than that of DAL TFT with front channel of 0.2 M ITZO.

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Time Delay Focusing of Ultrasonic Array Transducers on a Defect Using the Concept of a Time Reversal Process

  • Jeong, Hyun-Jo;Lee, Jeong-Sik;Lee, Chung-Hoon;Jun, Ghi-Chan
    • Journal of the Korean Society for Nondestructive Testing
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    • v.29 no.6
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    • pp.550-556
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    • 2009
  • In an application of a time reversal(TR) focusing of array transducer on a defect inside the test material, we employ a new time delay focusing technique based the TR process. In order to realize this idea, a multi-channel ultrasonic system is constructed capable of applying necessary time delays to each channel. The TR-based focusing procedure first measures the backscattered signals after firing one of the array elements. A phase slope method is then used to determine the time-of-flights of the backscattered signals received by all elements of the array. These time delays are used to adjust the time of excitation of the elements for transmission focusing on the defect. In addition to the TR focusing, the classical phased array focusing is also considered for comparison. Experimental results show that the TR-based time delay focusing produces much stronger backscattered signals than the phased array focusing, demonstrating the enhanced capability of the TR focusing.

Wavelet Transform Based Defect Detection for PCB Inspection Machines (PCB 검사기를 위한 웨이블릿 변환 기반의 결함 검출 방법)

  • Youn, Seung-Geun;Kim, Young-Gyu;Park, Tae-Hyung
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.10
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    • pp.1508-1515
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    • 2017
  • This paper proposes the defect detection method for automatic inspection machines in printed circuit boards (PCBs) manufacturing system. The defects of PCB such as open, short, pin hole and scratch can be detected by comparing the standard image and the target image. The standard image is obtained from CAD file such as ODB++ format, and the target image is obtained by arranging, filtering and binarization of captured PCB image. Since the PCB size is too large and image resolution is too high, the image processing requires a lot of memory and computational time. The wavelet transform is applied to compress the standard and target images, which results in reducing the memory and computational time. To increase the inspection accuracy, we utilize the he HH-domain as well as LL-domain of the transformed images. Experimental results are finally presented to show the performance improvement of the proposed method.

Effect of Shrinkage Defect on Fracture Impact Energy of A356 Cast Aluminum Alloy (A356 알루미늄 합금의 파단 충격에너지에 대한 수축공결함의 영향)

  • Chul, Hwang-Seong;Kwak, Si-Young
    • Journal of Korea Foundry Society
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    • v.34 no.1
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    • pp.22-26
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    • 2014
  • Internal defects, such as shrinkage during casting, cause stress concentrations and initiate cracking. Therefore, it is important to understand the effects of internal defects on the mechanical properties including the impact behavior. This study evaluates the effects of internal casting defects on the impact performance of A356 Al-alloy castings. The internal shrinkage defects in the casting impact specimen are scanned using an industrial Computed Tomography (CT) scanner, and drop impact tests are performed with varing impact velocities on the A356 casting aluminium specimen ($10mm{\times}10mm$ section area) in order to locate the fracture energy under an impact load. The specimens with defects with a diameter less than 0.35 mm exhibit equivalent fracture impact energies of approximately 32 J and those with a 1.7 mm diameter defect reduced the fracture impact energy by 35%.

Measurement Mothod for Internal Defect of Pipe by Using Phase Shifting Real-Time Holographic Interferometry (위상이동 실시간 홀로그래픽 간섭법을 이용한 파이프의 내부결함 측정법)

  • Kang, Young-June;Moon, Sang-Joon
    • Journal of the Korean Society for Precision Engineering
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    • v.13 no.2
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    • pp.68-75
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    • 1996
  • More accurate inspection method for facilities of nuclear power plants is required to guarantee the continuous and stable energy supply. The portion of inspection for pipes and pressure vessels is relatively big in the power plants. Conventional inspection methods using ultrasonic wave, x-ray and eddy current for nondestructive testing in nuclear power plants have been performed as the method of contact with objects to be inspected. With this reason these methods have been taken relatively much time, money and manpower. And the area to be inspected is limited by the location of probe or film. These difficulties make the inspection into a time-consuming work. We propose an optical defect detection method using phase shifting realtime holographic interferometry. This method has an advantage that the inspection can be performed at a time for relatively wide area illuminated by the laser beam, a coherent light source and can help an inspector recognize not only defects but also the high stressed areas. In this paper we show that the quantitative measurement using holographic interferometry and image processing for defect in pressure vessels is possible.

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Development of Defect Inspection System for PDP ITO Patterned Glass

  • Song Jun-Yeob;Park Hwa-Young;Kim Hyun-Jong;Jung Yeon-Wook
    • International Journal of Precision Engineering and Manufacturing
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    • v.7 no.3
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    • pp.18-23
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    • 2006
  • The formation degree of sustain (ITO pattern) determines the quality of a PDP (Plasma Display Panel). Thus, in the present study, we attempt to detect 100% of the defects that are larger than $30{\mu}m$. Currently, the inspection method in the PDP manufacturing process is dependent upon the naked eye or a microscope in off-line mode. In this study, a prototype inspection system for PDP ITO patterned glass is developed. The developed system, which is based on a line-scan mechanism, obtains information on the defects and sorts the defects by type automatically. The developed inspection system adopts a multi-vision method using slit-beam formation for minimum inspection time and the detection algorithm is embodied in the detection ability. Characteristic defects such as pin holes, substances, and protrusions are extracted using the blob analysis method. Defects such as open, short, spots and others are distinguished by the line type inspection algorithm. It was experimentally verified that the developed inspection system can detect defects with reliability of up to 95% in about 60 seconds for the 42-inch PDP panel.

A Study on Inspection Technology of PDP ITO Defect (PDP ITO 결함 검출기술에 관한 연구)

  • 송준엽;박화영;정연욱;김현종
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.191-195
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    • 2003
  • The formation degree of sustain (ITO pattern) decides quality of PDP (plasma display panel). For this reason. it makes efforts in search defects more than 30 ${\mu}{\textrm}{m}$. Now, the existing inspection process is dependent upon naked eye or SEM equipment in off-line PDP manufacturing process. In this study developed prototype inspection system of PDP ITO glass. This system creates information that detects and sorts kind of defect automatically. Design ed inspection technology adopts line-scan method by slip-beam formation for the minimum of inspection time and image processing algorithm is embodied in detection ability of developed system. Designed algorithm had to make good use of kernel matrix which draws up an approach to geometry. A characteristic of area-shaped defects, as pin hole, substance, protrusion et al, are extracted from blob analysis method. Defects, as open, short, spots, et al, are distinguished by line type inspection algorithm. In experiment results, we could have ensured ability of inspection that can be detected with reliability of up to 95% in about 60 seconds

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