• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.11
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• pp.1-10
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• 1998

The advent of deep submicron technologies in the age of portable electronic systems creates a moving target for CAB algorithms, which now need to reduce power as well as delay and area in the existing design methodology. This paper presents a resynthesis algorithm for logic decomposition on mapped circuits. The existing algorithm uses a Huffman encoding, but does not consider glitches and effects on logic depth. The proposed algorithm is to generalize the Huffman encoding algorithm to minimize the switching activity of non-critical subcircuits and to preserve a given logic depth. We show how to obtain a transition-optimum binary tree decomposition for AND tree with zero gate delay. The algorithm is tested using SIS (logic synthesizer) and Level-Map (LUT-based FPGA lower power technology mapper) and shows 58%, 8% reductions on power consumptions, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.9
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• pp.19-27
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• 2002

Characteristics of interconnect lines considering underlayer geometries of a silicon substrate and crossing metal lines are experimentally analyzed through elaborately devised patterns. In this work, test patterns for transmission lines having several kinds of underlayer geometries were devised, and the signal characteristics and responses are measured by S-parameter and time domain reflection meter (TDR). The patterns were designed and fabricated with a deep-submicron CMOS DRAM technology having 1 Tungsten and 2 Aluminum metals. From the analysis of measured results on the patterns, it is founded that the effects of underlayter line structures on line parameters (especially line capacitance and resistance) and signal distortions occurred from them cannot be negligible. The results provide useful and insightful understanding in the skew balance of package leads and global signal lines such as high-speed clock and data lines.

• Journal of IKEEE
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• v.15 no.4
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• pp.330-338
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• 2011

In this paper, a current-mode buck-boost converter using Multiple switching devices is presented. The efficiency of the proposed converter is higher than that of conventional buck-boost converter. In order to improve the power efficiency at the high current level, the proposed converter is controlled with PWM(pulse width modulation) method. The converter has maximum output current 300mA, input voltage 3.3V, output voltage from 700mV to 12V, 1.5MHz oscillation frequency, and maximum efficiency 90%. Moreover, this paper proposes watchdog circuits in order to ensure the reliability and to improve the performance of dc-dc converters. An electrostatic discharge(ESD) protection circuit for deep submicron CMOS technology is presented. The proposed circuit has low triggering voltage using gate-substrate biasing techniques. Simulated result shows that the proposed ESD protection circuit has lower triggering voltage(4.1V) than that of conventional ggNMOS(8.2V).

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.293-296
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• 2012

SOC test methodology in ultra deep submicron (UDSM) technology with reasonable test time and cost has begun to satisfy high quality and reliability of the product. A novel hierarchical test architecture using IEEE standard 1149.1, 1149.7 and 1500 compliant facilities is proposed for the purpose of supporting flexible test environment to ensure SOC test methodology. Each embedded core in a system-on- a-chip (SOC) is controlled by test access ports (TAP) and TAP controller of IEEE standard 1149.1 as well as tested using IEEE standard 1500. An SOC device including TAPed cores is hierarchically organized by IEEE standard 1149.7 in wafer and chip level. As a result, it is possible to select/deselect all cores embedded in an SOC flexibly and reduce test cost dramatically using star scan topology.

• Proceedings of the KIEE Conference
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• 2003.11b
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• pp.67-70
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• 2003

In this paper the main topologies of one-bit full adders, including the most interesting of those recently proposed, are analyzed and compared for speed, power consumption, and power-delay product. The comparison has been performed on circuits, optimized transistor dimension to minimize power-delay product. The investigation has been carried out with properly defined simulation runs on a Cadence environment using a 0.25-${\mu}m$ process, also including the parasitics derived from layout. Performance has been also compared for different supply voltage values. Thus design guidelines have been derived to select the most suitable topology for the design features required. This paper also proposes a novel figure of merit to realistically compare n-bit adders implemented as a chain of one-bit full adders. The results differ from those previously published both for the more realistic simulations carried out and the more appropriate figure of merit used. They show that, except for short chains of blocks or for cases where minimum power consumption is desired, topologies with only pass transistors or transmission gates are not attractive.

• ETRI Journal
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• v.33 no.1
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• pp.50-59
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• 2011

In the current very deep submicron technology era, fault tolerant mechanisms perform an essential function to cope with the effects of soft errors. To evaluate the effectiveness of the fault tolerant mechanism, reliability engineers use simulated fault injections using either saboteur modules or mutants in the simulation model. However, the two methods suffer from both inefficiency in the simulation mechanism and difficulties with the experimental setups. To overcome these inefficiencies, we propose the Verilog-based simulated fault injection (VFI) technique. VFI has the following advantages. First, modification of the design model is unnecessary. Second, the fault injection simulation procedure is simple and efficient. Third, various types of fault injection experiments can be performed. To evaluate the effectiveness of the proposed methodology, we developed a VFI environment using the ICARUS Verilog Simulator. From the experimental results, we were able to qualitatively evaluate the reliability of the target simulation models and to assess the effectiveness of the employed fault-tolerance mechanisms.

• Journal of Computing Science and Engineering
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• v.6 no.4
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• pp.257-266
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• 2012

This paper overviews clock design problems related to the circuit reliability in deep submicron design technology. The topics include the clock polarity assignment problem for reducing peak power/ground noise, clock mesh network design problem for tolerating clock delay variation, electromagnetic interference aware clock optimization problem, adjustable delay buffer allocation and assignment problem to support multiple voltage mode designs, and the state encoding problem for reducing peak current in sequential elements. The last topic belongs to finite state machine (FSM) design and is not directly related to the clock design, but it can be viewed that reducing noise at the sequential elements driven by clock signal is contained in the spectrum of reliable circuit design from the clock source down to sequential elements.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.653-657
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• 2015

A new paired gate-source voltage RF capacitance-voltage (C-V) method of extracting the effective channel length and parasitic capacitance using the intersection between two closely spaced linear regression lines of the gate capacitance versus gate length measured from S-parameters is proposed to remove errors from conventional C-V methods. Physically verified results are obtained at the gate-source voltage range where the slope of the gate capacitance versus gate-source voltage is maximized in the inversion region. The accuracy of this method is demonstrated by finding extracted value corresponding to the metallurgical channel length.

• Proceedings of the KIEE Conference
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• 2003.11b
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• pp.271-274
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• 2003

This paper presents a Built-in Current Sensor that detect defects in CMOS integrated circuits using the current testing technique. This scheme employs a cross-coupled connected PMOS transistors, it is used as a current comparator. Our proposed scheme is a negligible impart on the performance of the circuit undo. test (CUT). In addition, in the normal mode of the CUT not dissipation extra power, high speed detection time and applicable deep submicron process. The validity and effectiveness are verified through the HSPICE simulation on circuits with defects. The entire area of the test chip is $116{\times}65{\mu}m^2$. The BICS occupies only $41{\times}17{\mu}m^2$ of area in the test chip. The area overhead of a BICS versus the entire chip is about 9.2%. The chip was fabricated with Hynix $0.35{\mu}m$ 2-poly 4-metal N-well CMOS technology.