• Journal of the Korean Society for Precision Engineering
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• v.28 no.1
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• pp.24-30
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• 2011

PC-TEMs (Polycarbonate Track-Etched membranes) were micro-drilled for biomedical applications by ultrafast pulsed laser. The ablation and damage characteristics were studied on PE-TEMs by assuming porous thin membranes. The experiments were conducted in the range of 2.02 $J/cm^2$ and 8.07$J/cm^2$. The ablation threshold and damage threshold were found to be 2.56$J/cm^2$ and 1.14$J/cm^2$, respectively. While a conical shaped drilled holes was made in lower fluence region, straight shaped holes were drilled in higher fluence region. Nanoholes made the membrane as porous material and ablation characteristics for both bulk and thin film membranes were compared.

• Laser Solutions
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• v.11 no.4
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• pp.13-20
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• 2008

The damage threshold measurement of gold films is carried out with ultrashort-pulse laser. An enhanced two temperature model is developed to encounter the limitation of linear modeling during ultrashort pulse laser ablation. In which the electron heat capacity is calculated using a quantum mechanical approach based on a Fermi-Dirac distribution, temperature-dependent electron thermal conductivity valid beyond the Fermi temperature is adopted, and reflectivity and absorption coefficient are estimated by applying a temperature-dependent electron relaxation time. The predicted damage threshold using the proposed enhanced modelclosely agreed with experimental results, demonstrating the importance of considering transient thermal and optical properties in the modeling of ultrashort pulse laser ablation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.99-102
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• 1999

A mixture which was made from organic gel, glass powder and ceramic powder was masklessly etched for fabrication of barrier rib of PDP(Plasma Display Panel) by focused Ar$^{+}$ laser( λ =514 nm) and Nd:YAG(λ =532, 266 nm) laser irradiation at the atmosphere. The depth of the etched grooves increases with increasing a laser fluence and decreasing a scan speed. Using second harmonic of Nd:YAG laser, the threshold laser fluence was 6.5 mJ/$\textrm{cm}^2$ for the sample of PDP barrier rib softened at 12$0^{\circ}C$. The thickness of 130 ${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5 J/$\textrm{cm}^2$....

• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3334-3341
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• 2023

We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 × 10⁹ to 1.82 × 10¹³ n/cm². Electrical characteristics of the IGBT device such as I-V, forward voltage drop and additionally switching characteristics of turn-on and -off were measured. As the neutron fluence increased, the device's threshold voltage decreased, the forward voltage drop increased significantly, and the turn-on and turn-off time became faster. In particular, the delay time of turn-on switching was improved by about 35% to a maximum of about 39.68 ns, and that of turn-off switching was also reduced by about 40%-84.89 ns, showing a faster switching.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1849-1851
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• 1999

The PDP(Plasma Display Panel) barrier rib was fabricated by focused $Ar^+$ laser ($\lambda$=514nm) and Nd:YAG($\lambda$=532, 266 nm) laser irradiation. The depth of the etched groove increases with increasing a laser fluence. and decreasing a scan speed. Using the second harmonic of the Nd:YAG laser, the threshold laser fluence was $6.5mJ/cm^2$ for the sample of PDP barrier rib dried at $120^{\circ}C$. The thickness of $150{\mu}m$ of the sample on the glass was etched without any damage on the glass substrate by fluence of $19.5J/cm^2$. The barrier rib sample on hot plate was etched by Nd:YAG laser(532 nm) as increasing a temperature of the sample. In this case, the etch rate was $95{\mu}m/s$, $190{\mu}m/s$ at room temperature, $175^{\circ}C$ respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.526-532
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• 2000

The paste on the glass or fabrication of the PDP(Plasma Display Panel) barrier rib was selectively etched using focused A $r_{+}$ laser(λ=514 nm) and Nd:YAG(λ=532, 266 nm) laser irradiation. The depth of the etched grooves increase with increasing a laser fluence and decreasing a laser beam scan speed. Using second harmonic of Nd:YAG laser(532 nm) the etching threshold laser fluence was 6.5 mJ/c $m^2$ for the sample of PDP barrier rib. The thickness of 180 ${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5J/c $m^2$beam scan speed of 20${\mu}{\textrm}{m}$ /s. In order to increase the etch rate of the barrier rib material barrier rib samples heated by a resistive heater during laser irradiation. The heated sample has many defects and becomes to be fragile. This imperfection of the structure compared to the sample without heat treatment allows the effective etching by the focused laser beam. The etch rates were 65${\mu}{\textrm}{m}$/s and 270 ${\mu}{\textrm}{m}$/s at room temperature and 20$0^{\circ}C$, respectively.y.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.9
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• pp.1351-1358
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• 2017

In this work, we investigated radiation hardness of GaN-based transistors which are strong candidates for next-generation power electronics. Field effect transistors with three types of gate structures including metal Schottky gate, recessed gate, and p-AlGaN layer gate were fabricated on AlGaN/GaN heterostructure on Si substrate. The devices were irradiated with energetic protons and alpha-particles. The irradiated transistors exhibited the reduction of on-current and the shift of threshold voltage which were attributed to displacement damage by incident energetic particles at high fluence. However, FET operation was still maintained and leakage characteristics were not degraded, suggesting that GaN-based FETs possess high potential for radiation-hardened electronics.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.886-888
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• 1998

By irradiating photoresist on Si or glass with $Ar^+$ (${\lambda}$=514 nm, CW) and Nd:YAG (${\lambda}$=266 and 532nm, pulse) laser beam, the photoresist was etched masklessly in air. Using a fourth harmonic Nd:YAG laser beam, the etching threshold of energy fluence was $25\;J/cm^2$ and the damage of substrate was appeared over $40\;J/cm^2$.