• Journal of Advanced Marine Engineering and Technology
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• 제37권3호
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• pp.260-265
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• 2013

Impressed current cathodic protection (ICCP) system is one of the most promising corrosion protection methods. The Effect of ICCP system can be changed at diverse conditions. Particularly, temperature and relative humidity plays a crucial role in CP (Cathodic Protection) effect. Thus, in this study, the influence of temperature and relative humidity on concrete specimens was investigated. Specimens were concrete slab type with a base of $400mm{\times}400mm$ and height of 70mm. To enhance the effect of CP system, seawater was used as an electrolyte. Used anode for ICCP system was mixed metal oxide (MMO) titanium. Test factors were natural potential, CP potential, CP current, and 4-hour depolarization potential. From this study, it could be confirm that CP potential and current were highly influenced by temperature and relative humidity.

• ETRI Journal
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• 제17권4호
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• pp.1-12
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• 1996

A novel body-tied silicon-on-insulator(SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such as kink phenomena on the drain current curves, single-transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current ($I_{DS}-V_{DS}$) curves, substrate resistance effect on the $I_{DS}-V_{DS}$ curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high-speed and low-voltage VLSI circuits.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1268-1270
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• 1995

A method using photoelectric effect of a single-mode optical fiber, with a 632.8nm He-Ne laser, has been developed for the simultaneous measurment of current and voltage. The Magnetic stress for the current and the piezoelectric effect for voltage are utilized. It is found that the detector output voltage is proportional to the square of the applied current and the frequency of the output is twice of that of the applied current.

• 산업기술연구
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• 제17권
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• pp.277-289
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• 1997

The numerical model for prediction of longshore current with set-up/down effect on a plane beach is developed using the longshore component of the depth-integrated momentum balance equation. To predict the longshore current, the wave height model should first be formulated because the longshore current depends on the wave height directly. Two wave model, regular wave model and random wave model, are developed based on the energy flux balance equation. Also, the numerical model estimating the set-up inside the shoreline is developed using both the on-offshore momentum equation and the moving boundary technique. The numerical models are verified by the analytical solution, and compared with laboratory data. It is found from the comparison that developed models may be predicted accurately the longshore current with set-up/down effect on a plane beach.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.625-629
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• 1998

So far a single-axis controlled repulsive type magnetic bearing system have been designed and fabricated in our laboratory employing the repulsive forces operating between the stator and rotor permanent magnet for levitation. The radial axis is uncontrolled passive one. The higher speed of operation is limited due to the vibration along the uncontrolled axis and the increase of control current due to eddy current interference. This paper will discuss a detailed modeling of the repulsive type magnetic bearing system for five axis control including the eddy current effect and the method of reduction of eddy current effect. Simulation results using Matlab will be presented.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권2호
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• pp.116-119
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• 2000

A hybrid SOI bipolar-mode field effect transistor (BMFET) is proposed to improve the current gain. The device characteristics are analyzed and verified numerically for BMFET mode, DMOS mode, and hybrid mode by MEDICI simulation. The proposed SOI BMFET exhibits 30 times larger current gain in hybrid-mode operation by connecting DMOS gate to the p+ gate of BMFET structure as compared with the conventional structure without sacrifice of breakdown voltage and leakage current characteristics. This is due to the DMOS-gate-induced hybrid effect that lowers the barrier of p-body and reduces the charge in p-body.

• Current Applied Physics
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• 제18권11호
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• pp.1415-1421
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• 2018

Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermediate silver source electrode has been demonstrated. The VOFET exhibits a high leakage current that induces an inversion polarity of its transistor behavior. Interestingly, a well-defined saturation current was observed in the linear scale of transfer characteristic. The VOFET operated with high-current density > $280mA/cm^2$ at $V_d=5V$. Overview potential of the fabricated device in display application is also presented. This preliminary work does open-up a new direction in VOFET fabrication and their application.

• International Journal of Safety
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• 제5권1호
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• pp.1-4
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• 2006

The safety performance of the current collection system is evaluated by conducting a test run in which accelerometer and load cell signals are analyzed. It has been found that the current collection performance is strongly influenced by the train speed, with the major frequency components arising from the train traversing the span spacing and the 8.5 Hz component originating from the panhead resonance. The train acceleration is found to have significant influence on the span passing frequency but negligible effect on the resonant response.

• 대한통합의학회지
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• 제6권2호
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• pp.117-123
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• 2018

Purpose : The purpose of this study was to investigate the effect of increased brain activity on the muscle endurance and the effect of brain activation through the combination of transcranial direct current stimulation and aerobic exercise on elderly woman. Methods : To investigate the effect of the muscle endurance on right leg, muscle endurance was evaluated by measuring the surface EMG of the muscles of the rectus femoris, biceps femoris, tibialis anterior, and gastrocnemius muscle. Results : There was a significant difference in the pre and post comparisons of muscle endurance on rectus femoris, biceps femoris, tibialis anterior muscle (p<.05). Difference of Combination of transcranial direct current stimulation and aerobic exercise group median frequency was smaller than control group (p<.05). There was not a significant difference in the pre and post comparisons of muscle endurance on biceps femoris, and gastrocnemius muscle. Difference of Combination of transcranial direct current stimulation and aerobic exercise group median frequency was showed a similar pattern. Conclusion : Through these results, It was found that increasing the brain activity by the transcranial direct current stimulation improves the exercise capacity on the elderly women. Combination of transcranial direct current stimulation and aerobic exercise maybe applied as an effective treatment for improving muscular endurance.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권5호
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• pp.516-521
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• 2013

This paper investigates the two dominant but intertwined current blocking mechanisms of Switching and Kirk Effect in pure ternary InAlAs/InGaAs/InAlAs Double Heterojunction Bipolar Transistors (DHBTs). Molecular Beam Epitaxy (MBE) grown, lattice-matched samples have been investigated giving substantial experimental results and theoretical reasoning to explain the interplay between these two effects as the current density is increased up to and beyond the theoretical Kirk Effect limit for devices of emitter areas varying from $20{\times}20{\mu}m^2$ to $1{\times}5{\mu}m^2$. Pure ternary InAlAs/InGaAs/InAlAs DHBTs are ideally suited for such investigations because, unless corrective measures are taken, these devices suffer from appreciable current blocking effect due to their large conduction band discontinuity of 0.5 eV and thus facilitating the observation of the two different physical phenomena. This enhanced understanding of the interplay between the Kirk and Switching effect makes the DHBT device design and optimization process more effective and efficient.