• 공업화학
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• 제8권3호
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• pp.489-501
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• 1997

일정한 전류하에서 내방사선성이 우수한 2-vinylnaphthalene(2-VN)과 methylmethacrylate(MMA)의 전기중합을 탄소섬유 표면 위에서 실시하였다. 단량체의 용해도 증대를 위해 N,N-dimethylformamide(DMF)를 용매로 사용하고, 질산나트륨을 전해질로 하여 전기중합을 실시하였다. 탄소섬유-2VN/MMA의 프리프레그 제조는 1:1 비율의 공단량체 용액 조성하에서 실시되었다. 본 전기중합 실험에서는 전류 밀도, 공단량체 농도, 전해질 농도와 반응시간에 따라 탄소섬유 표면에서 얻어지는 수율을 열중량분석기(TGA)로 측정하였다. 600~800mA/g 전류밀도에서 50wt%의 최대 수율을 얻을 수 있었으며, 800mA/g 이상에서는 수율이 급격히 감소하였다. 농도에 따라 수율이 증가하였지만 전해질 농도에는 영향이 없었다. 초기반응시간 약 30분 동안에 20wt%의 빠른 수율증가가 관찰되었다. 최대 수율을 얻을 수 있는 최적 조건하에서 제조된 프리프레그를 이용하여 탄소섬유 복합재료를 제조하였으며 $^{60}Co$ $\gamma$-ray 조사 전후의 표면형태학적 변화를 통해 내방사선성을 조사하였다.

• 한국광학회지
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• 제14권3호
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• pp.286-291
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• 2003

광대역 이득 특성을 얻기 위한 InGaAsP-InP 응력보상 비대칭 다중 양자우물(Asymmetric Multiple Quantum Well, AMQW) 구조를 성장하고, Ridge Waveguide Laser Diodes(RWG-LDs)를 제작하였다. 제작 후 소자의 동작변수와 모드 이득을 측정하였으며, 얻어진 결과를 비교, 분석하였다. 외부 공진기형 구조에서 넓고 평탄한 이득특성을 얻기 위해 한쪽 단면에 Anti-Reflection(AR) 코팅을 수행하여 AR coated AMQW RWG LD의 이득특성을 분석하였다.

• 한국정보통신학회논문지
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• 제25권6호
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• pp.853-856
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• 2021

In this paper, a low noise amplifier having high gain and low noise by using input and inter stage matching circuits has been designed. A current-reused two-stage common-source topology is adopted, which can obtain high gain and low power consumption. Deterioration of noise characteristics according to the source inductive degeneration matching is compensated by adopting additional matching circuits. Moreover trade-offs among noise, gain, linearity, impedance matching, and power dissipation have been considered. In this design, 0.18-mm CMOS process is employed for the simulation. The simulated results show that the designed low noise amplifier can provide high power gain and low noise characteristics.

• 한국표면공학회지
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• 제30권1호
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• pp.44-56
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• 1997

Influence of electrochemical etching conditions on capacitance gain of aluminium electrolytic on capacitor foil has been investigated by etching cubic textured high purity aluminum foil in dilute hydrochloric acid. Uniformly distributed etch pit tunnels on aluminum surface have been obtained by pretreatment aluminium foil in 10% NaOH solution for 5 minutes followed by electrochemical etching. Electrostatic capacitance of etched aluminium foil anodized to high voltage increased with the increase of current density, total charge, temperature and concentration of electrolyte up to maximum CV-value and then deceased. Election optical observation of the etched foil revealed that the density of etch of etch pits increased with the increase of current density and concentration of electrolyte. this increase of etch pit density enlarged of the increase of capacitance. However, abnormal high current density and high electrolyte concentration induced the local dissolution of the foil surface which resulted the decrease of foil capacitance.

• 대한전자공학회논문지
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• 제16권2호
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• pp.7-14
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• 1979

Integrated Injecton Logic의 설계를 npn transistor 의 상향전류증폭율, βu 을 중심으로 하여 검토하였다. I2L 기본회로의 DC, AC특성과 npn transistor의 베이스 전류성분을 측정하기 위하여 test structure를 제작하였으며 또한 I2L T flip-flop도 설rP, 제작하였다. 제작된 test structure의 특성은 βe가 10, speed-power product가 2.6p.J/gate, 최소 전달지연 시간이 36 nsec 였으며 T flip-flop은 3.5 MHz 까지 동작하였다.

• 전기전자학회논문지
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• 제16권2호
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• pp.116-120
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• 2012

본 논문에서는 밀리미터파 응용에 사용 가능한 우수한 성능의 50 nm InGaAs/InAlAs/GaAs metamorphic HEMT를 구현하였다. 게이트 길이가 50 nm이며 단위 게이트 폭이 30 ${\mu}m$인 2개의 게이트를 가지고 있는 MHEMT의 측정결과, 740 mA/mm의 드레인 포화 전류밀도와 1.02 S/mm의 상호전달 전도도를 얻었으며 전류이득차단주파수와 최대공진주파수는 각각 430 GHz와 406 GHz의 특성을 나타내었다.

• Journal of Power Electronics
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• 제17권3호
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• pp.621-631
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• 2017

A KY converter integrated with a conventional synchronously rectified (SR) boost converter and a coupled inductor is presented in this paper. This improved KY converter has the following advantages: 1) the two converters use common switches; 2) the voltage gain of the KY converter can be improved due to the integration of a boost converter and a coupled inductor; 3) the leakage inductance of the coupled inductor is utilized to achieve zero voltage switching (ZVS); 4) the current stress on the charge pump capacitors and the decreasing rate of the diode current can be limited due to the use of the coupled inductor; and 5) the output current is non-pulsating. Moreover, the active switches are driven by using one half-bridge gate driver. Thus, no isolated driver is needed. Finally, the operating principle and analysis of the proposed converter are given to verify the effectiveness of the proposed converter.

• 대한전자공학회논문지SD
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• 제48권12호
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• pp.82-90
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• 2011

저전력 전류-모드 신호처리를 위해 새로운 AB급 전류 감산기와 이를 이용한 노튼(Norton) 증폭기를 설계하였다. 전류 감산기는 트랜스리니어 셀(translinear cell), 2개의 전류 미러, 그리고 공통-이미터 증폭기로 구성되었다. 전류 감산의 원리는 트랜스리니어 셀로 입력되는 두 전류의 차가 전류 미러에 의해 얻어지고 이 전류는 공통-이미터 증폭기에 의해 ${\beta}$배 증폭되는 것이다. 노튼 증폭기는 설계한 AB급 전류 감산기와 광대역 전압 버퍼(buffer)로 구성되었다. 시뮬레이션 결과 전류 감산기는 $20{\Omega}$의 입력 저항, 50배의 전류 증폭도, $i_{IN1}$ > $i_{IN2}{\geq}4I_B$의 전류 입력 범위를 갖고 있다는 것을 확인하였다. 노튼 증폭기는 ${\pm}2.5V$ 공급전압에서 312MHz의 단위-이득 주파수, 130dB의 트랜스래지스턴스(transresistance), 4mW의 소비전력은 갖고 있다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.675-681
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• 2016

A 41dB gain control range $6^{th}$-order band-pass receiver front-end (RFE) using CMOS switched frequency translated impedance (FTI) is presented in a 40 nm CMOS technology. The RFE consists of a frequency tunable RF band-pass filter (BPF), IQ gm cells, and IQ TIAs. The RF BPF has wide gain control range preserving constant filter Q and pass band flatness due to proposed pre-distortion scheme. Also, the RF filter using CMOS switches in FTI blocks shows low clock leakage to signal nodes, and results in low common mode noise and stable operation. The baseband IQ signals are generated by combining baseband Gm cells which receives 8-phase signal outputs down-converted at last stage of FTIs in the RF BPF. The measured results of the RFE show 36.4 dB gain and 6.3 dB NF at maximum gain mode. The pass-band IIP3 and out-band IIP3@20 MHz offset are -10 dBm and +12.6 dBm at maximum gain mode, and +14 dBm and +20.5 dBm at minimum gain mode, respectively. With a 1.2 V power supply, the current consumption of the overall RFE is 40 mA at 500 MHz carrier frequency.

• 제어로봇시스템학회논문지
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• 제14권1호
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• pp.95-103
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• 2008

This paper deals with the problem of autolanding for aircraft under windshear environment for which the landing trajectory is given. It is well known that the landing maneuver in windshear turbulence is very dangerous and hard for the pilot to control because windshear is unpredictable in when and where it happens and its aerodynamic characteristics are complicated. In order to accomplish satisfactory autolanding maneuver in this environment, we propose a gain-scheduled controller. The proposed controller consists of three parts: PID controller, called baseline controller, which is designed to satisfy requirements of stability and performance without considering windshear, gain scheduler based on fuzzy logic, and safety decision logic, which decides if the current autolanding maneuver needs to be aborted or not. The controller is applied to a 6-DOF simulation model of the associated airplane in order to illustrate the effectiveness of the proposed control algorithm. It is noted that a cross wind in the lateral direction is included to the simulation model. From the simulation results it is observed that the proposed gain scheduled controller shows superior performance than the case of controller without gain scheduling even in severe downburst and tailwind region of windshear. In addition, touchdown along centerline of the runway is more precise for the proposed controller than for the controller without gain scheduling in the cross wind and the tailwind.