• Title/Summary/Keyword: current gain

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A study of class AB CMOS current conveyors (AB급 CMOS 전류 콘베이어(CCII)에 관한 연구)

  • 차형우;김종필
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.34C no.10
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    • pp.19-26
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    • 1997
  • Novel class AB CMOS second-generation current conveyors (CCII) using 0.6.mu.m n-well CMOS process for high-frequency current-mode signal processing were developed. The CCII for low power operation consists of a class AB push-pull stage for the current input, a complementary source follower for the voltage input, and a cascode current mirror for the current output. In this architecture, the two input stages are coupled by current mirrors to reduce the current input impedance. Measurements of the fabricated CCII show that the current input impedance is 875.ohm. and the bandwidth of flat gain when used as a voltage amplifier extends beyond 4MHz. The power dissipation is 1.25mW and the active chip area is 0.2*0.15[mm$\^$2/].

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Gate Leakage Current of Power GaAs MESFET's at High Temperature

  • Won Chang-sub;Ahn Hyungkeun;Han Deuk-Young
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.44-46
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    • 2001
  • Increase of gate leakage current causes decrease of gain and increase of noise. In this paper, gate leakage current of GaAs MESEFTs' has been traced with different temperatures from $27^{\circ}C\;to\;350^{\circ}C$ to obtain the zero voltage saturation current $J_s$ which is critical to the temperature dependency of total current. From the results, thermal leakage current coefficient has been proposed to compensate for the total current due to the thermionic emission, tunneling, generation and/or hole injection.

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Effect of Output-conductance on Current-gain Cut-off frequency in In0.8Ga0.2As High-Electron-mobility Transistors (In0.8Ga0.2As HEMT 소자에서 Output-conductance가 차단 주파수에 미치는 영향에 대한 연구)

  • Rho, Tae-Beom;Kim, Dae-Hyun
    • Journal of Sensor Science and Technology
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    • v.29 no.5
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    • pp.324-327
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    • 2020
  • The impact of output conductance (go) on the short-circuit current-gain cut-off frequency (fT) in In0.8Ga0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of fT in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for fT in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with Lg from 260 to 25 nm. In long-channel devices, the effect of the intrinsic output conductance (goi) on fT was negligible. This was because, from the simplified SSM perspective, three model parameters, such as gm_ext, Cgs_ext and Cgd_ext, were weakly dependent on goi. However, in short-channel devices, goi was found to play a significant role in degrading fT as Lg was scaled down. The increase in goi in short-channel devices caused a considerable reduction in gm_ext and an overall increase in the total extrinsic gate capacitance, yielding a decrease in fT with goi. Finally, the results were used to infer how fT is influenced by goi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down Lg.

A 1.2V 90dB CIFB Sigma-Delta Analog Modulator for Low-power Sensor Interface (저전력 센서 인터페이스를 위한 1.2V 90dB CIFB 시그마-델타 아날로그 모듈레이터)

  • Park, Jin-Woo;Jang, Young-Chan
    • Journal of IKEEE
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    • v.22 no.3
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    • pp.786-792
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    • 2018
  • A third-order sigma-delta modulator with the architecture of cascade of integrator feedback (CIFB) is proposed for an analog-digital converter used in low-power sensor interfaces. It consists of three switched-capacitor integrators using a gain-enhanced current-mirror-based amplifier, a single-bit comparator, and a non-overlapped clock generator. The proposed sigma-delta analog modulator with over-sampling ratio of 160 and maximum SNR of 90.45 dB is implemented using $0.11-{\mu}m$ CMOS process with 1.2-V supply voltage. The area and power consumption of the sigma-delta analog modulator are $0.145mm^2$ and $341{\mu}W$, respectively.

State based Context Awareness Method for Non-Player Character (자율 캐릭터를 위한 상태기반 상황인지 기법)

  • Kim, Hyung-Il
    • Journal of Korea Game Society
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    • v.14 no.1
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    • pp.93-102
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    • 2014
  • The non-player character(NPC) either cooperates with the player character to proceed the game or fight against the game player. This paper proposes the context awareness method for the natural action control of the same NPC. The context awareness method analyzes the context information of the NPC that can be utilized in the current status and creates the actions which suit the current context automatically. The context awareness method analyzes the information value of the context elements of the NPC which occur in the current context and creates natural actions of the character by utilizing the analyzed context element information. In this experiment, average performance improved by 39% and by 8% in the context awareness method as compared to the rule-based method and information gain method, respectively.

A Transformer-less Boost Converter with High Gain and Low Current Ripple for Fuel Cell Application (연료전지 응용을 위한 높은 승압비와 낮은 전류리플을 갖는 무변압기형 부스트 컨버터)

  • Yang, Jin-Young;Park, Chan-Ki;Choi, Se-Wan;Nam, Seok-Woo
    • The Transactions of the Korean Institute of Power Electronics
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    • v.13 no.2
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    • pp.79-87
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    • 2008
  • Boost Converters have been used to step up and regulate the low and widely varing voltage from the fuel cell. A transformer-less boost converter which does not have lossy, bulky, and costly high frequency transformers has an advantage in applications where galvanic isolation is not required. In this paper a new transformer-less boost converter is proposed. The proposed boost converter has practically usuable 6 to 8 times of step up ratio and is suitable for fuel cell applications due to very low input and output current ripples. The proposed converter is verified through the theorical analysis, simulation and experimental waveform.

Conceptual Change via Instruction based on PhET Simulation Visualizing Flow of Electric Charge for Science Gifted Students in Elementary School (전하이동을 시각화한 PhET 기반 수업을 통한 초등과학영재의 전류개념변화)

  • Lee, Jiwon;Shin, Eun-Jin;Kim, Jung Bog
    • Journal of Korean Elementary Science Education
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    • v.34 no.4
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    • pp.357-371
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    • 2015
  • Even after learning electric current, elementary school students have various non-scientific conceptions and difficulties. Because flow of charge is not visible. Also elementary school students do not learn theory but phenomena, so they cannot transfer theoretical perspective to new situation. In this research, we have designed instruction based on PhET simulation visualizing flow of electric charge and applied it to 37 science-gifted students in elementary school for measuring conceptual understanding. As a result, six out of the seven Hake gains of question set are high gain and just one is middle gain because the students have understood the flow pattern of the charge through circuit elements such as light bulbs, wire, as well as battery with PhET simulation and it gives a chance to create various questions spontaneously about electric current. Also they become able to do spontaneous mental simulation without PhET simulation about flow of charges. This research, suggest that developed materials using PhET simulation could be used as not only program for gifted students in elementary school, but also the electrical circuit section in an elementary science curriculum.

Transient Improvement Algorithm in Digital Images

  • Kwon, Ji-Yong;Chang, Joon-Young;Lee, Min-Seok;Kang, Moon-Gi
    • Proceedings of the Korean Society of Broadcast Engineers Conference
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    • 2010.07a
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    • pp.74-76
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    • 2010
  • Digital images or videos are used in modern digital devices. The resolution of HDTV in digital broadcasting system is higher than that of previous analog systems. Also, mobile phone with 3G can provide images as well as video streaming services in realtime. In these circumstances, the visual quality of images has become an important factor. We can make image clear by transient improvement process that reduces transient in edges. In this paper, we present an transient improvement algorithm. The proposed algorithm improves edges by making smooth edge to steep edge. Before performing transient improvement algorithm, edge detection algorithm should be operated. Laplacian operator is used in edge detection, and the absolute value of it is used to calculate gain value. Then, local maximum and minimum values are computed to discriminate current pixel value to raise up or pull down. Compensating value that gain value multiplies with the difference between maximum (or minimum) value and current pixel value adds (or subtracts) to current pixel value. That is, improved signal is generated by making the narrow transient of edge. The advantage of proposed algorithm is that it doesn't produce shooting problem like overshoot or undershoot.

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A Gm-C Filter using CMFF CMOS Inverter-type OTA (CMFF CMOS 인버터 타입 OTA를 이용한 Gm-C 필터 설계)

  • Choi, Moon-Ho;Kim, Yeong-Seuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.4
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    • pp.267-272
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    • 2010
  • In this paper, a Gm-C LPF utilizing common-mode feedforward (CMFF) CMOS inverter type operational transconductance amplifier (OTA) has been designed and verified by circuit simulations. The CMFF CMOS inverter OTA was optimized for wide input linearity and low current consumption using a standard 0.18 ${\mu}m$ CMOS process; gm of 100 ${\mu}S$ and current of 100 ${\mu}A$ at supplied voltage of 1.3 V. Using this optimized CMFF CMOS inverter type OTA, an elliptic 5th order Gm-C LPF for GPS specifications was designed. Gain and frequency tuning of the LPF was done by changing the internal supply voltages. The designed Gm-C LPF gave pass-band ripple of 1.6 dB, stop-band attenuation of 60.8 dB, current consumption of 0.60 mA at supply voltage of 1.2 V. The gain and frequency characteristics of designed Gm-C LPF was unchanged even though the input common-mode voltage is varied.