• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.957-962
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• 2003

The preparation of $Al_2$O$_3$-SiO$_2$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. for the preparation of thin, continuous $Al_2$O$_3$-SiO$_2$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_2$O$_3$-SiO$_2$ upon heating to 100$0^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.749-751
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• 2007

A buffer layer consisting of $SiO_x/Ta/Ti$ has been developed in order to overcome the adhesion and stress problems between poly-Si film and mica. Polycrystalline silicon thin film transistor was successfully fabricated on the mica and transferred to a flexible plastic substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.5-11
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• 2008

To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.190-190
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• 2003

현재 a-Si TFT는 평판 디스플레이 소자로서 주로 사용되고 있으나 점차 고속응답속도 특성, 고화질이 요구됨에 따라 높은 전계효과 이동도를 가진 poly-Si TFT로 대체하기 위한 연구가 진행되고 있으며 특히 poly-Si TFT를 상용 유리 기판에 적용하기 위해 비정질 실리콘의 저온 결정화에 대한 연구가 활발히 진행 되고 있다. 본 연구에서는 극박막의 Ni을 선택적으로 증착하여 전계 유도방향성 결정화 (Field Aided Lateral Crystallization : FALC) 공정을 이용하여 결정화를 진행하였으며 전계를 인가하지 않은 경우와 전계를 인가한 경우, 전계 세기에 따른 결정화에 대하여 비교하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1182-1184
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• 2006

A mica has been introduced as a new substrate material for the fabrication of the poly-Si TFTs. A poly-Si film is produced on the mica substrate at $550^{\circ}C$ by the nickel-induced crystallization and the poly-Si TFTs on the mica substrate are successfully fabricated for the first time.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.72-80
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• 2001

In this paper, we present a systematic method of extracting the input parameters of poly-Si TFT(Thin-Film Transistor) for Spice simulations. This method has been applied to two different types of poly-Si TFTs such as ELA (Excimer Laser Annealing) and SMC (Silicide Mediated Crystallization) with good fitting results to experimental data. Among the Spice circuit simulators, the PSpice has the GUI(graphic user interface) feature making the composition of complicated circuits easier. We added successfully the poly-Si TFT model of AIM-Spice to the PSpice simulator, and analyzed easily to compare the electrical characteristics of pixels without or with the line RC delay. In the comparative results, the ELA poly-Si TFT is superior to the SMC poly-Si TFT in the charging time and the kickback voltage for the TFT-LCD (Thin Film Transistor-Liquid Crystal Display).

• Journal of the Korean institute of surface engineering
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• v.43 no.1
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• pp.7-11
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• 2010

Solid phase crystallization (SPC) is a simple method in producing a polycrystalline phase by annealing amorphous silicon (a-Si) in a furnace environment. Main motivation of the crystallization technique is to fabricate low temperature polycrystalline silicon thin film transistors (LTPS-TFTs) on a thermally susceptible glass substrate. Studies on SPC have been naturally focused to the low temperature regime. Recently, fabrication of polycrystalline silicon (poly-Si) TFT circuits from a high temperature polycrystalline silicon process on steel foil substrates was reported. Solid phase crystallization of a-Si films proceeds by nucleation and growth. After nucleation polycrystalline phase is propagated via twin mediated growth mechanism. Elliptically shaped grains, therefore, contain intra-granular defects such as micro-twins. Both the intra-granular and the inter-granular defects reflect the crystallinity of SPC poly-Si. Crystallinity and SPC kinetics of high temperatures were compared to those of low temperatures using Raman analysis newly proposed in this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.632-635
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• 2001

Microcrystalline Si films have been deposited by using five W-wire filaments of 0.5 mm diameter for hot-wire chemical vapor deposition (HWCVD). We compared the HWCVD grown films with the film exposed to transformer couple plasma system for the modification of seed layer. W-wire filament temperature was maintained below 1600$^{\circ}C$ to avoid metal contamination by thermal evaporation at the filament. Deposition conditions were varied with H$_2$dilution ratio, with and without plasma treatment. From the Raman spectra analysis, we observed that the film crystallization was strongly influenced by the H$_2$dilution ratio and weakly depended on the distance between the wire and a substrate. We were able to achieve the crystalline volume fraction of about 70% with an SiH$_4$/H$_2$ratio of 1.3%, a wire temperature of 1514$^{\circ}C$, a substrate separation distance of 4cm, and a chamber pressure of 38 mTorr. We investigated the influence of ${\mu}$c-Si film properties by using a plasma treatment. This article also deals with the influence of the H$_2$dilution ratio in crystallization modification.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.210-214
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• 2002

The crystallization behavior of amorphous silicon (a-Si) film was investigated by using Cu-field aided lateral crystallization (Cu-FALC) process below $450^{\circ}C$. The lateral crystallization was induced from the Cu deposited region outside of pattern toward the Cu-free region inside of the pattern by applying an electric field during heat treatment. As expected, the lateral crystallization toward Cu-free region proceeded from negative toward positive electrode side. The occurrence of Cu-FALC phenomenon was interpreted in terms of dominant diffusing species in the reaction between Cu and Si. Even at the annealing temperature of $350^{\circ}C$, the large dendrite-shaped branches were formed in the crystallized region and the polarity in the lateral crystallization was clearly observed. Consequently, we could successfully crystallize the a-Si at the temperature as low as $350^{\circ}C$ by an electric field of 30 V/cm with fast crystallization velocity of 12 $\mu$m/h.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.05a
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• pp.114-114
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• 1998