• 한국진공학회지
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• 제4권S1호
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• pp.34-39
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• 1995

Various silicon films were prepared by thermal- and UV photo-CVD processes. The reactants were SiH4, Si2H6, SiH2F2, SIF4, and H2. Silicon films grown at temperatures below $500 ^{\circ}C$ were either amorphous or crystalline depending on the process conditions, and the growth rates ranged between 5 and $80\AA$min. Crystallinity of the film was improved even at $250^{\circ}C$ when the film was grown by photo-CVD using fluoro-silanes as the reactants. Analysis of the film by RBS, SIMS, XRD, and ex-situ IR indicated that substrate surface was contaminated by oxygen and other impurities when the reactants contained neither hydrogen nor fluoro-silnanes, but when fluoro-silanes were used as reactants the silicon film was highly crystalline.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.22-23
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• 2007

We tried to find the possibility of mono-crystalline silicon solar cell for photovoltaic concentrating system which is major cost portion for PV system using fresnel lens. With solar simulator and I-V curve tracer, we analyzed maximum output characteristics and measured the temperature of concentrated area using infrared camera. Because of temperature increase, there was no merit when concentrating. But at low radiant power, it showed more efficient operation. The combination of heat-sink technology and tracking system to our concentrating PV system would give better performance results.

• Current Photovoltaic Research
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• 제10권3호
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• pp.90-94
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• 2022

The screen-printing method is the most mature solar cell fabrication technology, which has the advantage of being faster and simpler process than other printing technology. A front metallization printed through screen printing influences the efficiency and manufacturing cost of solar cell. Recent technology development of crystalline silicon solar cell is proceeding to reduce the manufacturing cost while improving the efficiency. Therefore, screen printing requires process development to reduce a line width of an electrode and decrease shading area. In this paper, we will discuss the development trend and prospects of screen-printing metallization using metal paste, which is currently used in manufacturing commercial crystalline silicon solar cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제32회 학술대회 초록집
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• pp.44-44
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• 2007

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.128.1-128.1
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• 2011

In amorphous silicon and crystalline silicon(a-Si:H/c-Si) heterojuction solar cells, intrinsic hydrogenated amorphous silicon(a-Si:H) films play an important role to passivate the crystalline silicon wafer surfaces. We have studied the correlation between the surface passivation quality and nature of the Si-H bonding at the a-Si:H/c-Si interface. The samples were obtained by VHF-CVD under different deposition conditions. The passivation quality and analysis of all structures studied was performed by means of quasi steady state photoconductance(QSSPC) methods and fourier transform infrared spectrometer(FTIR) measurements respectively.

• 한국세라믹학회지
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• 제35권5호
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• pp.486-492
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• 1998

Silicon carbide (SiC) thin films were deposited on the porous silicon substrates by chemical vapour de-position(CVD) using MTS as a source material. The deposited films were ${\beta}$-SiC with poor crystallity con-firmed by XRD measurement. It was considered that the films showed the mixed characteistics of cry-stalline and amorphous SiC where amorphous SiC where amorphous SiC played a role of buffer layer in interface between as-dep films and Si substrate. The buffer layer reduced lattice mismatch to some extent the generally occurs when SiC films are deposited on Si. The low temperature (10K) PL (phtoluminescence) studies showed two broad bands with peaks at 600 and 720 for the films deposited at 1100$^{\circ}C$ The maximum PL peak of the crystalline SiC was observed at 600 nm and the amrophous SiC of 720 nm was also confirmed. PL peak due the amorphous SiC was smaller than that of the crystalline SiC, PL of porous Si might be disapperared due to densification during heat treatment.

• Current Photovoltaic Research
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• 제2권2호
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• pp.41-47
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• 2014

Extensive investigation on silicon based thin film reveals a wide range of film characteristics, from low optical gap to high optical gap, from amorphous to micro-crystalline silicon etc. Fabrication of single junction, tandem and triple junction solar cell with suitable materials, indicate that fabrication of solar cell of a relatively moderate efficiency is possible with a better light induced stability. Due to these investigations, various competing materials like wide band gap silicon carbide and silicon oxide, low band gap micro-crystalline silicon and silicon germanium etc were also prepared and applied to the solar cells. Such a multi-junction solar cell can be a technologically promising photo-voltaic device, as the external quantum efficiency of such a cell covers a wider spectral range.

• 한국진공학회지
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• 제16권3호
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• pp.161-166
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• 2007

태양광발전이란 태양에너지를 직접 전기 에너지로 변환시키는 것이다. 지난 5년 동안 태양광발전은 세계적으로 높은 성장률을 보여 왔다. 특히 2006년에는 30%, 이상의 성장을 가져왔으며 앞으로 20년 동안 평균 생산 성장률은 매년 27%-34%가 될 것으로 예상하고 있다. 현재까지는 태양광발전을 이용해 생산된 전력의 가격은 기존 전력발전의 가격보다 높지만 태양광 기술의 발전과 효율의 향상으로 점점 그 가격이 떨어지고 있다. 뿐만 아니라 태양전지용의 실리콘 기판의 대량생산은 점점 더 태양전지의 가격 저하를 가져오고 있다. 태양전지의 변화효율의 한계는 30%이다. 현재에는 결정질 실리콘 태양전지가 주를 이루고 있지만 미래에는 박막 실리콘 태양전지가 주도를 이룰 것이다. 2030년에는 박막 태양전지가 90%이상을 이루고 결정질 태양전지는 10% 이하로 떨어질 것을 예상하고 있다. 성균관대학교에서는 결정질 실리콘 태양전지의 저가화와 고효율화를 주 연구로 수행하고 있다. 현재 성균관대학교에서는 스크린 프린트를 이용해서 16% 이상의 다결정 실리콘 태양전지와 17% 이상의 단결정 실리콘 태양전지를 성공적으로 제작하였다. 제 1세대에서 다음 세대의 태양전지 발전의 과정은 새로운 접근법으로 확대되지만 여전히 실리콘이 지금까지 주된 재료로 쓰이고 있다. 2010년까지 이러한 기술들에 대한 격차는 여전히 있지만 태양광발전을 통한 전력생산의 가격은 60 cent/watt 정도로 예상하고 있다. 태양광발전은 청정에너지로서 재생불가능 하고 고갈되어가고 환경오염을 일으키는 다른 에너지와 비교하여 점점 대체에너지로서의 자리를 확립해 가고 있다.

• 한국진공학회지
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• 제19권2호
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• pp.114-120
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• 2010

일반적으로 결정질 실리콘 태양전지에서 표면에 텍스쳐링(texturing)하는 것은 알칼리 또는 산성 같은 화학용액을 사용하고 있다. 그러나 실리콘 부족으로 실리콘의 양의 감소로 인하여 웨이퍼 두께가 감소하고 있는 추세에 일반적으로 사용하고 있는 습식 텍스쳐링 방법에서 화학용액에 의한 많은 양의 실리콘이 소모되고 있어 웨이퍼의 파손이 심각한 문제에 직면하고 있다. 그리하여 습식 텍스쳐링 방법보다는 플라즈마로 텍스쳐링할 수 있는 건식 텍스쳐링 방법인 RIE (reactive ion etching) 기법이 대두되고 있다. 그리고 습식 텍스쳐링으로는 결정질 실리콘 태양전지의 반사율을 10% 이하로는 낮출 수가 없다. 다결정 실리콘 웨이퍼 표면에 텍스쳐링을 하기 위하여 125 mm 웨이퍼 144개를 수용할 수 있는 대규모 플라즈마 RIE 장비를 개발하였다. 반사율을 4% 이하로 낮추기 위하여 공정가스는 $Cl_2$, $SF_6$, $O_2$를 기반으로 RIE 텍스쳐링을 하였고 텍스쳐링의 모양은 공정가스, 공정시간, RF 주파수 등에 의해 조절이 가능하였다. 본 연구에서 RIE 공정을 통하여 16.1%의 변환효율을 얻었으며, RF 주파수가 텍스쳐링의 모양에 미치는 영향을 살펴보았다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 춘계학술대회
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• pp.295-298
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• 2007

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating(ARC) and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si ARC layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated with SEM. The formation of a nanoporous Si layer about 100nm thick on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.