• Title/Summary/Keyword: crystalline material

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Mechanochemical Synthesis of LaNiO3 Crystalline Phase from Mixture of La2O3sub> and NiO (La2O3의 메카노케미컬 합성에 의한 LaNiO3결정상 생성)

  • 김대영;김강언;이명교;정수태
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.8
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    • pp.681-687
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    • 2003
  • The syntheses of LaNiO$_3$Perovskite crystalline phase from mixtures of La$_2$O$_3$and NiO via it mechanochemical(used planetary mill) and a wet ball mill process were investigated. A single and stable LaNiO$_3$perovskite crystalline phase was successfully prepared by using a heat free mechanochemical process which produced a fine amorphous powder, while that phase was not formed in a wet ball mill process which needed heat treatment ranging from 500 to 150$0^{\circ}C$ and produced a coarse powder. It was shown that the LaNiO$_3$ceramics made of the mechanochemically synthesized powder possesed a good metallic characteristic.

Application Possibility of Mono-Crystalline Silicon Solar Cell for Photovoltaic Concentrating System (단결정 실리콘 태양전지의 집광형 시스템으로의 적용 가능성)

  • Kang, Kyung-Chan;Kang, Gi-Hwan;Yu, Gwon-Jong;Huh, Chang-Su
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.22-23
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    • 2007
  • We tried to find the possibility of mono-crystalline silicon solar cell for photovoltaic concentrating system which is major cost portion for PV system using fresnel lens. With solar simulator and I-V curve tracer, we analyzed maximum output characteristics and measured the temperature of concentrated area using infrared camera. Because of temperature increase, there was no merit when concentrating. But at low radiant power, it showed more efficient operation. The combination of heat-sink technology and tracking system to our concentrating PV system would give better performance results.

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Epitaxial Growth of ZnO Thin Films on (100) $LaAlO_3$ Substrate by Pulsed Laser Deposition (PLD를 이용한 (100) $LaAlO_3$ 기판위의 ZnO 에피택셜 박막 성장)

  • Cho, Dae-Hyung;Kim, Ji-Hong;Moon, Byung-Moo;Jo, Yeong-Deuk;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.256-256
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    • 2008
  • We report epitaxial growth of ZnO thin films on (100) single-crystalline $LaAlO_3$ (LAO) substrates using pulsed laser deposition (PLD) at different substrate temperatures (400~$800^{\circ}C$). The structural and electrical properties of the films have been investigated by means of X-ray diffraction (XRD), atomic force microscope (AFM), transmission line method (TLM). The poly-crystalline of $\alpha$- and c-axis oriented ZnO film was formed at lower deposition temperature ($T_s$) of $400^{\circ}C$. At higher $T_s$, however, the films exhibit single-crystalline of $\alpha$-axis orientation represented by ZnO[$\bar{1}11$ || LAO <001>. The electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for $\alpha$-axis oriented ZnO films.

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Texturing of Multi-crystalline Silicon Using Isotropic Etching Solution (등방성 에칭용액을 이용한 다결정 실리콘의 표면조직화)

  • Eum, Jung-Hyun;Choi, Kwan-Young;Nahm, Sahn;Choi, Kyoon
    • Journal of the Korean Ceramic Society
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    • v.46 no.6
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    • pp.685-688
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    • 2009
  • Surface Texturing is very important process for high cell efficiency in crystalline silicon solar cell. Anisotropic texturing with an alkali etchant was known not to be able to produce uniform surface morphology in multi-crystalline silicon (mc-Si), because of its different etching rate with random crystal orientation. In order to reduce surface reflectance of mc-Si wafer, the general etching tendency was studied with HF/HN$O_3$/De-ionized Water acidic solution. And the surface structures of textured mc-Si in various HF/HN$O_3$ ratios were compared. The surface morphology and reflectance of textured silicon wafers were measured by FE-SEM and UVvisible spectrophotometer, respectively. We obtained average reflectance of $16{\sim}19$% for wavelength between 400 nm and 900 nm depending on different etching conditions.

Preparation and crystallization of $PbO-ZnO-B_2O_3-P_2O_5$ low melting solder glasses ($PbO-ZnO-B_2O_3-P_2O_5$계 저융점 봉착용 유리의 제조 및 결정화)

  • Son, Myung-Mo;Lee, Heon-Soo;Lee, Sang-Geun;Lee, Chang-Hee;Ahn, Jin-Mo;Park, Hee-Chan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.08a
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    • pp.48-52
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    • 2003
  • Low melting crystalline solder glasses for CRT sealing were prepared from the composition of PbO 73.0~75.5 wt%, ZnO 12~15 wt%, $B_2O_3$ 7.0~9.0 wt%, BaO 1.5~3.5 wt%, $P_2O_5$ 1.0~2.5 wt%, $Bi_2O_3$ 0.5~20 wt%. The nucleation and crystallization of the crystalline solder glasses were studied by DTA, SEM and XRD. $2PbO{\cdot}ZnO{\cdot}B_2O_3$ crystalline phase was formed from glass matrix by heat-treatment of glass frits Crystalline solder glasses developed from this paper have good firing condition of $430{\sim}440^{\circ}C$ for 10min and good physical properties

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Study on Improving Surface Structure with Changing RF Power Conditions in RIE (reactive ion etching) (반응성 이온 건식식각에서 RF Power 변화에 따른 표면 조직화 개선 연구)

  • Park, Seok-Gi;Lee, Jeong In;Kang, Min Gu;Kang, Gi-Hwan;Song, Hee-eun;Chang, Hyo Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.8
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    • pp.455-460
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    • 2016
  • A textured front surface is required in high efficiency silicon solar cells to reduce reflectance and to improve light trapping. Wet etching with alkaline solution is usually applied for mono crystalline silicon solar cells. However, alkali texturing method is not appropriate for multi-crystalline silicon wafers due to grain boundary of random crystallographic orientation. Accordingly, acid texturing method is generally used for multi-crystalline silicon wafers to reduce the surface reflectance. To reduce reflectivity of multi-crystalline silicon wafers, double texturing method with combination of acid and reactive ion etching is an attractive technical solution. In this paper, we have studied to optimize RIE condition by different RF power condition (100, 150, 200, 250, 300 W).

IRAS 09425-6040: A Silicate Carbon Star with Crystalline Dust

  • Suh, Kyung-Won;Kwon, Young-Joo
    • The Bulletin of The Korean Astronomical Society
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    • v.37 no.2
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    • pp.140.2-140.2
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    • 2012
  • The silicate carbon star IRAS 09425-6040 shows very conspicuous crystalline silicate dust features and excessive emission at far infrared. To investigate properties of dusty envelopes around the object, we use radiative transfer models for axisymmetric and sphericallly symmetric dust distributions. We perform model calculations for various possible combinations of dust shells and disks with various dust species. We compare the model results with the observed spectral energy distributions (SEDs) including the IRAS, ISO, AKARI, MSX and 2MASS data. We find that a model with multiple disks of amorphous and crystalline silicate and multiple spherical shells of carbon dust can reproduce the observed SED fairly well. This supports the scenario for the origin of silicate carbon stars that oxygen-rich material was shed by mass loss when the primary star was an M giant and the O-rich material is stored in a circumbinary disk. Highly (about 75 %) crystallized forsterite dust in the disk can reproduce the conspicuous crystalline features of the ISO observational data. This object looks to have a detached silicate and H2O ice shell with a much higher mass-loss rate. It could be a remnant of the chemical transition phase. The last phase of stellar winds of O-rich materials looks to be a superwind.

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Growth of Single Crystalline 3C-SiC Thin Films for High Power Devices by CVD (CVD에 의한 고전력 디바이스용 단결정 3C-SiC 박막 성장)

  • Chung, Gwiy-Sang;Shim, Jae-Cheol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.2
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    • pp.98-102
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    • 2010
  • This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.

X-ray Diffraction Studies of Poly(aryl ether ether ketone) Fibers with Different Degrees of Crystallinity and Orientation

  • Karacan Ismail
    • Fibers and Polymers
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    • v.6 no.3
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    • pp.206-218
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    • 2005
  • Structural studies of series of 'as spun' and drawn PEEK fibers have been carried out using X-ray diffraction and optical microscopy techniques. The analysis of results suggest that fibers produced at a constant draw ratio with increasing draw temperatures show enhanced orientation and crystalline behaviour. The resolved equatorial and meridional traces provide additional structural parameters in terms of crystallinity, crystallite size, and crystallite thickness. It is concluded that drawing at a temperature below $T_g(i.e.,\;144^{\circ}C)$ results in poorly oriented non-crystalline materials, whereas drawing above $T_g$ results in highly oriented semi crystalline materials. Additional drawing proved to increase the overall orientation with slight improvements in lateral order of the chain molecules. Quantitative analysis revealed that the crystallite size increases with increasing drawing temperature. The results also revealed the increased crystallite size upon additional drawing. Crystalline orientation parameter, $_c$, suggests almost perfect orientation. In all cases, the amorphous orientation is found to be lower than the overall orientation parameter obtained from the optical birefringence. As a result of additional drawing, crystalline orientation was found to increase slightly but the increase in the orientation of non-crystalline material was found to be substantial. An average crystalline density was determined from the orthorhombic unit cell dimensions. It was found to vary as a result of processing conditions. It was also found that the value of the maximum birefringence shows heavy dependence on the chain conformation.

Electrical Characteristics Analysis for single-crystalline and multi-crystalline PV module optical character. (단결정과 다결정 태양전지 모듈의 광학적 특성에 따른 전기적 출력 특성 분석)

  • Lee, Jin-Seob;Kang, Gi-Hwan;Park, Chi-Hong;Yu, Gwon-Jong;Ahn, Hyunggun;Han, Deuk-Young
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1100-1101
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    • 2008
  • After lamination process, Isc is increased by sheet reflection. This paper presents the electrical output characteristics by back sheet reflection. The experiments was conducted by using single crystalline and multi crystalline PV module. The reflection area of single crystalline PV module is larger than multi one due to the difference of solar cell manufacturing. The experiments show that the increased performance ratio of single crystalline PV module output power is 1.55% rather than that of multi crystalline PV module output power is 1.13%. In addition, it is expected that the output power of single one rather than multi-one is increased by the lower temperature when the PV module is installed outside. The results can be reconsidered by the test material and test process. Back sheet used for humidity prevention makes PV module output power increasing.

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