• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.286-287
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• 2005

Critical current(Ic) degradation of HTS tapes and AC loss under mechanical load is one of the hottest issues in HTS development and application. Mechanical load reduces the critical current of superconducting wire, and the Ie degradation affects the AC loss of the wire. We measured the Ie degradation and AC loss under tension and bending of Bi-2223 tapes processed by "Powder-in-Tube" technique at 17K with self-field. And we have studied the frequency dependence of self-field AC loss in multi-filamentary Bi-2223/Ag tape at 77K. The measurement results and discussions on the relationship between Ic degradation and AC loss are presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.467-476
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• 2006

We fabricated the YBCO films on LAO substrate using the TFA-MOD method and evaluated the effects of heat treatment temperature and film thickness on the microstructure, degree of texture, and critical properties. The calcining and firing were peformed at the temperature range of $370^{\circ}C-460^{\circ}C\;and\;750^{\circ}C-800^{\circ}C$, respectively. For the films fired at $775^{\circ}C$ after calcining at $400^{\circ}C-430^{\circ}C$showed highest critical temperature (Tc-onset) of 89.5 K and critical current (Ic) of 40A/cm-width which corresponds to critical current density (Jc) of $1.8MA/cm^2$. The highest critical properties are probably attributed to the formation of purer YBCO phase, stronger biaxial texture, and higher oxygen content, according to the XRD, pole-figure, SEM, Raman analysis. From the multi-coated films, the Ic increased from 39 to 169 A/cm-width as the coating repeated to four times, while the corresponding Jc was measured from once to be in the range of $0.8-1.2MA/cm^2$. Both Ic and Jc degraded as the coating repeated further, indicating that the optimum thickness is in the range of $1.0{\mu}m-1.7{\mu}m$.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1265-1270
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• 2008

Electromigration is a one of a critical failure mechanism in microelectronic devices. Minimizing the thin film interconnections in microelectronic devices make high current densities at electrrical line. Under high current densities, an electromigration becomes critical problems in a microelectronic device. This phenomena under DC conditions was investigated with high temperature. The current density of 1.5MA/cm2 was stressed in interconnections under DC condition, and temperature condition $150^{\circ}C,\;175^{\circ}C,\;200^{\circ}C$. By increasing of thin film interconections, microelectronic devices durability is decreased and it gets more restriction by temperature. Electromigration makes electronic open by void induced, and hillock induced makes electronic short state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.69-72
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• 2004

In order to use HTS tape on electric power applications, such as cable, motor, transformer, fault current limiter, a long length of HTS tape with a good uniformity of critical current is inevitable. The longer length of HTS tape, the wider in the range of application and the lower cost of HTS tape. In this study three long length Bi-2223/Ag tapes(268m, 253m and 187m) were fabricated. Critical current uniformity along the length was greatly improved through the optimization of cold deformation and thermo-mechanical process. Average critical current of the tapes was 63.2 A, 54.6 A and 64.2 A, respectively Critical tensile strength and critical bending radius (77 K, 5 % Ic degradation) was 135 MPa and 56 m, respectively.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1251-1252
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• 2006

In order to investigate 95% retained critical current of Bi-2223/Ag tapes under various stress-strain conditions, load cell attached tension and bending apparatus was used. The critical current of stress-strained tape was degraded below 95% retained critical current when tension and bending was simultaneously applied together. But only one of this tension or bending did not degrade the tape below 95% retained critical current. Deformation temperature was important to maintain the 95% retained Ic of Bi-2223/Ag tapes after bending or tension deformation because mechanical strength of tapes can be changed drastically between room temperature and 77 K.

• Journal of Satellite, Information and Communications
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• v.8 no.2
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• pp.36-43
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• 2013

In this study, the high current behaviors and double snapback mechanism of gate grounded_extended drain n-type MOSFET(GG_EDNMOS) device were analyzed in order to realize the robust electrostatic discharge(ESD) protection performances of high voltage operating display driver IC(DDIC) chips. Both the transmission line pulse(TLP) data and the thermal incorporated 2-dimensional simulation analysis as a function of ion implant conditions demonstrate a characteristic double snapback phenomenon after triggering of bipolar junction transistor(BJT) operation. Also, the background carrier density is proven to be a critical factor to affect the high current behavior of the GG_EDNMOS devices.

• Journal of the Korean Ceramic Society
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• v.42 no.6 s.277
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• pp.437-442
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• 2005

We fabricated BSCCO-2212 (2212) bulk superconductor by melt casting process, and evaluated the dependence of the critical properties on the temperature and cooling .ate of mold and the pouring methods of melt. It was observed that the critical current (Ic) of 2212 was significantly dependent on the pre-heating temperature of the mold. At the pre-heating temperature of $500^{\circ}C$ followed by air cooling condition, Ic of 48 A at 77 K was obtained which was higher than others processed at different temperatures. In addition, the Ic improved to 132 A when tilt casting method was applied. The improved Ic is probably due to the fact that the tilt casting reduced a turbulent flow of the melt during casting causing less porosity and more homogeneous microsructure. Critical temperature was measured to be 87-89 K after the first heat treatment and it improved to 90-91 K when subsequently heat treated at $650^{\circ}C$ in a nitrogen atmosphere. This improvement was considered to be due to an optimization of the oxygen content in the range of 8.16-8.2.

• Nuclear Engineering and Technology
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• v.54 no.7
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• pp.2586-2591
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• 2022

In the present work, we have irradiated the DI-BSCCO superconducting tapes with the 100 keV deuterium ions to investigate the effect of ion irradiation on their critical current (Ic). The damage simulations are carried out using the binary collision approximation method to get the spatial distribution and depth profile of the damage events in the high temperature superconducting (HTS) tape. The point defects are formed near the surface of the HTS tape. These point defects change the vortex profile in the superconducting tape. Due to the long-range interaction of vortices with each other, the Ic of the tape degrades at the 77 K and self magnetic field. The radiation dose of 2.90 MGy degrades the 44% critical current of the tape. The results of the displacement per atom (dpa) and dose deposited by the deuterium ions are used to fit an empirical relation for predicting the degradation of the Ic of the tape. We include the dpa, dose and columnar defect terms produced by the incident particles in the empirical relation. The fitted empirical relation predicts that light ion irradiation degrades the Ic in the DI-BSCCO tape at the self field. This empirical relation can also be used in neutron irradiation to predict the lifetime of the DI-BSCCO tape. The change in the Ic of the DI-BSCCO tape due to deuterium irradiation is compared with the other second-generation HTS tape irradiated with energetic radiation.

• Journal of the Korean Ceramic Society
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• v.35 no.2
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• pp.137-144
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• 1998

High-temperature superconducting joints between 61 filaments of Bi-2223 tapes were fabricated by chem-ical corrosion and repeated thermomechanical process. The silver sheath of the superconducting tape was chemically removed using chemical etchant(NH4OH:H2O2=1:1) from one side of each tape without altering the form of lap joint. The joined region was formed by uniaxial pressing and a series of thermomechanical process and then subjected to properties measurement and microstructural analysis. The critical current(Ic) variation and I-V characteristics along the joint were mesured with several configuration of proble points. Ic value of the transition region of the joint inthe multifilament tape which limit the total current carring capacity of the superconducting tape was higher than that of monofilament tape. But the transition ex-ponent n-value of the multi-filament tape was lower than that of monofilament wire due to the interaction of the individual superconducting core of the multi-filament. The critical current through the joint area was improved by respeated press and reaction annealing treatment.

• Progress in Superconductivity and Cryogenics
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• v.5 no.1
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• pp.17-20
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• 2003

Josephson junctions were fabricated for several oxidation conditions and several junction sizes. Considering self-field effect suppressing the observed critical current (Ic) at large junctions, the observed Ic values were in good agreement with theoretical prediction. The predicted junction critical current for small junction limit was also confirmed by experiment. The dependence of the estimated Jc as a function of oxidation exposure showed that our junctions have lower Jc than other authors' at the same oxidation exposure. This is thought to be one of equipment-specific phenomena. Details of experimentals will be reported with brief discussion.