• Transactions of the Korean Society of Pressure Vessels and Piping
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• v.12 no.2
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• pp.34-39
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• 2016

This paper presents a method to quantify R-ratio effect on J-integral under large-amplitude cyclic loading condition. Generally, monotonic tearing resistance curves are used to assess stability of cracked nuclear piping under seismic loading. However, it is well known that fracture toughness decrease at cyclic loading condition, according to R-ratio. For this reason, it is important to quantify the J-R curves under cyclic loading condition. To quantify the R-ratio effect, correction method which was proposed by Tranchand is considered. This method considers crack opening area in order to calculate modified J-integral. This method leads to an increase of fracture toughness. At R=-0.5 case, this method is good agreement with monotonic J-R curves. However, results show that this method has a limit to apply a large R-ratio case.

• Journal of the Earthquake Engineering Society of Korea
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• v.6 no.3
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• pp.1-10
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• 2002

A series of unreinforced masonry(URM) walls were analytically investigated by FEM for a limited version of seismic in-plane performance. For this, URM walls were assumed to be continum and modeled as isotropic plane stress elements, within which the nature of cracking was propogated. Accordingly, behavioral mode of cracking in URM was modeled by smeared-crack approach. Total of 70 cases were considered for various parameters such as axial load ratio, aspect ratio and effective section area ratio due to the existence of opening, etc. The analysis results indicate that these parameters significantly and interactively influence over the ultimate strength of URM walls. Finally, it is suggested that the response modification factor for URM adopted in the current Korean Standard should be validated considering various forms of brittleness and probable failure modes in URM.

• Land and Housing Review
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• v.7 no.4
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• pp.323-328
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• 2016

There are small box opening for inserting of electric lamp box in the slab of apartment. Around this box opening, we normally use the detailing of WWF or plastic ring strengthening to protect cracks induced by shrinkage. The shrinkage amount of slab box around was measured and analysed in order to consider validity of these strengthening methods and to find out economical alternative. Alternative of strengthening methods are normally used strengthening methods in construction companies, which are WWF strengthening, plastic ring strengthening and no strengthening methods. The shrinkage amount was measured using contact guage at the spot of tip attached around the box on slab of small area unit apartment which have small exclusive area below $59m^2$. Measured data shows that there are no big differences between all the 3 strengthening methods and Measure data range is $-264{\mu}{\varepsilon}{\sim}+216{\mu}{\varepsilon}$. Measured shrinkage is on trend slightly increase till 3~5weeks after removal of forms and then decrease. But amount of shrinkage are very low for all the slabs and there are no probabilities of concrete crack by shrinkage.

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.117-120
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• 2002

We investigated the possibility of direct bonding of the Si ∥SiO$_2$/Si$_3$N$_4$∥Si wafers for Oxide-Nitride-Oxide(ONO) gate oxide applications. 10cm-diameter 2000$\AA$-thick thermal oxide/Si(100) and 500$\AA$-Si$_3$N$_4$LPCVD/Si (100) wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were premated wish facing the mirror planes by a specially designed aligner in class-100 clean room immediately. Premated wafer pairs were annealed by an electric furnace at the temperatures of 400, 600, 800, 1000, and 120$0^{\circ}C$ for 2hours, respectively. Direct bonded wafer pairs were characterized the bond area with a infrared(IR) analyzer, and measured the bonding interface energy by a razor blade crack opening method. We confirmed that the bond interface energy became 2,344mJ/$\m^2$ when annealing temperature reached 100$0^{\circ}C$, which were comparable with the interface energy of homeogenous wafer pairs of Si/Si.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.427-430
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• 2001

We prepared 10cm-diameter Si(100)/500 $\AA$-Si$_3$N$_4$/Si(100) wafer Pairs adopting 500 $\AA$ -thick Si$_3$N$_4$layer as insulating layer between single crystal Si wafers. Si3N, is superior to conventional SiO$_2$ in insulating. We premated a p-type(100) Si wafer and 500 $\AA$ -thick LPCVD Si$_3$N$_4$∥Si (100) wafer in a class 100 clean room. The cremated wafers are separated in two groups. One group is treated to have hydrophobic surface and the other to have hydrophilic. We employed a FLA(fast linear annealing) bonder to enhance the bond strength of cremated wafers at the scan velocity of 0.1mm/sec with varying the heat input at the range of 400~1125W. We measured bonded area using a infrared camera and bonding strength by the razor blade crack opening method. We used high resolution transmission electron microscopy(HRTEM) to probe cross sectional view of bonded wafers. The bonded area of two groups was about 75%. The bonding strength of samples which have hydrophobic surface increased with heat input up to 1577mJ/$m^2$ However, bonding strength of samples which have hydrophilic surface was above 2000mJ/$m^2$regardless of heat input. The HRTEM results showed that the hydrophilic samples have about 25 $\AA$ -thick SiO layer between Si and Si$_3$N$_4$/Si and that maybe lead to increase of bonding strength.