• Journal of Construction Engineering and Project Management
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• v.5 no.2
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• pp.44-52
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• 2015

Various approaches have been used in crack preparations and each of the approaches has advantages and disadvantages. Although the routing method has been widely used and seems to be the best approach among the approaches, it is not a complete solution for crack preparation. This paper compares and evaluates a pneumatic crack cleaning device (CCD) developed by Robotics and Intelligent Construction Automation group at Georgia Tech, over existing devices. Surveys were conducted to discover factors that affect the performance of crack/joint preparation work. Then, data for such information were collected via field tests for devices such as router, heat lancer, air blower and CCD. Performed field test results and follow-up interviews demonstrated that the utilization of CCD has potential to offer improvements in productivity, safety, and maintenance cost. An analytic hierarchical procedure (AHP) and economic analyses were conducted. The AHP analysis considered three factors including safety, quality and productivity while the economic analyses examined the alternatives in various ways. The results indicated that the CCD was ranked first and second for the AHP analysis and economic analysis, respectively. In conclusion, the field tests and results revealed that the utilization of CCD achieved satisfactorily in performance, quality, safety and control, and showed that it has high potential in crack cleaning practice.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.2502-2507
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• 2003

In this paper, a crack sealing robot is developed. The crack sealing robot is built to detect, track, and seal the crack on the pavement. The sealing robot is required to brush all dirt in the crack out for preparing a better sealing job. Camera calibration has been done to get accurate crack position. In order to perform a cleaning job, the explicit force control method is used to regulate a specified desired force in order to maintain constant contact with the ground. Experimental studies of force tracking control are conducted under unknown environment stiffness and location. Crack tracking control is performed. Force tracking results are excellent and the robot finds and tracks the crack very well.

• Journal of Institute of Control, Robotics and Systems
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• v.11 no.4
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• pp.337-343
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• 2005

In this paper, experimental studies of force control of the crack tracking robot are presented. The crack tracking robot should maintain constant contact with the road to perform cleaning process of the crack effectively. Regulating desired force on the road requires a sophisticated force control algorithm. Here, two main force control algorithms such as the impedance force control and the explicit force control are used. Performances of two force control algorithms are compared.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.1
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• pp.45-50
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• 2009

By Laser Through-Silicon-Via process, debris and particles occur when you are forming. Therefore the research of TSV cleaning become important to remove those particles and debris. Both chemical cleaning method that uses a surfactant and physical cleaning method that uses a brush were studied with the via of $30{\mu}m$ diameter and $100{\mu}m$ depth on the 8 inch CMOS Image Sensor wafer. On the DI water and a surfactant in mixture ratio of 2:1, debris show $73{\mu}m^2$ per $0.054mm^2$. Cleaning is superior by lower mixture ratio of DI water and surfactant. In addition, It is less than 5% of debris distribution in the laser condition changed by Laser's frequency and its speed and cleaning had no effect. In the physical cleaning, there are no crack and damage when the system condition is set by $1000{\sim}3000rpm$ strip, $50{\sim}3000rpm$ rinsing, and $200{\sim}300rpm$ brushing Therefore, debris and particles can be removed by enforced chemical method and physical method.

• Journal of the Korean Society for Nondestructive Testing
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• v.33 no.6
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• pp.511-518
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• 2013

Steam Generator (SG) tube, as a barrier isolating the primary coolant system from the secondary side of nuclear power plants (NPP), must maintain the structural integrity for the public safety and their efficient power generation. So, SG tubes are subject to the periodic examination and the repairs if needed so that any defective tubes are not in service. Recently, corrosion related degradations were detected in the tubes of the domestic OPR-1000 NPP, as a form of axially oriented outer diameter stress corrosion cracking (ODSCC). According to the studies on the factors causing the heat fouling as well as developing corrosion cracking, densely scaled deposits on the secondary side of the SG tubes are mainly known to be problematic causing the adverse impacts against the soundness of the SG tubes [1]. Therefore, the processes of various cleaning methods efficiently to dissolve and remove the deposits have been applied as well as it is imperative to maintain the structural integrity of the tubes after exposing to the cleaning agent. So qualification test (QT) should be carried out to assess the perfection of the chemical cleaning and QT is to apply the processes and to do ECT. In this paper, the chemical cleaning processes to dissolve and remove the scaled deposits are introduced and results of ECT on the artificial crack specimens to determine the effectiveness of those processes are represented.

• Journal of Industrial Technology
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• v.37 no.1
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• pp.12-15
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• 2017

It is important in dentistry that the provisional cement should be cleaned thoroughly from the crown before definitive cementation. The provisional cement has been removed by physical means such as curette, scaler, pumice, or sand-blasting with alumina particles, which is time-consuming, irritating, tedious, even causing crack. To avoid such troubles occurring through such physical cleaning means, the chemical solutions for dissolving the provisional cement remaining in dental crown were prepared, and solubilizing power of the solutions was measured and compared. The solution composed of MEA, NaOH, chloride chemicals ($CHCl_3$, $CCl_4$, $CH_2Cl_2$), surfactants (Igepal, Tween20), chelating agent (EDTA), and Ethyl cellosolve was most effective for dissolving the provisional cement.

• Nuclear Engineering and Technology
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• v.46 no.6
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• pp.869-874
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• 2014

It was discovered in a Korean PWR that an extensive number of very short and shallow cracks in the SG tubes were undetectable by eddy current in-service-inspection because of the masking effect of sludge deposits. Axial stress corrosion cracks at the outside diameter of the steam generator tubes near the line contacts with the tube support plates are the major concern among the six identical Korean nuclear power plants having CE-type steam generators with Alloy 600 high temperature mill annealed tubes, HU3&4 and HB3~6. The tubes in HB3&4 have a less susceptible microstructure so that the onset of ODSCC was substantially delayed compared to HU3&4 whose tubes are most susceptible to ODSCC among the six units. The numbers of cracks detected by the eddy current inspection jumped drastically after the steam generators of HB4 were chemically cleaned. The purpose of the chemical cleaning was to mitigate stress corrosion cracking by removing the heavy sludge deposit, since a corrosive environment is formed in the occluded region under the sludge deposit. SGCC also enhances the detection capability of the eddy current inspection at the same time. Measurement of the size of each crack using the motorized rotating pancake coil probe indicated that the cracks in HB4 were shorter and substantially shallower than the cracks in HU3&4. It is believed that the cracks were shorter and shallower because the microstructure of the tubes in HB4 is less susceptible to ODSCC. It was readily understood from the size distribution of the cracks and the quantitative information available on the probability of detection that most cracks in HB4 had been undetected until the steam generators were chemically cleaned.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.7
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• pp.424-432
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• 2000

The plasma surface treatment, using hydrogen gas, of the silicon wafer was investigated as a pretreatment for the application to silicon-on-insulator (SOI) wafers using the silicon direct bonding technique. The chemical reactions of hydrogen plasma with surfaces were used for both the surface activation and the removal of surface contaminants. As a result of exposure of silicon wafer to the plasma, an active oxide layer was formed on the surface, which was rendered hydrophilic. The surface roughness and morphology were estimated as functions of plasma exposing time as well as of power. The surface became smoother with decreased incident hydrogen ion flux by reducing plasma exposing time and power. This process was very effective to reduce the carbon contaminants on the silicon surface, which was responsible for a high initial surface energy. The initial surface energy measured by the crack propagation method was 506 mJ/m2, which was up to about three times higher than that of a conventional RCA cleaning method.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3279-3281
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• 1999

This paper describes a method of direct wafer bonding using surfaces activated by a radio-frequency hydrogen plasma. The hydrogen plasma cleaning of silicon in the RIE mode was investigated as a pretreatment for silicon direct bonding. The cleaned silicon surface was successfully terminated by hydrogen, The hydrogen-terminated surfaces were rendered hydrophilic, which could be wetted by Dl water rinse. Two wafers of silicon and silicon dioxide were contacted to each other at room temperature and postannealed at $300{\sim}1100^{\circ}C$ in an $N_2$ atmosphere for 2 h. From the AFM results, it was revealed that the surface became rougher with the increased plasma exposure time and power. The effect of the plasma treatment on the surface chemistry was investigated by the AES analysis. It was shown that the carbon contamination at the surface could be reduced below 5 at %. The interfacial energy measured by the crack propagation method was 122 $mJ/m^2$ and 384 $mJ/m^2$ for RCA cleaning and hydrogen plasm, respectively.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.6-11
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• 2000

The hydrogen plasma treatment of silicon wafers in the reactive ion-etching mode was studied for the application to silicon-on-insulator wafers which were prepared using the wafer bonding technique. The chemical reactions of hydrogen plasma with surface were used for both surface activation and removal of surface contaminants. As a result of exposure of silicon wafers to the plasma, an active oxide layer was found on the surface. This layer was rendered hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposing time and power. In addition, the surface became smoother with the shorter plasma exposing time and power. The value of initial surface energy estimated by the crack propagation method was 506 mJ/㎡, which was up to about three times higher as compared to the case of conventional direct using the wet RCA cleaning method.