• Title/Summary/Keyword: coupled properties

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Dry Etching of Al2O3 Thin Films in O2/BCl3/Ar Inductively Coupled Plasma

  • Yang, Xeng;Woo, Jong-Chang;Um, Doo-Seung;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.5
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    • pp.202-205
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    • 2010
  • In this study, the etch properties of $Al_2O_3$ thin films deposited by atomic layer deposition were investigated as a function of the $O_2$ content in $BCl_3$/Ar inductively coupled plasma. The experiments were performed by comparing the etch rates and selectivity of $Al_2O_3$ over the hard mask materials as functions of the input plasma parameters, such as the gas mixing ratio, DC-bias voltage, ratio-frequency (RF) power and process pressure. The highest obtained etch rate was 477 nm/min at an RF power of 700 W, $O_2$ to $BCl_3$/Ar gas ratio of 15%, DC-bias voltage of -100 V and process pressure of 15 mTorr. The deposition occurred on the surfaces when the amount of $O_2$ added to the $BCl_3$/Ar gas was too high at a low DC-bias voltage or high process pressure. X-ray photoelectron spectroscopy was used to investigate the chemical reactions on the etched surface.

Decoupling Process of a Coupled Design in Axiomatic Design Using the TRIZ (공리적 설계에서 트리즈를 이용한 연성설계의 비연성화 과정)

  • Shin, Gwang-Seob;Kim, Yong-Il;Park, Gyung-Jin
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.31 no.1 s.256
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    • pp.77-88
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    • 2007
  • Axiomatic Design has been developed as a general design framework during past two decades and TRIZ has been developed for a design tool over 50 years. Axiomatic design is quite excellent in that design should be decoupled. When a design matrix is established, the characteristics of the design are identified according to the coupling properties. If the design is coupled, a decoupling process should be found. However, axiomatic design does not specifically indicate how to decouple a coupled design. In this research, the coupling manner is classified into six patterns. Each pattern could be solved by an appropriate TRIZ module. A table, which matches the coupling pattern and a TRIZ module, is proposed for effective application of the two design theories. The decoupling ideas are proposed by using TRIZ modules. When the number of decoupled designs is more than one, the engineer should select the final idea. The proposed method is applied to practical cases such as a tape feeder and a beam adjuster of the laser marker.

Etching Properties of ZnS:Mn Thin Films in an Inductively Coupled Plasma

  • Kim, Gwan-Ha;Woo, Jong-Chang;Kim, Kyoung-Tae;Kim, Dong-Pyo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.1
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    • pp.1-5
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    • 2008
  • ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a $BCl_3(20)/Ar(80)$ gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200V, a total gas flow of 20 sccm, and a chamber pressure of 1Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in $BCl_3/Ar$ plasma.

Electrical and Optical Characteristics of Inductively Coupled Plasma by Ar Gas Pressure and Rf Power (Ar 가스 압력과 RF 전력에 따른 유도결합형 플라즈마의 전기적 및 광학적 특성)

  • 최용성;허인성;이영환;박대희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.5
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    • pp.560-566
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    • 2004
  • In this paper, the electrical and emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma (ICP) with the variation of argon gas pressure and RF power. The RF output was applied to the antenna in the range of 5∼50 W at 13.56 MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of -100V∼+100V. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from 10 to 30 W. Also, when the RF power was increased, electron density was increased. Also, the emission spectrum, Ar- I lins, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 mTorr, 10∼300 W, respectively. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

Dry etching properties of PST thin films using chlorine-based inductively coupled plasma (Chlorine-based 유도결합 플라즈마를 이용한 PST 박막의 건식 식각 특성)

  • Kim, Gwan-Ha;Kim, Kyoung-Tae;Kim, Dong-Pyo;Lee, Cheol-In;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.400-403
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    • 2003
  • Etching characteristics of (Pb,Sr)$TiO_3$(PST) thin films were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of Ar content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is $562\;{\AA}$/min and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

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Etch Properties of HfO2 Thin Films using CH4/Ar Inductively Coupled Plasma

  • Woo, Jong-Chang;Kim, Gwan-Ha;Kim, Dong-Pyo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.6
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    • pp.229-233
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    • 2007
  • In this study, we carried out an investigation of the etching characteristics(etch rate, selectivity) of $HfO_2$ thin films in the $CH_4/Ar$ inductively coupled plasma. It was found that variations of input power and negative dc-bias voltage are investigated by the monotonic changes of the $HfO_2$ etch rate as it generally expected from the corresponding variations of plasma parameters. At the same time, a change in either gas pressure or in gas mixing ratio result in non-monotonic etch rate that reaches a maximum at 2 Pa and for $CH_4(20%)/Ar(80%)$ gas mixture, respectively. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4-containing$ plasmas.

The Dry Etching Properties on TiN Thin Film Using an N2/BCl3/Ar Inductively Coupled Plasma

  • Woo, Jong-Chang;Joo, Young-Hee;Park, Jung-Soo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.4
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    • pp.144-147
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    • 2011
  • In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

Seismic performance evaluation of coupled core walls with concrete and steel coupling beams

  • Fortney, Patrick J.;Shahrooz, Bahram M.;Rassati, Gian A.
    • Steel and Composite Structures
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    • v.7 no.4
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    • pp.279-301
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    • 2007
  • When coupling beams are proportioned appropriately in coupled core wall (CCW) systems, the input energy from ground motions is dissipated primarily through inelastic deformations in plastic hinge regions at the ends of the coupling beams. It is desirable that the plastic hinges form at the beam ends while the base wall piers remain elastic. The strength and stiffness of the coupling beams are, therefore, crucial if the desired global behavior of the CCW system is to be achieved. This paper presents the results of nonlinear response history analysis of two 20-story CCW buildings. Both buildings have the same geometric dimensions, and the components of the buildings are designed based on the equivalent lateral force procedure. However, one building is fitted with steel coupling beams while the other is fitted with diagonally reinforced concrete coupling beams. The force-deflection relationships of both beams are based on experimental data, while the moment-curvature and axial load-moment relationships of the wall piers are analytically generated from cross-sectional fiber analyses. Using the aforementioned beam and wall properties, nonlinear response history analyses are performed. Superiority of the steel coupling beams is demonstrated through detailed evaluations of local and global responses computed for a number of recorded and artificially generated ground motions.

An Electric-Field Coupled Power Transfer System with a Double-sided LC Network

  • Xie, Shi-Yun;Su, Yu-Gang;Zhou, Wei;Zhao, Yu-Ming;Dai, Xin
    • Journal of Power Electronics
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    • v.18 no.1
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    • pp.289-299
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    • 2018
  • Electric-field coupled power transfer (ECPT) systems employ a high frequency electric field as an energy medium to transfer power wirelessly. Existing ECPT systems have made great progress in terms of increasing the transfer distance. However, the topologies of these systems are complex, and the transfer characteristics are very sensitive to variations in the circuit parameters. This paper proposes an ECPT system with a double-sided LC network, which employs a parallel LC network on the primary side and a series LC network on the secondary side. With the same transfer distance and output power, the proposed system is simpler and less sensitive than existing systems. The expression of the optimal driving voltage for the coupling structure and the characteristics of the LC networks are also analyzed, including the transfer efficiency, parameter sensitivity and total harmonic distortion. Then, a design method for the system parameters is provided according to these characteristics. Simulations and experiments have been carried out to verify the system properties and the design method.

Coupled evaluation of the free vibration characteristics of magneto-electro-elastic skew plates in hygrothermal environment

  • Mahesh, Vinyas;Kattimani, Subhaschandra;Harursampath, Dineshkumar;Trung, Nguyen-Thoi
    • Smart Structures and Systems
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    • v.24 no.2
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    • pp.267-292
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    • 2019
  • The present article addresses the coupled free vibration problem of skew magneto-electro-elastic plates (SMEE) considering the temperature-moisture dependent material properties. The plate kinematics follows Reddy's higher order shear deformation theory. With the aid of finite element methods, the governing equations of motion are derived considering the Hamilton's principle and solved by adopting condensation technique. The influence of different temperature and moisture dependent empirical constants on the frequency response of SMEE plate has been assessed. In addition, the natural frequencies corresponding to various fields are evaluated and the effect of empirical constants on these coupled frequencies is determined. A detailed parametric study has been carried out to assess the individual effects of temperature and moisture dependent empirical constants along with their combined effect, aspect ratio, length-to-width ratio, stacking sequence and boundary conditions. The results reveal that the external environment as well as the geometrical skewness has a significant influence on the stiffness of the SMEE plates.