• 자원환경지질
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• 제38권5호
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• pp.571-577
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• 2005

철산화물 피복 모래를 이용한 투수성 반응 벽체는 As(V)로 오염된 지하수의 처리에 매우 효과적인 것으로 알려져 있다 그러나 이 방법은 As(III)에 있어서는 그 제거효과가 제한적인 실정이다. 본 연구에서는 위 방법에 의한 3가 비소제거의 한계를 극복하기 위해서 As(III)를 As(V)로 산화시킬 수 있는 능력을 가진 망간산화물 피복 물질을 비소저감 촉진제로서, 철산화물 피복 물질을 이용한 처리 기법에 함께 적용하였다. 철산화물 피복 모래와 망간산화물 피복 모래를 함께 이용한 비소제거 방법으로서, 순차 제거법과 동시 제거법이 연구되었다. 두 가지 처리 방법 모두 6시간동안 $85\%$ 이상의 높은 비소제거 효율을 보였으며, 처리과정 동안 흡착제 표면의 철이나 망간의 용해에 의한 2차적인 오염도 일어나지 않았다. 그러나, 동시 제거법은 비소 저감 후 처리수의 산성도를 pH 6.0의 중성상태로 유지하는 반면, 순차 제거법은 처리수를 pH 4.5의 산성상태로 변화시키는 작용을 일으켜, 음용수로서의 이용을 위한 오염 지하수의 비소 저감법으로는 동시 제거법이 적합한 것으로 판정되었다. 보다 높은 As(III) 제거 효과를 위해, 망간 및 철산화물을 폴리프로필렌 섬유에 피복시켜 비소제거에 적용하였다. 폴리프로필렌 섬유는 높은 표면적과 낮은 비중의 특성을 가진, 신축성 있는 스폰지와 같은 저렴한 중합체의 일종이다. 이를 이용한 비소 제거법은 피복모래를 이용한 방법보다 월등히 뛰어난 $99\%$ 이상의 높은 비소제거 효율을 나타내었다. 또한, 피복 폴리프로필렌 섬유를 이용한 방법은 비소에 오염된 물의 음용수로의 이용을 위한 간편한 처리기법으로서 적용하기에 좋은 많은 실용적인 장점들을 가지고 있다.

• 전자공학회논문지B
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• 제32B권11호
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• pp.1434-1444
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• 1995

Current test has recently been known to be a promising testing method in CMOS VLSI because conventional voltage test can not make sure of the complete detection of bridging, gate-oxide shorts, stuck-open faults and etc. This paper presents a new BIC(built-in current sensor) for the internal current test in CMOS logic circuit. A single phase clock is used in the BIC to reduce the control circuitry of it and to perform a self- testing for a faulty current. The BIC is designed to detect the faulty current at the end of the clock period, so that it can test the CUT(circuit under test) with much longer critical propagation delay time and larger area than conventional BICs. The circuit is composed of 18 devices and verified by using the SPICE simulator.

• Journal of Electrical Engineering and Technology
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• 제6권2호
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• pp.280-283
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• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• Journal of Electrical Engineering and Technology
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• 제6권2호
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• pp.233-238
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• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• Bulletin of the Korean Chemical Society
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• 제33권12호
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• pp.4165-4168
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• 2012

Magnetic fluorescent silica nanotubes were fabricated using reverse micro-emulsions coupled with conventional sol-gel methods. Anodic aluminum oxide templates were used to separate spatially the magnetic and the fluorescent moieties on individual nanotubes and so prevent quenching of the fluorescence. C18 and fluorescent layers were deposited sequentially on silica. Magnetism was then obtained by the introduction of pre-made magnetic nanoparticles inside the nanotubes. The photo- and chemical stabilities of nanotubes were demonstrated through dye release and photobleaching tests. The produced nanotubes did not show fluorescence quenching upon the addition of the nanoparticles, an advantage over conventional spherical fluorescent magnetic nanoparticles. High photostability of nanotubes, magnetism and biocompatiblily make them potentially useful in bioanalysis.

• 전기학회논문지
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• 제60권1호
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• pp.114-118
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• 2011

Dye-Sensitized Solar Cells(DSSCs) consist of a titanium dioxide($TiO_2$) nano film of the photo electrode, dye molecules on the surface of the $TiO_2$ film, an electrolyte layer and a counter electrode. But two transparent conductive oxide(TCO) substrates are estimated to be about 60[%] of the total cost of the DSSCs. Currently novel TCO-less structures have been investigated in order to reduce the cost. In this study, we suggested a TCO-less DSSCs which has titanium double layer electrodes. Titanium double layer electrodes are formed by electron-beam evaporation method. Analytical instruments such as electrochemical impedance spectroscopy, scanning electron microscope were used to evaluate the TCO-less DSSCs. As a result, the proposed structure decreases energy conversion efficiency and short-circuit current density compared with the conventional DSSCs structure with FTO glass, while internal series impedance of TCO-less DSSCs using titanium double layer electrodes decreases by 27[%]. Consequently, the fill factor is improved by 28[%] more than that of the conventional structure.

• Restorative Dentistry and Endodontics
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• 제8권1호
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• pp.161-166
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• 1982

The purpose of this study was to examine the influence of canal preparation on the property of apical seal. Seventy canals from extracted human maxillary and mandibular teeth were randomly selected and divided into two groups: conventional group and step-back group. Thirty five canals in one group were enlarged with a, conventional preparation method and thirty five canals in the other group were instrumented in a step-back method with K-file. After instrumentation sixty canals were obturated by lateral condensation of gutta percha and zinc oxide eugenol cement, and five canals in each group were not filled and used as control. All the specimens were immersed in 2% methylene blue dye solution and the depth of dye penetration into the canals were observed by macroscope at the intervals of 1 day, 2 days, and 7 days. The following results were obtained. 1. All the canals experimented showed varying degrees of dye penetration. 2. There was no significant difference between conventional method and step-back method in the depth of dye penetration and the degree of dye penetration tended to increase with time passage in both groups. 3, In conventional preparation group the mean dye penetration was 3.6mm at 1 day, 4.8mm at 2 days. and 6.5mm at 7 days. 4. In step-back prepareation group, the specimens exposed to the dye for 1 day showed mean dye penetration of 4.1mm, and the specimens immersed in the dye for 2 days and 7 days revealed mean dye penetration of 4.6mm and 6.2mm respectively.

• 전기학회논문지
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• 제58권11호
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• pp.2214-2218
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• 2009

Dye-sensitized solar cell (DSC) has been considered as a possible alternative to current silicon based p-n junction photovoltaic devices due to its advantages of high efficiency, simple fabrication process and low production cost. Numerous researches for high efficient DSC in the various fields are under way even now. Among them, the compact layer, which prevents the back electron transfer between transparent conductive oxides and the redox electrolyte, is fabricated by various methods such as a ZnO dip-coating, $TiCl_4$ dip-coating, and Ti sputtering. In this study, we tried to fabricate the $TiO_2$ compact layer by the spin-coating method using aqueous $TiCl_4$ solution. The effect of the spin-coating method was checked as compared with conventional dip-coating method. As a result, DSC with a spin-coated compact layer had 33.4% and 6% better efficiency than standard DSC and DSC with a dip-coated compact layer.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.7.2-7.2
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• 2011

Photoelectrochemical solar cells such as dye-sensitized cells (DSSCs), which exhibit high performance and are cost-effective, provide an alternative to conventional p-n junction photovoltaic devices. However, the efficiency of such cells plateaus at 11~12%, in contrast to their theoretical value of 33%. The majority of research has focused on improving energy conversion efficiency of DSSC by controlling nanostructure and exploiting new materials in photoelectrode consisting of semiconducting oxide nanoparticles and a transparent conducting oxide electrode (TCO). In this presentation, we introduce monodisperesed TiO2 nanoparticles prepared by forced hydrolysis method and their superiority as photoelectrode materials was characterized with aids of optical and electrochemical analysis. Inverse opal-based scattering layers containing highly crystalline anatase nanoparticles are also introduced and their feasibility for use as bi-functional light scattering layer is discussed in terms of optical reflectance and charge generation properties as a function of optical wavelength.

• 전자공학회논문지A
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• 제33A권7호
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• pp.127-133
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• 1996

In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photoresist reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate form both sides of the main gate. The poly-Si channel layer below the offset oxide is protected form the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of oru new device is the offset region due to the offset oxide. our experimental reuslts show that the offset region, due to the photoresist reflow process, has been sucessfully obtained in order to fabricate the offset gated poly-Si TFTs. The maximum ON/OFF ratio occurs at the L$_{off}$ of 1.1${\mu}$m and exceeds 1X10$^{6}$.