• Title/Summary/Keyword: conventional oxide method

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Removal of NOx from Graphene based Photocatalyst Ceramic Filter (그래핀 기반 광촉매 담지 세라믹필터에서 질소산화물(NOx)의 제거)

  • Kim, Yong-Seok;Kim, Young-Ho
    • Applied Chemistry for Engineering
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    • v.33 no.6
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    • pp.600-605
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    • 2022
  • In this study, nitrogen oxide (NOx) removal experiments were performed using a graphene based ceramic filter coated with a V2O5-WO3-TiO2 catalyst. Graphene oxide (GO) was prepared by Hummer's method using graphite, and the reduced graphene oxide was produced by reducing with hydrazine (N2H4). Vanadium (V), Tungsten (W), and Titanium (Ti) were coated by the sol-gel method, and then a metal oxide-supported filter was prepared through a calcination process at 350 ℃. A NOx removal efficiency test was performed for the catalytic ceramic filters with UV light in a humid condition. When graphene oxide (GO) and reduced graphene oxide (rGO) were present on the filter, the NOx removal efficiency was superior to that of the conventional ceramic filter. Most likely, this is due to an improvement in the adsorption properties of NOx molecules on graphene coated surfaces. As the concentration of graphene increased, higher NOx removal efficiency was confirmed.

The Influence of The Burr Reduction by The Chemical Reaction of Oxide Film on Aluminum (알루미늄 박막의 표면화학반응이 버 감소에 미치는 영향)

  • 이현우;박준민;정상철;정해도;이응숙
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1997.10a
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    • pp.907-910
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    • 1997
  • With increasing the needs for micro and precision parts, micro machining technology has been studied to fabricate a small part with high density such as electronics, optics, communications, and medicine industry more than before. But there are many problems to be solved requiring a high-level technology. So this research presents the new method to fabricate a small part through applying chemical mechanical micro machining (C3M) for the Al wafer. Al(thickness I ,u m) was sputtered on the Si substrate. Al is widely used as a lightweight material. However form defect such as burr has a bad effect on products. To improve machinability of ductile material, oxide layer was formed on the surface of AI wafcr before grooving by chemical reaction with HN03(10wt%). And then workpieces were machined to compare conventional micro-machining process with newly suggested method at different machining condition such as load and feed rate. To evaluate whether or not the machinability was improved by the effect of chemical condition, such as the size, the width of grooves 'and burr generation were measured. Finally, it is confirmed that C3M is one of the feasible tools for micro machining with the aid of effect of the chemical reaction.

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Synthesis of Bi-Sb-Te-based Thermoelectric Powder by an Oxide-reduction Process (산화물 환원공정에 의한 Bi-Sb-Te계 열전분말 합성)

  • Lee, Gil-Geun;Kim, Sung-Hyun;Ha, Gook-Hyun;Kim, Kyung-Tae
    • Journal of Powder Materials
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    • v.17 no.4
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    • pp.336-341
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    • 2010
  • The present study focused on the synthesis of Bi-Sb-Te-based thermoelectric powder by an oxidereduction process. The phase structure, particle size of the synthesized powders were analyzed using XRD and SEM. The synthesized powder was sintered by the spark plasma sintering method. The thermoelectric property of the sintered body was evaluated by measuring the Seebeck coefficient and specific electric resistivity. The $Bi_{0.5}Sb_{1.5}Te_3$ powder had been synthesized by a combination of mechanical milling, calcination and reduction processes using mixture of $Bi_2O_3$, $Sb_2O_3$ and $TeO_2$ powders. The sintered body of the $Bi_{0.5}Sb_{1.5}Te_3$ powder synthesized by an oxide-reduction process showed p-type thermoelectric characteristics, even though it had lower thermoelectric properties than the sintered body of the $Bi_{0.5}Sb_{1.5}Te_3$ thermoelectric powder synthesized by the conventional melting-crushing method.

Characterization of ZnO Nanorods and SnO2-CuO Thin Film for CO Gas Sensing

  • Lim, Jae-Hwan;Ryu, Jee-Youl;Moon, Hyung-Sin;Kim, Sung-Eun;Choi, Woo-Chang
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.6
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    • pp.305-309
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    • 2012
  • In this study, ZnO nanorods and $SnO_2$-CuO heterogeneous oxide were grown on membrane-type gas sensor platforms and the sensing characteristics for carbon monoxide (CO) were studied. Diaphragm-type gas sensor platforms with built-in Pt micro-heaters were made using a conventional bulk micromachining method. ZnO nanorods were grown from ZnO seed layers using the hydrothermal method, and the average diameter and length of the nanorods were adjusted by changing the concentration of the precursor. Thereafter, $SnO_2$-CuO heterogeneous oxide thin films were grown from evaporated Sn and Cu thin films. The average diameters of the ZnO nanorods obtained by changing the concentration of the precursor were between 30 and 200 nm and the ZnO nanorods showed a sensitivity value of 21% at a working temperature of $350^{\circ}C$ and a carbon monoxide concentration of 100 ppm. The $SnO_2$-CuO heterogeneous oxide thin films showed a sensitivity value of 18% at a working temperature of $200^{\circ}C$ and a carbon monoxide concentration of 100 ppm.

Characteristics of phosphorescent OLED fabricated on IAZO anode grown by co-sputtering method (Co-sputtering 방법으로 제작한 IAZO 박막의 특성과 이를 이용하여 제작한 인광 OLED의 특성 분석)

  • Bae, Jung-Hyeok;Kim, Han-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.60-61
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    • 2007
  • IAZO (indium aluminium zinc oxide) anode films were co-sputtered on glass substrate using a dual target DC magnetron sputtering system. For preparation of IATO films, at constant DC power of IZO (indium zinc oxide) target of 100 W, the DC power of AZO (Aluminum zinc oxide) target was varied from 0 to 100 W. To analyze electrical and optical properties of IAZO anode, Hall measurement examination and UV/V is spectrometer were performed, respectively. In addition, structure of IAZO anode film was examined by X-ray diffraction (XRD) method. Surface smoothness was investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). From co-sputtered IAZO anode, good conductivity($2.32{\times}10^{-4}{\Omega}.cm$) and high transparency(approximately 80%) in the visible range were obtained even at low temperature deposition. Finally, J-V-L characteristics of phosphorescent OLED with IAZO anode were studied by Keithley 2400 and compared with phosphorescent OLED with conventional ITO anode.

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Strain characteristics and electrical properties of [Li0.055(K0.5Na0.5)0.945](Nb1-xTax)O3 ceramics

  • Lee, Jong-Kyu;Cho, Jeng-Ho;Kim, Byung-Ik;Kim, Eung Soo
    • Journal of Ceramic Processing Research
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    • v.13 no.spc2
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    • pp.341-345
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    • 2012
  • [Li0.055(K0.5Na0.5)0.945](Nb1-xTax)O3 (0.05 ≤ x ≤ 0.25) ceramics were prepared by the partial sol-gel (PSG) method to improve the microstructure homogeneity of Ta5+ ion and were compared to those prepared by the conventional mixed oxide (CMO) method. For the PSG method, Ta(OC2H5)5 was directly reacted with calcined [Li0.055(K0.5Na0.5)0.945]NbO3 powders and the specimens sintered at 1100 ℃ for 5 hrs showed a single phase with a perovskite structure. Compared to the specimens prepared by conventional mixed oxide powders, the relative ratio of tetragonal phase to orthorhombic phase of the sintered specimens prepared by Ta(OC2H5)5 was larger than that of the sintered specimens prepared by Ta2O5. The electromechanical coupling factor (kp), piezoelectric constant (d33) and dielectric constant (εr) of the sintered specimens were increased with Ta5+ content. These results could be attributed to the decrease of the orthorhombic-tetragonal polymorphic phase transition temperature (To-t), which could be evaluated by oxygen octahedral distortion. Strain of the sintered specimens prepared by the PSG method was higher than that of specimens prepared by the CMO method due to the increase of relative density. The effects of crystal structure on the strain characteristics of the specimens were also discussed.

Design of Parasitic Inductance Reduction in GaN Cascode FET for High-Efficiency Operation

  • Chang, Woojin;Park, Young-Rak;Mun, Jae Kyoung;Ko, Sang Choon
    • ETRI Journal
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    • v.38 no.1
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    • pp.133-140
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    • 2016
  • This paper presents a method of parasitic inductance reduction for high-speed switching and high-efficiency operation of a cascode structure with a low-voltage enhancement-mode silicon (Si) metal-oxide-semiconductor field-effect transistor (MOSFET) and a high-voltage depletion-mode gallium nitride (GaN) fielde-ffect transistor (FET). The method is proposed to add a bonding wire interconnected between the source electrode of the Si MOSFET and the gate electrode of the GaN FET in a conventional cascode structure package to reduce the most critical inductance, which provides the major switching loss for a high switching speed and high efficiency. From the measured results of the proposed and conventional GaN cascode FETs, the rising and falling times of the proposed GaN cascode FET were up to 3.4% and 8.0% faster than those of the conventional GaN cascode FET, respectively, under measurement conditions of 30 V and 5 A. During the rising and falling times, the energy losses of the proposed GaN cascode FET were up to 0.3% and 6.7% lower than those of the conventional GaN cascode FET, respectively.

The Research of Optimal Plant Layout Optimization based on Particle Swarm Optimization for Ethylene Oxide Plant (PSO 최적화 기법을 이용한 Ethylene Oxide Plant 배치에 관한 연구)

  • Park, Pyung Jae;Lee, Chang Jun
    • Journal of the Korean Society of Safety
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    • v.30 no.3
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    • pp.32-37
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    • 2015
  • In the fields of plant layout optimization, the main goal is to minimize the construction cost including pipelines as satisfying all constraints such as safety and operating issues. However, what is the lacking of considerations in previous researches is to consider proper safety and maintenance spaces for a complex plant. Based on the mathematical programming, MILP(Mixed Integer Linear Programming) problems including various constraints can be formulated to find the optimal solution which is to achieve the best economic benefits. The objective function of this problem is the sum of piping cost, pumping cost and area cost. In general, many conventional optimization solvers are used to find a MILP problem. However, it is really hard to solve this problem due to complex inequality and equality constraints, since it is impossible to use the derivatives of objective functions and constraints. To resolve this problem, the PSO (Particle Swarm Optimization), which is one of the representative sampling approaches and does not need to use derivatives of equations, is employed to find the optimal solution considering various complex constraints in this study. The EO (Ethylene Oxide) plant is tested to verify the efficacy of the proposed method.

Oxide precursor-based MOD processing of YBCO thin films

  • Kim, Young-Kuk;Yoo, Jai-Moo;Ko, Jae-Woong;Chung, Kook-Chae;Heo, Soon-Young
    • Progress in Superconductivity and Cryogenics
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    • v.6 no.4
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    • pp.5-8
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    • 2004
  • A low cost MOD processing using YBCO oxide powder as a starting precursor was employed for fabrication of YBCO thin films. YBCO oxide is advantageous over metal acetates or TFA salts which are popular starting precursors for conventional MOD-TFA process. YBCO thin films were prepared by oxide-precursor-based MOD process and annealing condition was optimized. The YBCO thin film annealed at 78$0^{\circ}C$ shows no transport $I_c$ and poor microstructure. However, the YBCO thin film annealed at higher temperature shows improvement in microstructure and current transport property. In order to improve critical current, YBCO thin film was prepared by double coating method. YBCO thin film prepared with double coating approach shows enhanced superconducting performance ($I_c$>100A/cm-w).

High Performance Current Sensing Circuit for Current-Mode DC-DC Buck Converter

  • Jin, Hai-Feng;Piao, Hua-Lan;Cui, Zhi-Yuan;Kim, Nam-Soo
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.1
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    • pp.24-28
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    • 2010
  • A simulation study of a current-mode direct current (DC)-DC buck converter is presented in this paper. The converter, with a fully integrated power module, is implemented by using sense method metal-oxide-semiconductor field-effect transistor (MOSFET) and bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. When the MOSFET is used in a current sensor, the sensed inductor current with an internal ramp signal can be used for feedback control. In addition, the BiCMOS technology is applied in the converter for an accurate current sensing and a low power consumption. The DC-DC converter is designed using the standard $0.35\;{\mu}m$ CMOS process. An off-chip LC filter is designed with an inductance of 1 mH and a capacitance of 12.5 nF. The simulation results show that the error between the sensing signal and the inductor current can be controlled to be within 3%. The characteristics of the error amplification and output ripple are much improved, as compared to converters using conventional CMOS circuits.