한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
- /
- Pages.60-61
- /
- 2007
Co-sputtering 방법으로 제작한 IAZO 박막의 특성과 이를 이용하여 제작한 인광 OLED의 특성 분석
Characteristics of phosphorescent OLED fabricated on IAZO anode grown by co-sputtering method
- Bae, Jung-Hyeok (Dept. of Information and Nano Materials Eng. Kumoh National Institute of Technology (KIT)) ;
- Kim, Han-Ki (Dept. of Information and Nano Materials Eng. Kumoh National Institute of Technology (KIT))
- 발행 : 2007.06.21
초록
IAZO (indium aluminium zinc oxide) anode films were co-sputtered on glass substrate using a dual target DC magnetron sputtering system. For preparation of IATO films, at constant DC power of IZO (indium zinc oxide) target of 100 W, the DC power of AZO (Aluminum zinc oxide) target was varied from 0 to 100 W. To analyze electrical and optical properties of IAZO anode, Hall measurement examination and UV/V is spectrometer were performed, respectively. In addition, structure of IAZO anode film was examined by X-ray diffraction (XRD) method. Surface smoothness was investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). From co-sputtered IAZO anode, good conductivity(