• 조명전기설비학회논문지
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• 제13권1호
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• pp.46-52
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• 1999

본 논문은 NPC 인버터의 구조를 위한 유도전동기 구동 시스템의 새로운 히스테리시스 전휴 제어기법을 제안하였다. 이러한 NPC 구조를 가지는 히스테리시스 전류제어 인버터의 구조는 각상의 인버터 출력전압을 제어하는 주 스위칭 소자와 주 스위치 OFF시에 출력전압을 0전위로 유지시키기 위한 보조 스위칭 소자로 구성된다. 이와 같이 제안된 HNPC (Hysteresis current controlled Neutral Point Clamped) 스위칭 기법은 1차, 2차 전류밴드를 가지며, 전압스위칭 신호는 1차 밴드와 실제전류의 비교 결과로서 발생하고, 2차 밴드와 실제전류의 비교 결과는 전압 스위칭 신호의 상위와 하위를 스위치의 동작을 결정하는 신호로서 동작한다. 이러한 스위칭의 결과로서 제안된 인버터 시스템의 출력 파형은 기존의 전류제어 방식과 비교하여 적은 고조파 성분의 함유특성을 가지고, 동일한 전류밴드 범위에서 낮은 스위칭 주파수를 가진다. 본 연구에서는 제안된 기법을 유도 전동기 구동 시스템에 적용하므로 이들 특성을 시뮬레이션을 통하여 고찰하였다.

• 한국전기전자재료학회논문지
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• 제18권1호
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• pp.17-23
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• 2005

The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

• 대한전기학회논문지
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• 제41권9호
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• pp.1013-1020
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• 1992

The conductivity variation of a high resistivity bulk silicon semiconductor, whose electrodes were deposited with aluminum vapor, was studied experimentally by measuring the X-ray intensity and current flow, which was developed by X-ray radiation while applying a pulse voltage to the silicon, in a load resistor connected to the semiconductor. The current flow observed immediately as the X-ray radiated, and when the X-ray decreased. It was found from the observation of switching current for the X-ray intensity and the voltage applied in the semiconductor that the switching current of the semiconductor increased as the intensity of the X-ray and the applied voltage increased. In case of lower applied voltage, the switching current for higher applied voltage depended on the intensity of the X-ray radiated due to the saturation of electron and hole.

• 제어로봇시스템학회논문지
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• 제2권4호
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• pp.318-323
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• 1996

The speed of SR(Switched Reluctance) motor can be controlled by switching angle. However, since the relation between speed and switching is nonlinear, it is difficult for simple adjustment schemes to achieve the desired performances. In this paper, an error.feedback nonlinear compensator with robustness is proposed for improving the performances of the switching angle controlled SR motor. The proposed controller consists of integral type control and relay type control. The integral type controller which operates regulation, is derived by the steady.state I/O(input/output) map and the relay type controller which works tracking, is designed by Lyapunov stability theory. The validities of the proposed controller are confirmed with the experimental results.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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• pp.121-125
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• 1993

This paper proposes two kinds of novel switching method for a single phase current-controlled voltage-type ac-to-dc converter. Proposed are modifications of the conventional hysteresis current control, and are named by the half suppressing method and unipolar method, respectively. The first one suppresses an inactive half of the four switching signals and uses active another half for current control. The second method uses only one, a quarter of switching signals suppresed the others. Both the simulation and experimental results show that proposed methods are more efficient in switch utilization and have comparable or better performance when compared with conventional method.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제51권12호
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• pp.664-669
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• 2002

In this paper the method to determine tire optimal switching instants in order to reduce the transient surges during switching not relevant to the neutral treatment of shunt reactors is presented. This method consists of the following two steps. First, the instants of the voltage peaks between the contacts of each poles and the voltage magnitude as well as the moments of the current zero crosses were found out analytically. Next, the instants of the contact touches or separations were determined in consideration of the rate of decrease of dielectric strength or a circuit breaker and the variation of the its operating time. The results obtained from the EMTP(Electromagnetic Transient Program) analysis studies show that the making instants are established at the peak voltage of each three poles for any conditions of a neutral point and the possible upper limited values of inrush currents due to the variation of the mechanical operating time can be estimated.

• Journal of Power Electronics
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• 제3권1호
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• pp.1-9
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• 2003

This paper presents a performance analysis of typical Auxiliary Resonant Commutation Snubber-assisted three phase voltage source soft switching inverter which can operate under a condition of Zero Voltage Switching (ZVS) using a digital control scheme which is suitable for high power applications compared with resonant DC link snubber assisted soft switching inverter. The system performances of this inverter are illustrated and evaluated on the basis of experimental results.

• 전력전자학회논문지
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• 제23권3호
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• pp.190-198
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• 2018

This paper proposes a nonisolated, bidirectional, soft-switching DC - DC converter with PWM plus phase shift (PPS) control. The proposed converter has an input-parallel/output-series configuration and can achieve the interleaving effect and high voltage gains, resulting in decreased voltage ratings in all related devices. The proposed converter can operate under zero-voltage switching (ZVS) conditions for all switches in continuous conduction mode. The power flow of the proposed converter can be controlled by changing the phase shift angle, and the duty is controlled to balance the voltage of four high voltage side capacitors. The PPS control device of the proposed converter is simple in structure and presents symmetrical switching patterns under a bidirectional power flow. The PPS control also ensures ZVS during charging and discharging at all loads and equalizes the voltage ratings of the output capacitors and switches. To verify the validity of the proposed converter, an experimental investigation of a 2 kW prototype is performed in both charging and discharging modes under different load conditions and a bidirectional power flow.

• Journal of Power Electronics
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• 제5권3호
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• pp.233-239
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• 2005

In this paper, a new conceptual circuit configuration of a 3-phase voltage source, soft switching AC-DC-AC converter using an IGBT module, which has one ARCPL circuit and one ARDCL circuit, is presented. In actuality, the ARCPL circuit is applied in the 3-phase voltage source rectifier side, and the ARDCL circuit is in the inverter side. And more, each power semiconductor device has a novel clamp snubber circuit, which can save the power semiconductor device from voltage and current across each power device. The proposed soft switching circuits have only two active power semiconductor devices. These ARCPL and ARDCL circuits consist of fewer parts than the conventional soft switching circuit. Furthermore, the proposed 3-phase voltage source soft switching AC-DC-AC power conversion system needs no additional sensor for complete soft switching as compared with the conventional 3-phase voltage source AC-DC-AC power conversion system. In addition to this, these soft switching circuits operate only once in one sampling term. Therefore, the power conversion efficiency of the proposed AC-DC-AC converter system will get higher than a conventional soft switching converter system because of the reduced ARCPL and ARDCL circuit losses. The operation timing and terms for ARDCL and ARCPL circuits are calculated and controlled by the smoothing DC capacitor voltage and the output AC current. Using this control, the loss of the soft switching circuits are reduced owing to reduced resonant inductor current in ARCPL and ARDCL circuits as compared with the conventional controlled soft switching power conversion system. The operating performances of proposed soft switching AC-DC-AC converter treated here are evaluated on the basis of experimental results in a 50kVA setup in this paper. As a result of experiment on the 50kVA system, it was confirmed that the proposed circuit could reduce conduction noise below 10 MHz and improve the conversion efficiency from 88. 5% to 90.5%, when compared with the hard switching circuit.

• 마이크로전자및패키징학회지
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• 제27권4호
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• pp.77-81
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• 2020

Resistive RAM (ReRAM)은 전이금속 산화물의 저항변화 특성을 이용하는 차세대 비휘발 메모리로 전이금속산화물 내의 산소공공의 재분포를 통한 저항변화 특성을 이용한다. 따라서 저항변화 특성을 위해 전이금속산화물 내에는 일정량 이상의 산소공공이 요구되며 이를 위해서는 박막 형성 공정에서 산화 수를 조절할 수 있는 공정이 필요하다. 본 연구에서는 직접패턴이 가능한 photochemical metal organic deposition (PMOD) 공정을 사용하여 UV 노출에 의해 photochemical metal organic precursor의 ligand가 분해되는 과정에서 전기장을 인가하여 박막내의 산화 수를 조절하는 실험을 진행하였다. Electric field assisted PMOD (EFAPMOD) 법을 이용하여 FeOx 박막의 산화 수 조절이 가능함을 x-ray photoelectron spectroscopy (XPS) 분석과 I-V 측정을 통하여 확인하였으며, EFAPMOD 공정 중 인가하는 전압의 크기를 조절하여 박막의 산화 수를 조절할 수 있음을 확인하였다. 따라서 EFAPMOD 공정 중 인가전압의 크기를 이용하여 저항변화 특성에 적합한 적정한 산화수를 가지는 금속산화물 박막을 얻고 그 저항변화 특성을 조정할 수 있음을 확인하였다.