• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.5
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• pp.101-109
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• 2009

In this paper, a new method, cascade 3 phase IHCML(Isolated H-bridge Cascade Multi-Level) inverter and a control method is proposed by using two 3-phase transformers that have respectively different transformation rates. Vector control technique in which the highest proximity vector has been used is also put into use. With this process, the switching frequency is almost identical with the output fundamental frequency, which makes less switching loss, and the switching frequency of the small volume of the H-bridge that is in charge of small power is highly controlled, which improves the quality of the output voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.385-385
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• 2012

A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.2
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• pp.63-68
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• 2017

This paper proposes a new non-isolated DC conversion circuit topology of the voltage source coupled inductor series resonant high-frequency PFM controlled boost chopper type DC-DC power converter using two in one IGBT power module, which can efficiently operate under a principle of zero current soft switching for wide output regulation voltage setting ranges and wide fluctuation of the input DC side voltage as well as the load variation ranges. Its steady state operating principle and the output voltage regulation characteristics in the open-loop-based output voltage control scheme without PI controller loop are described and evaluated from theoretical and experimented viewpoints. Finally, in this paper the computer-aided simulation steady-state analysis and the experimental results are presented in order to prove the effectiveness and the validity of voltage regulation characteristics of the proposed series resonant zero current soft switching boost chopper type DC-DC power converter circuit using IGBTs which is based on simple pulse frequency modulation strategy more than, 20kHz.

• Convergence Security Journal
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• v.12 no.3
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• pp.35-43
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• 2012

The explosive growth of Internet traffic cause by smart equipment such as smart phone has led to a dramatic increase in demand for data transmission capacity and network control architecture, which requires high transmission rates beyond the conventional transmission capability. Next generation networks are expected to be controlled by Generalized Multi-Protocol Label Switching(GMPLS) protocol suite and operating at multiple switching layers. In order to ensure the most efficient utilization of multilayer network resources, effective global provisioning that providing the network with the possibility of reacting in advance to traffic changes should be provided. In this paper, we proposes a new path selection scheme in multilayer optical networks based on the vertical PCE architecture and a different approach to efficiently exploit multiple PCE cooperation.

• 전기의세계
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• v.28 no.7
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• pp.49-55
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• 1979

This paper describes the mechanisms which breaks A.C. over-current protection in low voltage load. For the high speed over-current protection, it consists of thyristor switching circuit by forced commutation, IC logic gate controlled circuit and over-current detector with reed switch. Under various duty conditions, breacker was carried out several experiments and discussions. The results are as follows; (1) over-current cut off is possible within a quarter cycle (4ms at 60Hz) and clear is at least ten times faster than its electromechanical equivalent. (2) as the forced commutation thyristor circuit breaker has capability of high speed break, equivalent surgy current capacity of switching thyristor is increased more than twenty times of its rated current. (3) breaker using solid state dose not produce any harmful arc during switching period. Therefore the breaker above described may be considered an effective over-current protector for soli state power devices in industrial applications.

• Journal of Power Electronics
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• v.10 no.2
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• pp.155-164
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• 2010

This paper presents a voltage control algorithm for a hybrid multilevel inverter based on a staged-perception of the inverter voltage vector diagram. The algorithm is applied to control a three-stage eighteen-level hybrid inverter, which has been designed with a maximum number of symmetrical levels. The inverter has a two-level main stage built using a conventional six-switch inverter and medium- and low- voltage three-level stages constructed using cascaded H-bridge cells. The distinctive feature of the proposed algorithm is its ability to avoid the undesirable high switching frequency for high- and medium- voltage stages despite the fact that the inverter's dc sources voltages are selected to maximize the number of levels by state redundancy elimination. The high- and medium- voltage stages switching algorithms have been developed to assure fundamental switching frequency operation of the high voltage stage and not more than few times this frequency for the medium voltage stage. The low voltage stage is controlled using a SVPWM to achieve the reference voltage vector exactly and to set the order of the dominant harmonics. The inverter has been constructed and the control algorithm has been implemented. Test results show that the proposed algorithm achieves the desired features and all of the major hypotheses have been verified.

• Journal of Power Electronics
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• v.14 no.4
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• pp.661-670
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• 2014

A new DC/DC converter with zero voltage switching is proposed for applications with high input voltage and high load current. The proposed converter has two circuit modules that share load current and power rating. Interleaved pulse-width modulation (PWM) is adopted to generate switch control signals. Thus, ripple currents are reduced at the input and output sides. For high-voltage applications, each circuit module includes two half-bridge legs that are connected in series to reduce switch voltage rating to $V_{in}/2$. These legs are controlled with the use of asymmetric PWM. To reduce the current rating of rectifier diodes and share load current for high-load-current applications, two center-tapped rectifiers are adopted in each circuit module. The primary windings of two transformers are connected in series at the high voltage side to balance output inductor currents. Two series capacitors are adopted at the AC terminals of the two half-bridge legs to balance the two input capacitor voltages. The resonant behavior of the inductance and capacitance at the transition interval enable MOSFETs to be switched on under zero voltage switching. The circuit configuration, system characteristics, and design are discussed in detail. Experiments based on a laboratory prototype are conducted to verify the effectiveness of the proposed converter.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.6
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• pp.515-525
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• 2022

The wireless power transfer (WPT) charging system for AGV depends highly on the coupling conditions due to air gap variation. To attain stable output power with high transfer efficiency under various coupling conditions, a single-stage, DC-DC converter that operates with robustness to changes in air gaps is proposed for the WPT system. The proposed converter is capable of soft switching under the set input voltage (V_in: 380 V_DC), load conditions (0-1 kW), and air gap changes (30-70 mm). In addition, a wide output voltage range (Vo: 39-54 V_DC) can be controlled by varying the link voltage due to the phase control at a fixed switching frequency. Experimental results are verified using a prototype of a 1 kW wireless power charging system.

• Journal of Power Electronics
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• v.13 no.2
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• pp.256-263
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• 2013

This paper presents an IHQRR (Integrated High Quality Rectifier Regulator) BIFRED (Boost Integrated Flyback Rectifier Energy Storage DC-DC) converter fed BLDC (Brushless DC) motor drive. A reduced sensor topology is derived by utilizing a BIFRED converter to operate in a dual DCM (Discontinuous Conduction Mode) thus utilizing a voltage follower approach for the PFC (Power Factor Correction) and voltage control. A new approach for speed control is proposed using a single voltage sensor. The speed of the BLDC motor drive is controlled by varying the DC link voltage of the front end converter. Moreover, fundamental frequency switching of the VSI's (Voltage Source Inverter) switches is used for the electronic commutation of the BLDC motor which reduces the switching losses in the VSI. The proposed drive is designed for a wide range of speed control with an improved power quality at the AC mains which falls within the recommended limits imposed by international power quality standards such as IEC 61000-3-2.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.815-818
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• 1998

The Insulated Gate Bipolar Transistor has the characteristics of MOSFET and BJT. The characteristics of proposed device exhibit high speed switching, the voltage controlled property, and the low ON resistance. This hybrid device has been used and developed continuously in the power electronic engineering field. We can simulate many IGBT circuits, such as the motor drive circuit, the switching circuits etc, with PSpice. However, some problems in PSpice is that the IGBT is old-fashioned and is very difficult to get it. In this paper, the IGBT in PSpice is considered as the basic structure. We changed the valuse of base width, gate-drain overlaping area, device area, and doping concentration, then calculated MOS transconductance, ambipolar recombination lifetime etc. Using this resultant parameter, we could predict the transient response characteristicsof IGBT, for examplex, voltage overshoot, the rising curve of voltage, and the falling curve of current.