• 제목/요약/키워드: control leakage

검색결과 927건 처리시간 0.025초

Active-Matrix Field Emission Display with Amorphous Silicon Thin-Film Transistors and Mo-Tip Field Emitter Arrays

  • Song, Yoon-Ho;Hwang, Chi-Sun;Cho, Young-Rae;Kim, Bong-Chul;Ahn, Seong-Deok;Chung, Choong-Heui;Kim, Do-Hyung;Uhm, Hyun-Seok;Lee, Jin-Ho;Cho, Kyoung-Ik
    • ETRI Journal
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    • 제24권4호
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    • pp.290-298
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    • 2002
  • We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

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Quantum Transport Simulations of CNTFETs: Performance Assessment and Comparison Study with GNRFETs

  • Wang, Wei;Wang, Huan;Wang, Xueying;Li, Na;Zhu, Changru;Xiao, Guangran;Yang, Xiao;Zhang, Lu;Zhang, Ting
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권5호
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    • pp.615-624
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    • 2014
  • In this paper, we explore the electrical properties and high-frequency performance of carbon nanotube field-effect transistors (CNTFETs), based on the non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. The calculated results show that CNTFETs exhibit superior performance compared with graphene nanoribbon field-effect transistors (GNRFETs), such as better control ability of the gate on the channel, higher drive current with lower subthreshold leakage current, and lower subthreshold-swing (SS). Due to larger band-structure-limited velocity in CNTFETs, ballistic CNTFETs present better high-frequency performance limit than that of Si MOSFETs. The parameter effects of CNTFETs are also investigated. In addition, to enhance the immunity against short - channel effects (SCE), hetero - material - gate CNTFETs (HMG-CNTFETs) have been proposed, and we present a detailed numerical simulation to analyze the performances of scaling down, and conclude that HMG-CNTFETs can meet the ITRS'10 requirements better than CNTs.

Three-dimensional porous graphene materials for environmental applications

  • Rethinasabapathy, Muruganantham;Kang, Sung-Min;Jang, Sung-Chan;Huh, Yun Suk
    • Carbon letters
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    • 제22권
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    • pp.1-13
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    • 2017
  • Porous materials play a vital role in science and technology. The ability to control their pore structures at the atomic, molecular, and nanometer scales enable interactions with atoms, ions and molecules to occur throughout the bulk of the material, for practical applications. Three-dimensional (3D) porous carbon-based materials (e.g., graphene aerogels/hydrogels, sponges and foams) made of graphene or graphene oxide-based networks have attracted considerable attention because they offer low density, high porosity, large surface area, excellent electrical conductivity and stable mechanical properties. Water pollution and associated environmental issues have become a hot topic in recent years. Rapid industrialization has led to a massive increase in the amount of wastewater that industries discharge into the environment. Water pollution is caused by oil spills, heavy metals, dyes, and organic compounds released by industry, as well as via unpredictable accidents. In addition, water pollution is also caused by radionuclides released by nuclear disasters or leakage. This review presents an overview of the state-of-the-art synthesis methodologies of 3D porous graphene materials and highlights their synthesis for environmental applications. The various synthetic methods used to prepare these 3D materials are discussed, particularly template-free self-assembly methods, and template-directed methods. Some key results are summarized, where 3D graphene materials have been used for the adsorption of dyes, heavy metals, and radioactive materials from polluted environments.

전리방사선 노출과 관리 (Exposure Assessment and Management of Ionizing Radiation)

  • 정은교;김갑배;송세욱
    • 한국산업보건학회지
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    • 제25권1호
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    • pp.27-35
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    • 2015
  • Objectives: To investigate safety and health management, conditions in factories or facilities handling radiation-generating devices and radioactive isotopes were reviewed in terms of regulations of radiation safety control in Korea. Radiation exposure levels generated at those facilities were directly measured and evaluated for establishing an effective safety and health management plan. Methods: Government organizations with laws and systems of radiation safety and health were investigated and compared. There are three laws governing radiation-related employment such as occupational safety and health acts, nuclear safety acts, and medical service acts. We inspected 12 workplaces as research objects:four workplaces that manufacture and assemble semiconductor devices, three non-destructive inspection workplaces that perform inspections on radiation penetration, and five workplaces in textile and tire manufacturing. Monitoring of radiation exposure was performed through two methods. Spatial and surface monitoring using real-time radiation instruments was performed on each site handling radiation generating devices and radioactive isotopes in order to identify radiation leakage. Results: According to the occupational safety and health act, there is no legal obligation to measure ionizing radiation and set dose limits. This can cause confusion in the application of the laws, because the scopes and contents are different from each other. Surface dose rates in radiation generating devices such as implanters, thickness gages and accelerators, which were registered according to nuclear safety acts, using surveymeters, and seven of 36 facilities(19.4%) exceeded the international standards for surface radiation dose of $10{\mu}Sv/hr$. Conclusions: The results showed that occupational health and safety acts require a separate provision for measuring and assessing the radiation exposure of workers performing radiation work. Like noise, ionizing radiation will also periodically be controlled by including it in the object factors of work-environment measurement.

Location of Ruptured Bullae in Secondary Spontaneous Pneumothorax

  • Choi, Jinseok;Ahn, Hyo Yeong;Kim, Yeong Dae;I, Hoseok;Cho, Jeong Su;Lee, Jonggeun
    • Journal of Chest Surgery
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    • 제50권6호
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    • pp.424-429
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    • 2017
  • Background: The surgical treatment of secondary spontaneous pneumothorax (SSP) can be complicated by fragile lung parenchyma. The preoperative prediction of air leakage could help prevent intraoperative lung injury during manipulation of the lung. Common sites of bulla development and ruptured bullae were investigated based on computed tomography (CT) and intraoperative findings. Methods: The study enrolled 208 patients with SSP who underwent air leak control through video-assisted thoracoscopic surgery (VATS). We retrospectively reviewed the sites of bulla development on preoperative CT and the rupture sites during VATS. Results: Of the 135 cases of right-sided SSP, the most common rupture site was the apical segment (31.9%), followed by the azygoesophageal recess (27.4%). Of the 75 cases on the left side, the most common rupture site was the apical segment (24.0%), followed by the anterior basal segment (17.3%). Conclusion: The azygoesophageal recess and parenchyma along the cardiac border were common sites of bulla development and rupture. Studies of respiratory lung motion to measure the pleural pressure at the lung surface could help to determine the relationship between cardiogenic and diaphragmatic movement and bulla formation or rupture.

통계적 가설검정을 이용한 중심형 버터플라이 밸브의 신뢰성 평가 (Reliability Evaluation of Concentric Butterfly Valve Using Statistical Hypothesis Test)

  • 장무성;최종식;최병오;김도식
    • 대한기계학회논문집A
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    • 제39권12호
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    • pp.1305-1311
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    • 2015
  • 버터플라이 밸브는 일반적으로 유량을 조절하기 위해 사되는 유량 제어 장치의 일종이다. 본 연구에서는 중심형 버터플라이 밸브의 개선 전후 제품에 대한 신뢰성 시험 데이터의 통계적 분석을 통하여 버터플라이 밸브에 대한 와이블 분포의 형상모수, 특성수명 및 $B_{10}$ 수명을 추정한다. 또한 통계적 가설검정을 이하여 개선 전후 제품의 형상모수와 척도모수에 대한 차이를 검토한다. 가설검정 결과로부터 개선 전후 제품의 형상모수는 유사하며, 척도모수는 증가함을 알 수 있었다. 이러한 분석결과는 향후 신뢰성 인증시험이나 제품에 대한 보증수명 설정에 유한 정보로 활용될 수 있다.

태양광 발전 시스템을 위한 무접점 전원장치 (A Contact-less Power Supply for Photovoltaic Power Generation System)

  • 이현관;공영수;김윤호;이기식;강성인;정봉근;김은수
    • 전력전자학회논문지
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    • 제11권3호
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    • pp.216-223
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    • 2006
  • 태양광 발전 시스템을 위한 무접점 변압기 적용 고효율 Full-bridge LLC 공진컨버터를 제안하였다. 제안된 LLC 공진컨버터는 직렬 커패시터와의 직렬공진을 위해 무접점 변압기의 누설인덕턴스와 자화인덕턴스를 이용하였다. 제안된 LLC 공진컨버터는 공진주파수 보다 높은 스위칭영역에서 연속 공진전류로 동작하는 기존 직렬공진 컨버터와는 달리 공진주파수 아래의 좁은 주파수 범위에서 불연속 공진전류로 동작한다. 이러한 불연속모드 공진전류 때문에 제안된 컨버터는 어떤 보조회로 없이 무접점 변압기 1차측 주스위칭 소자의 영 전압 스위칭(ZVS)과 2차측 다이오드의 영 전류 스위칭(ZCS)을 얻을 수 있고, 높은 전압이득특성을 갖는다. 본 논문에서는 무접점 변압기 적용 Full-bridge LLC 공진컨버터를 이용한 무접점 전원장치에 대한 이론적 해석 및 시뮬레이션을 통해 150W급 시제품을 제작하여 태양광 발전 전원시스템에 적용 실험한 결과를 서술했다.

닭의장풀의 분리표피에서 $H_2O_2$에 의한 기공 닫힘기작 (The Mechanism of Stomatal Closing by $H_2O_2$ in Epidermal Strips of Commelina communis L.)

  • 이준상;전방욱
    • 한국환경과학회지
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    • 제6권2호
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    • pp.125-131
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    • 1997
  • The mechanism of stomatal closing in response to $O_2$ was indirectly investigated by using $H_2O_2$ which is the intermediate product of $O_2$ metabolites. Stomata in epidermal strips close in response to $H_2O_2$. The effect of $H_2O_2$ on stomatal closing was dependent on the concentration of $H_2O_2$. 10 ppm $H_2O_2$ showed a clear effect on stomatal closing and 1000 ppm $H_2O_2$ induced complete stomatal closing after the treatment of 3 hours. Stomatal closing by $H_2O_2$ in intact leaf was also observed by measuring the diffusion resistance with porometer. It was found that the stomatal closing by $H_2O_2$ was not mediated by $Ca^{2+}$, and that was a different result observed in stomatal closing by water stress. Reversely, $Ca^{2+}$ showed a great inhibition on stomatal closing. The leakage of K+ in epidermal strips was doubled in response to $H_2O_2$ when it was campared to the control. 10 ppm $H_2O_2$ decreased photosynthetic activity. Fv/Fm representing the activity of Photosystem II was reduced about 4 % in 10 ppm $H_2O_2$ and 8 % in 100 ppm $H_2O_2$ In the treatment of 1.5 hour. However, stomatal closing by 10 ppm $H_2O_2$ was reduced about 56 %. According1y, it can be suggested that stomatal closing by $H_2O_2$ is related with the decrease of photosynthetic activity, but it was chiefly induced by the change of the membrane permeability. Key words Commelina communis, stomatal closing, $H_2O_2$, $Ca^{2+}$, photosynthesis.

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비선형 Tent-Map을 이용한 RFID 인증 프로토콜 설계 (Design of an RFID Authentication Protocol Using Nonlinear Tent-Map)

  • 한규광;임거수
    • 한국전자통신학회논문지
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    • 제9권10호
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    • pp.1145-1152
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    • 2014
  • RFID(Radio-Frequency IDentification)시스템은 무선으로 사물을 식별하는 기술로 물류, 운송, 유통, 재고관리 등과 같은 물품관리를 획기적으로 개선할 수 있는 새로운 방법이다. 그러나 무선을 사용하고 있는 RFID는 통신구간에 대한 보안의 취약성 때문에 정보 누출 및 변조 같은 위험성을 가지고 있다. 우리는 이런 RFID 통신 시스템에 복잡계의 대표적인 계인 Tent-Map을 적용하여 새로운 인증 프로토콜을 설계하였다. 복잡계의 대표적인 특징인 초기치 민감성과 불규칙성을 RFID의 Reader 와 Tag에 적용하여 보다 견고하고 간략한 인증시스템을 설계하였다. 본 논문에서 보인 복잡계를 이용한 RFID 인증 프로토콜 설계는 기존의 Hash 함수나 난수에 의존되었던 인증 시스템에 차별화된 새로운 방법으로 그 활용성을 검증하는데 그 목적이 있다.

Investigation of Hetero - Material - Gate in CNTFETs for Ultra Low Power Circuits

  • Wang, Wei;Xu, Min;Liu, Jichao;Li, Na;Zhang, Ting;Jiang, Sitao;Zhang, Lu;Wang, Huan;Gao, Jian
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권1호
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    • pp.131-144
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    • 2015
  • An extensive investigation of the influence of gate engineering on the CNTFET switching, high frequency and circuit level performance has been carried out. At device level, the effects of gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. It is revealed that hetero - material - gate CNTFET(HMG - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, and is more suitable for use in low power and high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the performance parameters of circuits have been calculated and the optimum combinations of ${\Phi}_{M1}/{\Phi}_{M2}/{\Phi}_{M3}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product(PDP). We show that, compared to a traditional CNTFET - based circuit, the one based on HMG - CNTFET has a significantly better performance (SNM, energy, PDP). In addition, results also illustrate that HMG - CNTFET circuits have a consistent trend in delay, power, and PDP with respect to the transistor size, indicating that gate engineering of CNTFETs is a promising technology. Our results may be useful for designing and optimizing CNTFET devices and circuits.