• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.34-39
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• 2011

Screen printing method is a common way to fabricate the crystalline silicon solar cell with low-cost and high-efficiency. The screen printing metallization use silver paste and aluminum paste for front and rear contact, respectively. Especially the rear contact between aluminum and silicon is important to form the back surface filed (Al-BSF) after firing process. BSF plays an important role to reduces the surface recombination due to $p^+$ doping of back surface. However, Al electrode on back surface leads to bow occurring by differences in coefficient of thermal expansion of the aluminum and silicon. In this paper, we studied the properties of mono crystalline silicon solar cell for rear electrode with aluminum and aluminum-boron in order to characterize bow and BSF of each paste. The 156*156 $m^2$ p-type silicon wafers with $200{\mu}m$ thickness and 0.5-3 ${\Omega}\;cm$ resistivity were used after texturing, diffusion, and antireflection coating. The characteristics of solar cells was obtained by measuring vernier callipers, scanning electron microscope and light current-voltage. Solar cells with aluminum paste on the back surface were achieved with $V_{OC}$ = 0.618V, JSC = 35.49$mA/cm^2$, FF(Fill factor) = 78%, Efficiency = 17.13%.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1113-1119
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• 2003

We used isopropanol which has low boiling point to prepare thin films at low temperature and changed mole concentration of zinc acetate from 0.3 to 1.3 mol/l. The structural, optical and electrical properties of ZnO thin films with Zn content were investigated. ZnO thin films highly oriented along the c-axis were obtained at Zn concentration of 0.7 mol/l. ZnO thin films with Zn concentration of 0.7 mol/l showed a homogeneous surface layer of nano structure. The transmittance of ZnO thin films by UV-vis. measurement was about 87% under the Zn concentration of 0.7 mol/l, but rapidly decreased over the 1.0 mol/l. The optical band gap energy was obtained from 3.07 to 3.22 eV which is very close to the band gap of bulk ZnO (3.2 eV). The electrical resistivity of ZnO thin films was about 150 $\Omega$-cm that shows little difference with Zn concentration. I-V curves of ZnO thin films exhibited typical ohmic contact properties.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.243-251
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• 1994

ITO(Indium Tin Oxide) film with thickness of 1500.angs. was prepared by an e-beam evaporator onto a glass and a p-type InP wafer (100) LEC grown Zn-doped p=2.3*10$\^$16/cm$\^$-3/), in which the components of ITO used for evaporation source were hot pressed pellets 1 mole% ln$\_$2/O$\_$3/+9 mole% SnO$\_$2/, and evaporated in O$\_$2/ ambient. The optimum conditions to preparation of ITO thin film were the substrate temperature of 350.deg. C, the injected oxygen pressure of 2*10$\^$-4/ torr, and the evaporation speed of 0.2-0.3.angs./sec, respectively. In these optimum conditions, the resistivity and the carrier concentration were 5.3*10$\^$-3/ .ohm.-cm, 6.5*10$\^$20/cm$\^$-3/, and the transmittance was over 80%. From the results of J-V measurements in ITO/p-InP structure solar cells, the higher pressure of injected oxygen, the more open circuit voltage. The efficiency of ITO/p-InP solar cell without the grid line contact, prepared by the optimum evaporation conditions, was 7.19%. By using the grid line contact, the efficiency, the open circuit voltage, the short circuit current density, the fill factor, the series resistance, and the shunt resistance were 8.5%, 0.47V, 29.48 mAcm$\^$-2/ , 61.35%, 3.ohm., and 26.6k.ohm., respectively.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.96-100
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• 2005

The planar Schottky diodes were fabricated and modeled to probe the device applicability of the cracked GaN epitaxial layer on a (111) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of $5.51{\times}10.5{\Omega}{\cdot}cm^{2}$ after annealing in an $N_{2}$ ambient at $700^{\circ}C$ for 30 sec. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But in photoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm, and UV/visible rejection ratio of about $10^{2}$. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulation with a proposed model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.450-450
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• 2006

Organic light-emitting diodes (OLED) as pixels for flat panel displays are being actively pursued because of their relatively simple structure, high brightness, and self-emitting nature [1, 2]. The top-emitting diode structure is preferred because of their geometrical advantage allowing high pixel resolution [3]. To enhance the performance of TOLEDs, it is important to deposit transparent top cathode films, such as transparent conducting oxides (TCOs), which have high transparency as well as low resistance. In this work, we report on investigation of the characteristics of an indium tin oxide (ITO) cathode electrode, which was deposited on organic films by using a radio-frequency magnetron sputtering method, for use in top-emitting organic light emitting diodes (TOLED). The cathode electrode composed of a very thin layer of Mg-Ag and an overlaying ITO film. The Mg-Ag reduces the contact resistivity and plasma damage to the underlying organic layer during the ITO sputtering process. Transfer length method (TLM) patterns were defined by the standard shadow mask for measuring specific contact resistances. The spacing between the TLM pads varied from 30 to $75\;{\mu}m$. The electrical properties of ITO as a function of the deposition and annealing conditions were investigated. The surface roughness as a function of the plasma conditions was determined by Atomic Force Microscopes (AFM).

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.197-201
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• 2013

This paper describes the fabrication and characterization of graphene based carbon dioxide ($CO_2$) gas sensors. Graphene was synthesized by thermal decomposition of SiC. The resistivity $CO_2$ gas sensors were fabricated by pure graphene and graphene decorated Au nanoparticles (NPs). The Au NPs with size of 10 nm were decorated on graphene. Au electrode deposited on the graphene showed Ohmic contact and the sensors resistance changed following to various $CO_2$ concentrations. Resulting in resistance sensor using pure graphene can detect minimum of 100 ppm $CO_2$ concentration at $50^{\circ}C$, whereas Au/graphene can detect minimum 2 ppm $CO_2$ concentration at same at $50^{\circ}C$. Moreover, Au NPs catalyst improved the sensitivity of the graphene based $CO_2$ sensors. The responses of pure graphene and Au/graphene are 0.04% and 0.24%, respectively, at $50^{\circ}C$ with 500 ppm $CO_2$ concentration. The optimum working temperature of $CO_2$ sensors is at $75^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.310-310
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• 2013

본 연구에서는 Titanium (Ti) source/drain 전극 접합이 차세대 비정질 InGaZnO (IGZO) 기반 박막형 트랜지스터에 미치는 영향을 화학적, 구조적, 전기적 특성 분석을 통하여 관찰하고 Ti/IGZO 접합 특성을 설명할 수 있는 메커니즘을 제시하였다. IGZO 기반 박막형 트랜지스터 소자의 구동 특성은 transmission line method (TLM) 패턴 공정을 이용하여 정량적으로 분석되었다. 비정질 IGZO 기반의 박막형 트랜지스터에서 Ti source/drain 전극 접합에 의한 구동 특성 변화 및 영향을 확인하기 위하여 금속/산화물 계면 반응성이 낮은 silver (Ag) source/drain 전극이 reference로 비교되었으며, 그 결과 Ti source/drain 전극 접합이 적용된 비정질 IGZO 트랜지스터의 경우 Ti 금속과 IGZO 산화물 계면에 형성되는 열역학적으로 안정한 $TiO_x$ 층의 형성에 의해 VT ($-{\Delta}0.52V$) shift 및 saturation mobility ($8.48cm^2$/Vs) 상승됨을 확인하였다. 뿐만 아니라 TLM 패턴을 이용한 IGZO 트랜지스터의 전기적 변수 도출 및 수치적 해석으로부터 $TiO_x$ 계면층 형성이 Ti 금속과 비정질 InGaZnO 계면에서의 effective contact resistivity를 효과적으로 낮출 수 있음을 확인하였다. Ti source/drain 전극 접합에 의해 발생되는 $TiO_x$ 계면층의 화학적, 구조적 특성과 $TiO_x$ 계면층 생성에 의한 소자 특성 변화를 연관시켜 해석함으로써, IGZO 기반 박막형 트랜지스터에서의 Ti source/drain 전극 접합이 비정질 IGZO 기반 박막형 트랜지스터에 미치는 영향을 설명하였다.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1518-1520
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• 2001

Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 mV and 42.6 mA/$cm^2$ respectively.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2005.11a
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• pp.141-144
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• 2005

Sensing and interfacial evaluation of Ni nanowire strands/polymer composites were investigated using Electro-micromechanical technique. Electro-micromechanical techniques can be used as sensing method for micro damage, loading, temperature of interfacial properties. Using Ni nanowire strands/silicone composites with different content, load sensing response of electrical contact resistivity was investigated under tensile and compression condition. The mechanical properties of Ni nanowire strands with different type/epoxy composites were measured using uniformed cyclic loading and tensile test. Ni nanowire strands/epoxy composites showed humidity and temperature sensing within limited ranges, 20 vol% reinforcement. Some new information on temperature and humidity sensing plus loading sensing of Ni nanowire strands/polymer composites could be obtained from the electrical resistance measurement as a new concept of the nondestructive interfacial evaluation.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.298-303
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• 2000

We evaluated the electric properties of Bi-2223 jointed tapes processed by both resistive- and supercondcuting-joint methods. For the resistive-joint, filler materials of wood metal, Pb/Sn, In, and silver paste were used, whereas, for the superconductive-joint, the lap joint method were used. In the resistive-joint tape, it was observed that the electrical properties such as current transport property, n-value, and contact resistance of the tape were significantly related to the resistivity of filler materials. On the other hand, in the superconducting-joint tape, the current transport property was dependent on the uniaxial pressure. Specifically, the current transport property varied 50 to 80% with uniaxial pressure, probably due to the irregular microstructure in the transition region.