• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.5 no.1
• /
• pp.13-15
• /
• 2004

The current driven in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure play a significant role and degrade the device performance. These other resistances need to be less than 15％ of the channel resistance. To achieve the requirements, we should investigate the methodology of separation and quantification of those resistances. In this paper, we developed the extraction method of resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that forms under the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
• /
• v.26 no.1
• /
• pp.32-37
• /
• 2014

The thermal contact resistance (TCR) is one of the important resistance components in cryogenic systems. Cryogenic measurement devices using a cryocooler can be affected by TCR because the device has to consist of several metal components that are in contact with each other for heat transfer to the specimen without a cryogen. Therefore, accurate measurement and understanding of TCR is necessary for the design of cryogenic measurement devices using a cryocooler. The TCR occurs at the interface between metals and it can be affected by variable factors, such as the roughness of the metal surface, the contact area and the contact pressure. In this study, we designed a TCR measurement system at variable temperature using a cryocooler as a heat sink. Copper was selected as a specimen in the experiment because it is widely used as a heat transfer medium in cryogenic measurement devices. We measured the TCR between Cu and Cu for various temperatures and contact pressures. The effect of the interfacial materials on the TCR was also investigated.

• Proceedings of the KSME Conference
• /
• 2004.11a
• /
• pp.1740-1745
• /
• 2004

A simplified resistor network model for electrical and mass transport in anode-supported planar solid oxide fuel cell (SOFC) was constructed in order to investigate the effect of interconnect rib geometry on the cell performance. For accurate potential calculation, activation and concentration over-potentials at the electrode/electrolyte interfaces were fully considered in this calculation. When contact resistance was not considered, the optimum interconnect rib length were calculated to be $0.1{\sim}0.2$ mm for 2 mm half unit cell for given operation conditions and properties. However, with realistic contact resistance, the interconnect rib length should be increased to provide larger contact area and thus to obtain better performance.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.19 no.1
• /
• pp.193-201
• /
• 1995

The role of thermal contact resistance between a casting and a metal mold as well as natural convection in the melt during solidification of a pure metal is numerically studied. Numerical simulation is performed for a rectangular cavity using the coordinate transformation by boundary-fitted coordinate and pure aluminum is used as the phase- change material. The influences of thermal contact resistance on the interface shape and position, solidified volume fraction, temperature field and local heat transfer are investigated.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 1996.04a
• /
• pp.635-640
• /
• 1996

A thermo-elastic system in the production machine has highly nonlinear dynamic characteristics. In general, the finite element method is utilized for accurate analysis. However, it requires large computing time. Thus, thermo-elastic systems are usuallymodeled as electric and fluid system using lumped para,eter. In this paper. we propose the bondgraph model and transient simulation methodology of thermo-elastic system in consideration of various boundary and joint contact conditions. Consequently, the proposed method ensures a possibility of its on-line compensation about undesirable phenomena by using real time estimate process and electronic cooling device for thermal appropriate behavior. Thermo-elastic model consisting of bush and shaft including contact condition is presented.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2007.06a
• /
• pp.627-628
• /
• 2007

• Journal of the Korean Vacuum Society
• /
• v.12 no.4
• /
• pp.218-227
• /
• 2003

Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

• Journal of the Korean Vacuum Society
• /
• v.10 no.2
• /
• pp.219-224
• /
• 2001

Pd/Ge/Ti/Pt ohmic contact to n-type InCaAs was investigated. Minimum specific contact resistivity of $3.7\times10^{-6}\; \Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $400^{\circ}C$ for 10 seconds. This was related to the formation of Pd-Ge compounds and the in-diffusion of Ge atoms to InGaAs surface. However, the specific contact resistivity increased slightly to $low-10^5\; \Omega\textrm{cm}^2$ in the case of longer annealing time. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained after annealing at high temperature. Therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.

• Journal of the Korean Vacuum Society
• /
• v.11 no.1
• /
• pp.43-49
• /
• 2002

Pd/Ge/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of $1.1\times10^{-6}\Omega\textrm{cm}^2$ was achieved after annealing at $400^{\circ}C$/10sec, and a ohmic performance was degraded at higher annealing temperature due to the chemical reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact($high-10^{-6};{\Omega}\textrm{cm}^2$) were maintained. This ohmic contact system is expected to be a promising candidate for compound semiconductor devices.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2013.05a
• /
• pp.184-184
• /
• 2013

본 연구에서는 금 합금 도금층의 접촉저항에 미치는 첨가 합금원소의 영향을 조사하였다. 또한 표면실장을 위한 솔더링 공정에서 도금층에 가해지는 열이력이 접촉저항 값에 미치는 영향을 조사하기 위해서, $260^{\circ}C$에서 thermal aging을 실시한 후, 접촉저항을 측정하였다. 합금원소의 종류에 따라서 thermal aging후의 접촉저항 값이 변하는 요인을 조사하기 위해서 XPS를 이용하여 표면분석을 실시하였다.