• Title/Summary/Keyword: constant power

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Thorough Analysis of Chinese Cultural Heritage Based on Pyohaerok (由 《漂海録》 看中国文化传承的分析)

  • Choi, Chang Won
    • Industry Promotion Research
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    • v.1 no.2
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    • pp.121-128
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    • 2016
  • Cultural heritage means a great lot to a nation's social system and its people's behavior consciousness and plays an important role in its self-development and improvement. It is essential for a nation's self-education and renewal. Improper cultural heritage will be disastrous because it may fall a nation into a loss of terrible chaos. Only the proper cultural heritage can make it always self-awaking, self-correcting and remaining vital in life. This paper, from the perspective of Choi Bu's Pyohaerok, makes a thorough analysis of the unbalance heritage of Chinese ancient culture for thousands of years. For example, many fine traditions gradually vanished in our actual life or only take half their life in heritage nowadays, such as our ancient broad and profound Confucian etiquette, ancient exquisite brocade art and architecture, ancient advanced ship-building technology and many other advanced numerous technological inventions; however, too much unwanted cultural rubbish keeps constant prevailing and takes repeated successions in the life, such as the heavy-form-and-light-content management mode, borrowing power to do evil, neglecting technological inventions long time and generally believing in ghost theory,etc.. This paper mainly focuses on the partial successions of the bad cultural heritage and its bad influence on the country, and concludes that it is just that that makes the country more and more backward. Therefore, the paper makes some pondering over these issues and proposes some related ideas of country-building to attract others participation to deal with them.

Design of a CMOS IF PLL Frequency Synthesizer (CMOS IF PLL 주파수합성기 설계)

  • 김유환;권덕기;문요섭;박종태;유종근
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.8
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    • pp.598-609
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    • 2003
  • This paper describes a CMOS IF PLL frequency synthesizer. The designed frequency synthesizer can be programmed to operate at various intermediate frequencies using different external LC-tanks. The VCO with automatic amplitude control provides constant output power independent of the Q-factor of the external LC-tank. The designed frequency divider includes an 8/9 or 16/17 dual-modulus prescaler and can be programmed to operate at different frequencies by external serial data for various applications. The designed circuit is fabricated using a 0.35${\mu}{\textrm}{m}$ n-well CMOS process. Measurement results show that the phase noise is 114dBc/Hz@100kHz and the lock time is less than 300$mutextrm{s}$. It consumes 16mW from 3V supply. The die area is 730${\mu}{\textrm}{m}$$\times$950${\mu}{\textrm}{m}$.

Application of Pine Peroxidase to the Amperometric Determination of Hydrogen Peroxidase (과산화수소의 전류법적 정량을 위한 소나무 과산화효소의 활용)

  • Yoon, Kil-Joong
    • Journal of the Korean Chemical Society
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    • v.57 no.3
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    • pp.329-334
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    • 2013
  • A pine needle-embedded graphite enzyme electrode, of which bonding agent is CSM rubber, was newly designed and its electrochemistry was studied based on the amperometry. It involved a ground green leaves of pine tree as a zymogen together with electrochemical mediator, ferrocene within the paste. The plots of ln($i(1-e^{nf{\eta}})$) vs. ${\eta}$ and Lineweaver-Burk at the low potential (-100 to -500 mV) showed good linearities indicating that the amperometric response is by the catalytic power of pine peroxidase. Electrochemical parameters obtained, symmetry factor (${\alpha}$, 0.17), limiting current ($i_1$, 1.99 $A/cm^2$), exchange current density ($i_0$, $5.86{\times}10^{-5}\;A/cm^2$), Michaelis constant ($K_M$, $1.68{\times}10^{-3}$ M) and many others showed that pine peroxidase discharges the role of catalyst quantitatively on the electrode surface. Those proved that the practical use of pine peroxidase is promising in place of the marketed.

Sensitivity Analysis of Core Neutronic Parameters in Electron Accelerator-driven Subcritical Advanced Liquid Metal Reactor

  • Ebrahimkhani, Marziye;Hassanzadeh, Mostafa;Feghhi, Sayed Amier Hossian;Masti, Darush
    • Nuclear Engineering and Technology
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    • v.48 no.1
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    • pp.55-63
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    • 2016
  • Calculation of the core neutronic parameters is one of the key components in all nuclear reactors. In this research, the energy spectrum and spatial distribution of the neutron flux in a uranium target have been calculated. In addition, sensitivity of the core neutronic parameters in accelerator-driven subcritical advanced liquid metal reactors, such as electron beam energy ($E_e$) and source multiplication coefficient ($k_s$), has been investigated. A Monte Carlo code (MCNPX_2.6) has been used to calculate neutronic parameters such as effective multiplication coefficient ($k_{eff}$), net neutron multiplication (M), neutron yield ($Y_{n/e}$), energy constant gain ($G_0$), energy gain (G), importance of neutron source (${\varphi}^*$), axial and radial distributions of neutron flux, and power peaking factor ($P_{max}/P_{ave}$) in two axial and radial directions of the reactor core for four fuel loading patterns. According to the results, safety margin and accelerator current ($I_e$) have been decreased in the highest case of $k_s$, but G and ${\varphi}^*$ have increased by 88.9% and 21.6%, respectively. In addition, for LP1 loading pattern, with increasing $E_e$ from 100 MeV up to 1 GeV, $Y_{n/e}$ and G improved by 91.09% and 10.21%, and $I_e$ and $P_{acc}$ decreased by 91.05% and 10.57%, respectively. The results indicate that placement of the Np-Pu assemblies on the periphery allows for a consistent $k_{eff}$ because the Np-Pu assemblies experience less burn-up.

Performance of Detection Probability with Adaptive Threshold Algorithm for CR Based on Ad-Hoc Network (인지 무선 기반 애드 혹 네트워크에서 적응적 임계치 알고리즘을 이용한 센싱 성능)

  • Lee, Kyung-Sun;Kim, Yoon-Hyun;Kim, Jin-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.5
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    • pp.632-639
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    • 2012
  • Ad-hoc networks can be used various environment, which it is difficult to construct infrastructures, such as shadowing areas, disaster areas, war area, and so on. In order to support to considerable and various wireless services, more spectrum resources are needed. However, efficient utilization of the frequency resource is difficult because of spectrum scarcity and the conventional frequency regulation. Ad-hoc networks employing cognitive radio(CR) system that guarantee high spectrum utilization provide effective way to increase the network capacity. In conventional CR based ad-hoc network, it uses constant threshold value to detect primary user signal, so the results become not reliable. In this paper, to solve this problem, we apply adaptive threshold value to the CR based ad-hoc network, and adaptive threshold is immediately changed by SNR(Signal to Noise Ratio). From the simulation results, we confirmed that proposed algorithm has the greatly better detection probabilities than conventional CR based ad-hoc network.

Design of a 6~18 GHz 8-Bit True Time Delay Using 0.18-㎛ CMOS (0.18-㎛ CMOS 공정을 이용한 6~18 GHz 8-비트 실시간 지연 회로 설계)

  • Lee, Sanghoon;Na, Yunsik;Lee, Sungho;Lee, Sung Chul;Seo, Munkyo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.11
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    • pp.924-927
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    • 2017
  • This paper presents a 6~18 GHz 8-bit true time delay (TTD) circuit. The unit delay circuit is based on m-derived filter with relatively constant group delay. The designed 8-bit TTD is implemented with two single-pole double-throw (SPDT) switches and seven double- pole double-throw (DPDT) switches. The reflection characteristics are improved by using inductors. The designed 8-bit TTD was fabricated using $0.18{\mu}m$ CMOS. The measured delay control range was 250 ps with 1 ps of delay resolution. The measured RMS group delay error was less than 11 ps at 6~18 GHz. The measured input/output return losses are better than 10 dB. The chip consumes zero power at 1.8 V supply. The chip size is $2.36{\times}1.04mm^2$.

Thermal and Stress Analysis of Power IGBT Module Package by Finite Element Method (유한요소법에 의한 대전력 IGBT 모듈의 열.응력해석)

  • 김남균;최영택;김상철;박종문;김은동
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.4
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    • pp.23-33
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    • 1999
  • A finite element method was employed fort thermal and stress analyses of an IGBT module of 3-phase full bridge. The effect of material parameters such as substrate material, substrate area, solder thickness on the temperature and stress distributions of the module packages has been investigated. Thermal analysis results have also been compared by setting of boundary conditions such as equivalent heat transfer coefficient or constant temperature at a base metal surface of the package. The increase of ceramic substrate area up to 3 times does little contribution to the reduction(8.9%) of thermal resistance, while contributed a lot to the reduction(60%) of thermal stress. Thicker solder resulted in higher thermal resistance but did slightly reduced thermal stresses. It is revealed by the stress analysis that maximum stress was induced at the region of copper pads which are bonded with ceramic substrate.

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Discharging Voltage Control with Error Detecting for Search light of Ship (선박용 탐사조명 전원장치의 방전개시전압 제어와 조명 이상검출)

  • Park, Noh-Sik;Kwon, Soon-Jae;Lee, Dong-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.10
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    • pp.8-17
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    • 2008
  • This paper presents a stable lighting method for HID lamp for ship from initial discharging current limit with discharging voltage control. The output voltage of the proposed control scheme is boosted for ignition, and the charging voltage is decreased by the resistor discharging. The proposed controller fires the initial discharge at the designed discharging voltage to limit the discharge current. After the discharging, constant current controller is used for brightness in steady state. The proposed control scheme can limit the initial discharge current using the starting point control without a complex voltage controller. so it can improve the life-time of HID lamp and get a stable discharge from restricted the initial discharge current. In order to improve the protection of the system, a simple instantaneous error detecting circuit for open state and short state of HID lamp is used. The proposed error detecting of HID lamp can protect the power system of lamp control. The effectiveness of the proposed controller is verified from the experiments of practical 2.5[kW] HID search light for ship.

Design and Fabrication of a Active Resonator Oscillator using Active Inductor and Active Capacitor with Negative Resistance (부성저항 특성을 갖는 능동 인덕터와 능동 캐패시터를 이용한 능동 공진 발진기 설계 및 제작)

  • 신용환;임영석
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.8
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    • pp.1591-1597
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    • 2003
  • In this paper, Active Resonator Oscillator using active inductor and active capacitor with HEMTs(agilent ATF­34143) is designed and fabricated. Active inductor with ­25$\Omega$ and 2.4nH in 5.5GHz frequency band and Active capacitor with ­14$\Omega$ and 0.35pF is designed. Active Resonator Oscillator for LO in ISM band(5.8GHz) is designed with active inductor and active capacitor. Active Resonator Oscillator has been simulated by Agilent ADS 2002C. Active Resonator oscillator implemented on the substrate which has the relative dielectric constant of 3.38, the height of 0.508mm, and metal thickness of 0.018mm. This Active Resonator Oscillator shows the oscillation frequency of 5.68GHz with the output power of ­3.6㏈m and phase noise of ­81㏈c/Hz at the offset frequency of 100KHz.

Characteristics of c-axis oriented PLT thin films and their application to IR sensor (c-축 배양된 PLT 박막의 특성 및 IR센서 응용)

  • Choi, B.J.;Park, J.H.;Kim, Y.J.;Kim, K.W.
    • Journal of Sensor Science and Technology
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    • v.5 no.3
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    • pp.87-92
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    • 1996
  • The PLT thin films on (100) cleaved MgO single crystal substrate have been fabricated by rf magnetron sputtering using a PbO-rich target. The dependence of physical and electrical properties on the degree of c-axis orientation has been studied. The degree of c-axis orientation of PLT thin films depends on fabrication conditions. Fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, gas ratio of $Ar/O_{2}$, and rf power density were $640^{\circ}C$, 10 mTorr, 10 seem, and $1.7\;W/cm^{2}$, respectively. In these conditions, the PLT thin film showed the Pb/Ti ratio of 1/2 at the surface, the resistivity of $8{\times}10^{11}{\Omega}{\cdot}cm$, and dielectric constant of 110. The pyroelectric infrared sensors with these PLT thin films showed the peak to peak voltage of 450 m V and signal to noise ratio of 7.2.

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