• Analytical Science and Technology
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• v.13 no.1
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• pp.66-71
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• 2000

The intercalated compound of dodecanesulfonate into hydrated cobalt was synthesized. The compound shows a layered structure as determined by high temperature X-ray diffraction. The layer distance of the product is increased from $19.1{\AA}$ to $34.7{\AA}$ by increasing the temperature from $30^{\circ}C$ to $200^{\circ}C$. We can control the layer distance by varying the temperature which is accomplished by changing from the monolayer to the bilayer structure of the intercalated dodecanesulfonate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.256-260
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• 2014

This study was carried on the phenomena in reactivity with the clay surface according to the thickness of the cobalt component coating. In the coated specimen, it was observed that the cobalt component was spreaded to diffuse with a constant thickness from the surface of it and the diffusion layer at the white porcelain soil was more increased with the increase of the amount of cobalt sulfate than at the celadon porcelain one. It was evaluated that the color of the surface on the coated specimen at the white porcelain soil was changed from grayish blue to blue and the $L^*$ value was decreased from 51.78 to 37.61 and also in the case of the coated specimen in celadon porcelain soil, $L^*$ value was from 53.91 to 38.93 and the color was from dark olive gray to dark gray. The physical properties of the specimen were characterized by X-ray diffraction, Scanning electron microscope, Dilatometer, TG-DTA, UV-vis spectrophotometer and HRDPM.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.2
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• pp.409-413
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• 2010

We fabricated 10 nm-thick cobalt silicide($CoSi_2$) as a buffer layer on a p-type Si(100) substrate to investigate the possibility of GaN epitaxial growth on $CoSi_2/Si(100)$ substrates. We deposited 500 nm-GaN on the cobalt silicide buffer layer at low temperature with a PA-MBE (plasma assisted-molecular beam epitaxy) after the $CoSi_2/Si$ substrates were cleaned by HF solution. An optical microscopy, AFM, TEM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. For the GaN samples without HF cleaning, they showed no GaN epitaxial growth. For the GaN samples with HF cleaning, they showed $4\;{\mu}m$-thick GaN epitaxial growth due to surface etching of the silicide layers. Through XRD $\omega$-scan of GaN <0002> direction, we confirmed the cyrstallinity of GaN epitaxy is $2.7^{\circ}$ which is comparable with that of sapphire substrate. Our result implied that $CoSi_2/Si(100)$ substrate would be a good buffer and substrate for GaN epitaxial growth.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.15-15
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• 1999

• Environmental Engineering Research
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• v.18 no.3
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• pp.145-150
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• 2013

Optimal preparation guidelines of a cathode catalyst layer by non-precious metal catalysts were evaluated based on electrochemical performance in single-chamber microbial fuel cells (MFCs). Experiments for catalyst loading rate revealed that iron(II) phthalocyanine (FePc) can be a promising alternative, comparable to platinum (Pt) and cobalt tetramethoxyphenylporphyrin (CoTMPP), including effects of substrate concentration. Results showed that using an optimal FePc loading of $1mg/cm^2$ was equivalent to a Pt loading of $0.35mg/cm^2$ on the basis of maximum power density. Given higher loading rates or substrate concentrations, FePc proved to be a better alternative for Pt than CoTMPP. Under the optimal loading rate, it was further revealed that 40 wt% of FePc to carbon support allowed for the best power generation. These results suggest that proper control of the non-precious metal catalyst layer and substrate concentration are highly interrelated, and reveal how those combinations promote the economic power generation of single-chamber MFCs.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2004.06a
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• pp.32-42
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• 2004

Recently, plasma surface-cleaning or surface-etching techniques have been focused in respect of the decontamination of spent or used nuclear parts and equipment. In this study the removal rate of metallic cobalt surface is experimentally investigated via its surface etching rate with a $CF_4-o_2$mixed gas plasma. Experimental results reveal that a mixed etchant gas with about 80% $CF_4$-20% $O_2$ (molar) gives the highest reaction rate and the rate reaches 0.06 ${\mu}m$/min at $380^{\circ}C$ and ion-assisted etching dramatically enhances the surface reaction rate. With a negative 300 V DC bias voltage applied to the substrate, the surface reaction initiation temperature lowers and the rate increases about 20 times at $350^{\circ}C$ and up to 0.43 ${\mu}m$/min at $380^{\circ}C$, respectively. Surface morphology analysis confirms the etching rate measurements. Auger spectrum analysis clearly shows the adsorption of fluorine atoms on the reacted surface. From the current experimental findings and the results discussed in previous studies, mechanistic understanding of the surface reaction, fluorination and/or fluoro-carbonylation reaction, is provided.

• Restorative Dentistry and Endodontics
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• v.8 no.1
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• pp.61-68
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• 1982

This study was undertaken to compare the histopathological effects of the fractionated doses of 2,400, 4,800 and 7,200 rads of Cobalt-60 irradiation on the teeth of the sixty eight rats (Wester strain), weighing approximately 130gm. They were devided into four groups; no irradiation as a control (Group I) and others (Group II, III, and IV) which received different doses of radiation using 1.25 Mev RAC-120 Cobalt-60 Teletherapy Unit with exposure dose rate 69 rads/min, TSD 80cm. Experimental animals received 600 rads every three days until the total dosage of their groups were reached. Experimental animals were sacrified at the 1st day, 1st, 2nd, 3rd, 4th, 5th and 6th week irradiation. The following histopathologic findings were obtained: 1. The Group II, received 2,400 rads, showed no histopamologic changes essentially same as those of the control Group. 2. In the Groups III and IV, received 4,800 rads and 7,200 rads, disarray of the normal palasading arrangement of the odontoblastic cells, vacuolar degeneration in the odontoblastic layer, osteodentin and dentinal niches in the anterior teeth were observed. 3. There were no distinct changes in the posterior teeth in the Groups III and IV. 4. The ameloblast cells seemed to be less sensitive to radiation damage than the odontoblast cells.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.656-662
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• 2006

We fabricated thermal evaporated 10 nm-$Ni_xCo_{1-x}$ (x=0.2, 0.5 and 0.8) /(poly)Si films to form nanothick cobalt nickel composite silicides by a rapid thermal annealing at $700{\sim}1100^{\circ}C$ for 40 seconds. A field emission scanning electron microscope and a micro-Raman spectrometer were employed for microstructure and silicon residual stress characterization, respectively. We observed self-aligned micro-pinholes on single crystal silicon substrates silicidized at $1100^{\circ}C$. Raman silicon peak shift indicates that the residual tensile strain of $10^{-3}$ in single crystal silicon substrates existed after the silicide process. We propose thermal stress from silicide exothermic reaction and high temperature silicidation annealing may cause the pinholes. Those pinholes are expected to be avoided by lowering the silicidation temperature. Our results imply that we may use our newly proposed composite silicides to induce the appropriate strained layer in silicion substrates.

• Journal of the Korean Electrochemical Society
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• v.14 no.2
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• pp.117-124
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• 2011

We demonstrate a new surface modification of high-voltage lithium cobalt oxide ($LiCoO_2$) cathode active materials for lithium-ion batteries. This approach is based on exploitation of a polarity-tuned gel polymer electrolyte (GPE) coating. Herein, two contrast polymers having different polarity are chosen: polyimide (PI) synthesized from thermally curing 4-component (pyromellitic dianhydride/biphenyl dianhydride/phenylenediamine/oxydianiline) polyamic acid (as a polar GPE) and ethylene-vinyl acetate copolymer (EVA) containing 12 wt% vinyl acetate repeating unit (as a less polar GPE). The strong affinity of polyamic acid for $LiCoO_2$ allows the resulting PI coating layer to present a highly-continuous surface film of nanometer thickness. On the other hand, the less polar EVA coating layer is poorly deposited onto the $LiCoO_2$, resulting in a locally agglomerated morphology with relatively high thickness. Based on the characterization of GPE coating layers, their structural difference on the electrochemical performance and thermal stability of high-voltage (herein, 4.4 V) $LiCoO_2$ is thoroughly investigated. In comparison to the EVA coating layer, the PI coating layer is effective in preventing the direct exposure of $LiCoO_2$ to liquid electrolyte, which thus plays a viable role in improving the high-voltage cell performance and mitigating the interfacial exothermic reaction between the charged $LiCoO_2$ and liquid electrolytes.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.738-741
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• 2000

Univorm epitaxial $CoSi_2$layers have been grown in situ on a (100) Si substrate at temperatures near$ 600^{\circ}C$ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt, (Co(η(sup)5-C(sub)5H(sub)5) ($CO_2$). The growth kinetics of an epitaxial $CoSi_2$layer on al Si(100) substrate was investigated at temperatures ranging from 575 to $650^{\circ}C$. In initial deposition stage, plate-like discrete $CoSi_2$spikes were nucleated along the <111> directions in (100) Si substrate with a twinned structure. The discrete $CoSi_2$plates with both {111} and (100) planes grew into an epitaxial layer with a flat interface on (100) Si. For epitaxial $CoSi_2$growth on (100) Si, the activation energy of the parabolic growth was found to be 2.82 eV. The growth rate seems to be controlled by the diffusion of Co through the $CoSi_2$layer.