• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.103-106
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• 2002

We prepared $Co_{77}Cr_{20}Ta_{3}$ thin film with Facing Targets Sputtering Apparatus. which can deposit a high quality thin film CoCrTa magnetic layer for Perpendicular magnetic recording media. In order to obtain Good Crystal orientation of CoCrTa thin films. We prepared Thin Films on slide glass substrate. The thickness of Buffer-layer were varied from 10 to 50 nm and Magnetic layer thickness fixed 100[nm]. input current was varied from 0.2[A] to 0.5[A]. Substrate temperature was varied from room temperature to ${250^{\circ}C}$ respectively. The crystal orientation of the CoCrTa film were examined with XRD. Introduce Buffer-layer thin films showed improvement of dispersion angle of c-axis orientation (${\Delta\theta}_{50}$).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.245-245
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• 2016

본 연구에서는 선형 대향 타겟 스퍼터 (Linear Facing Target Sputtering: LFTS) 시스템을 이용하여 ITO와 Ti doped $In_2O_3$ (TIO) 타겟을 Co-sputtering한 InSnTiO 투명 전극의 전기적, 광학적 특성을 연구하였다. InSnTiO 투명전극의 전기/광학적 및 구조적 특성은 Hall measurement, UV/Vis spectrometry, X-ray Diffraciton 분석법을 통해 최적화 하였고, DC power, substrate to target distance (TSD), target to target distance (TTD), ambient treatment 변수 조절을 통해 최적화된 LFTS InSnTiO 투명전극을 제작하였다. LFTS 공정을 이용한 InSnTiO 투명전극의 성막 공정 중 DC파워와 공정압력 변화에 따른 구조적, 표면적 특성 변화는 Field-Emission Scanning Electron Microscopy (FE-SEM) 과 X-ray Diffractometer (XRD) 분석을 통해 관찰하였다. 이렇게 증착된 InSnTiO 투명전극은 급속열처리 시스템으로 (Rapid Thermal Annealing system) 후열처리를 진행하여 투과도의 향상과 면저항의 감소를 확인하였다. 본 연구에서는 다양한 분석을 통해 Co-sputtering한 InSnTiO 박막의 특성과 다양한 장점을 소개한다.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.441-447
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• 1996

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.208-211
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• 2000

We prepared Co-Cr-Ta and Co-Cr-Ta/Ti thin film for perpendicular magnetic recording media by facing targets sputtering system (FTS system). Ti underlayer effects on crystallographic and magnetic characteristics of Co-Cr-Ta perpendicular magnetic recording media have been investigated. Crystallgraphic and magnetic characteristic of prepared thin films were evaluated by x-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement. The coercivity and anisotropy field increase by introduced Ti underlayer when substrate temperature is higher than 150$^{\circ}C$. The c-axis dispersion angle and grain size of Co-Cr-Ta/Ti thin film is decrease than Co-Cr-Ta when substrate temperature is higher than 100$^{\circ}C$. Consequently, the use of a Ti underlayer highly orientated can be improved crystallographic and magnetic characteristics of Co-Cr -Ta perpendicular media layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.64.2-64.2
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• 2011

Recently, Silicon Germanium (SiGe) alloys have been received considerable attention for their great potentials in advanced electronic and optoelectronic devices. Especially, microcrystalline SiGe is a good channel material for thin film transistor due to its advantages such as narrow and variable band gap and process compatibility with Si based integrated circuits. In this work, microcrystalline silicon-germanium films (${\mu}c$-SiGe) were deposited by DC/RF magnetron co-sputtering method using Si and Ge target on Corning glass substrates. The film composition was controlled by changing DC and RF powers applied to each target. The substrate temperatures were changed from $100^{\circ}C$ to $450^{\circ}C$. The microstructure of the thin films was analyzed by x-ray diffraction (XRD) and Raman spectroscopy. The analysis results showed that the crystallinity of the films enhances with increasing Ge mole fraction. Also, crystallization temperature was reduced to $300^{\circ}C$ with $H_2$ dilution. Hall measurements indicated that the electrical properties were improved by Ge alloying.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1115-1122
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• 1994

ZT/PZT/ZT multi-layered thin films were deposited on silicon substrate by co-sputtering method for FEMFET device application. Effects of Pb/(Zr+Ti) ratio, films thickness, annealing conditions and substrate temperature on the ferroelectric behavior of the multi-layered films were studied. The best memory device characteristics with leakage current of 2$\times$10-8 A/$\textrm{cm}^2$ and breakdown field of about 1 MV/cm could be obtained with ZT(250 $\AA$) / PZT(1000 $\AA$)/ZT(750 $\AA$) multi-layered thin film deposited at 35$0^{\circ}C$ and post-annealed at $700^{\circ}C$ for 120 sec by RTA(Rapid Thermal Annealing).

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.76.2-76.2
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• 2007

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.578-581
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• 1999

The Co-Cr-Ta films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrates. In this study, we investigated the effect underlayers on the growths layers of Co-Cr-Ta recording layers. The Co-Cr-Ta/Ti(CoCr) double layers were deposited with sputter gas pressure$(P_N, 0.3-1mTorr)$ by using FTS apparatus at temperature of$40^{\circ}C~-300^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry(XRD) and vibrating sample magnetometer(VSM), respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.492-495
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• 2000

In order to develop an ultra-thin CoCr perpendicular magnetic recording layer, we prepared CoCrTa/Ti double layer for perpendicular magnetic recording media by new facing targets sputtering system, Crystallgraphics and magnetic characteristics of CoCrTa on underlayer substrate temperature have been investigated. Crystallgraphic and magnetic characteristic of thin films were evaluated by X-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and atomic force microscopy(AFM). The coercivity and anisotropy field was increased by increasing under layer substrate temperature, c-axis orientation of CoCrTa magnetic recording layer was improved 8$^{\circ}$ to 5.6$^{\circ}$when under layer substrate temperature was 250[$^{\circ}C$]. Also, through annealing effect for CoCrTa/Ti double layer, it was certain that crystallgraphics and magnetic characteristics was improved.