Preparation of Co-Cr-Ta recording layers by FTS

FIS에 의한 Co-Cr-Ta 기록층의 제작

  • 공석현 (경원대학교 공대 전기전자공학부) ;
  • 손인환 (신성대학 전기과) ;
  • 박창옥 (가톨릭상지대학 전기전자정보계열) ;
  • 김재환 (광운대학교 전기공학과) ;
  • 김경환 (경원대학교 공대 전기전자공학부)
  • Published : 1999.05.01

Abstract

The Co-Cr-Ta films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrates. In this study, we investigated the effect underlayers on the growths layers of Co-Cr-Ta recording layers. The Co-Cr-Ta/Ti(CoCr) double layers were deposited with sputter gas pressure$(P_N, 0.3-1mTorr)$ by using FTS apparatus at temperature of$40^{\circ}C~-300^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry(XRD) and vibrating sample magnetometer(VSM), respectively.

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