E-beam Lithography using Plasma Processes

플라즈마 공정을 이용한 전자빔 리소그래피

  • 김성오 (인하대학교 전기공학과) ;
  • 이진 (목포대학교 전기공학과) ;
  • 이경섭 (동신대학교 전기공학과) ;
  • 이덕출 (인하대학교 전기공학과)
  • Published : 1999.05.01

Abstract

In this study, the PPPI(Plasma Polymerized Phenyl Isothiocyanate) resist thin film was manufactured in accordance with the plasma polymerization method and after exposing it to an electron beam, a pattern was formed by plasma etching. With the FT-IR(Fourier transform-infrared spectrometry) analysis, it was confirmed that the PI(Phenl Isothiocyanate) monomer was successsfully produced into a thin film by the plasma. The polymerization rate of the thin film was 450~ 1012($\AA$/min) to 100-200(W) discharge power and 120-12($\AA$/min) to 0.1 ~0.4[torr] system pressure.

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