• 한국세라믹학회지
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• 제45권9호
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• pp.556-560
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• 2008

The effects of Nb and Co ion substitution on the dielectric and magnetic properties of the multiferroic $BiFeO_3$ thin films have been investigated. Heteroepitaxial $BiFeO_3$ thin films were deposited by Pulsed Laser Deposition method. Nb substitution decreased the leakage current by 6 orders of magnitude and Co substituted $BiFeO_3$ thin films showed an enhanced magnetization, 2 times larger than that of un-substituted $BiFeO_3$. Through the co-substitution of Co and Nb, $BiFeO_3$ thin films with a low leakage current and an enhanced magnetization could be obtained.

• 멤브레인
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• 제32권5호
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• pp.357-365
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• 2022

최근 전기자동차용 이차전지 등의 수요가 급증하면서 효율적인 리튬 화합물의 생산이 큰 주목을 받고 있다. 바이폴라막 전기투석은 친환경적이며 경제성 및 효율성이 우수한 전기화학적 리튬 화합물 생산공정으로 알려져 있다. 바이폴라막 전기투석 공정의 효율은 바이폴라막의 성능에 의해 좌우되기 때문에 바이폴라막의 선택이 매우 중요하다. 본 연구에서는 세계적으로 가장 널리 사용되고 있는 대표적인 상용 BPM인 Astom사의 BP-1E 및 Fumatech사의 FBM을 비교 분석함으로써 전기화학적 LiOH 생산을 위한 BPED 공정에 적합한 BPM의 특성을 도출하고자 하였다. 체계적인 평가를 통해 BPM의 특성중 막의 이온전달저항 및 co-ion leakage를 줄이는 것이 가장 중요하고 이러한 관점에서 BP-1E가 FBM보다 더 우수한 성능을 가지고 있음을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 추계학술대회 논문집 전기설비전문위원
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• pp.301-304
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• 2008

In this paper, we study from of flowing leakage current in electrical installation. Leakage current is expressed by a resistivity leakage current($I_{gr}$), a capacitive leakage current($I_{gc}$), an inductivity leakage current($I_{gl}$). General Zero Phase Current Transformer (ZCT) detect a leakage current($I_{g}$) that are conjoined resistivity leakage current and capacitive leakage current. In case $I_{gr}$ is big than $I_{gc}$, there is no singular problem in leakage current detection of system. But, in case $I_{gc}$ is big than $I_{gr}$, earth leakage breaker can not prevent accident effectively. Can lower electric leakage perception current to 5 mA if apply resistivity leakage current detecting circuit. We can achieve prevention of electricity disaster spontaneously.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2018년도 추계학술논문요약집
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• pp.353-354
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• 2018

• 한국표면공학회지
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• 제32권3호
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• pp.389-392
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• 1999

We employed cobalt-disilicide for high-speed logic devices. We prepared stable and low resistant $CoSi_2$ through typical fabrication process including wet cleaning and rapid thermal process (RTP). We sputtered 15nm thick cobalt on the wafer and performed RTP annealing 2 times to obtain 60nm thick $CoSi_2$. We observed spherical shape voids with diameter of 40nm in the surface and inside $CoSi_2$ layers. The voids resulted in taking over abnormal junction leakage current and contact resistance values. We report that the voids in $CoSi_2$ layers are resulted from surface pits during the ion implantation previous to deposit cobalt layer. Silicide reaction rate around pits was enhanced due to Gibbs-Thompson effects and the volume expansion of the silicidation of the flat active regime trapped dimples. We confirmed that keeping the buffer oxide layer during ion implantation and annealing the silicon surface after ion implantation were required to prevent void defects in CoSi$_2$ layers.

• 한국진공학회지
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• 제17권1호
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• pp.1-8
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• 2008

포항가속기연구소 저장링에 설치된 방사광 차단용 진공부품에서 냉각수가 누설되었을 때의 진공도 분포, 압력 변화, 잔류 기체의 변화 등을 측정하여 그 특성을 분석하였다. 냉각수 누설 시에 압력 상승은 국부적으로 나타났으며 잔류 기체의 변화 양상은 누설 위치로부터 잔류기체 분석기까지 거리와 이온펌프 및 전자빔의 On/Off에 따라서 크게 달랐으며 특정 기체의 선택적 상승도 나타났다. 냉각수 누설의 발견은 전압변화 측정으로 가능하였으며 잔류기체 분석기로는 물분자를 직접 측정하기보다는 $CH_4$, CO, NO 등 특성 기체의 증가를 분석함으로 누설 여부를 판단할 수 있었다.

• 전자공학회논문지A
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• 제33A권7호
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• pp.134-142
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• 1996

The epi-CoSi$_{2}$ layer was formed by alloying a Co(120$\AA$)/Ti(50$\AA$) bilayer. In addition, the ultra shallow p$^{+}$n junction of which depth is about not more than 40nm at the background concentration, 10$^{18}$atoms/cm$^{3}$ could be formed by annealing (RTA-II) the ion implanted epi-silicide. When the temperature of RTA-I is as low as possible and that of RTA-II is moderate, the p$^{+}$n junction that has low leakage current and stable epi-silicide layer could be obtained. That is, when th econdition of TRA-I was 900$^{\circ}C$/20sec and that of RTA-II was 900$^{\circ}C$/10sec, the reverse leakage current was as high as 11.3$\mu$A/cm$^{2}$ at -5V. The surface of CoSi$_{2}$ appeared considerably rough. However, when the conditon of RTA-I was 800$^{\circ}C$/20sec or 700$^{\circ}C$/20sec, the leakage currents were as low as 8.3nA/cm$^{2}$ and 9.3nA/cm$^{2}$, respectively and also the surfaces appeared very uniform.

• 한국재료학회지
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• 제8권5호
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• pp.470-473
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• 1998

Co/Ti 이중막을 급속열처리하여 형성한 $CoSi_{2}$에 $As^+$을 이온주입한 후, 500~$1000^{\circ}C$에서 drive-in 열처리하여 매우얇은 $n_{+}$ p접합의 다이오드를 제작하고 I-V 특성을 측정하였다. $500^{\circ}C$에서 280초 drive-in 열처리하였을 때, 50nm정도의 매우 얇은접합이 형성되었고, 누설전류가 매우 낮아 가장 우수한 다이오드 특성을 나타내었다. 특히, Co 단일막을 사용한 다이오드에 비해 누설전류는 2order 이상 낮았으며, 이는 $CoSi_{2}$Si의 계면이 균일하였기 때문이다.

• Nuclear Engineering and Technology
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• 제33권1호
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• pp.83-92
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• 2001

The properties of off-gas generated from vitrification process of ion-exchange resin were characterized. Theoretical composition and flow rate of the off-gas were calculated based on chemical composition of resin and it＇s burning condition inside CCM. The calculated off-gas flow rate was 67.9Nm$^3$/h at the burning rate of 40kg/h. And the composition of off-gas was avaluated as $CO_2$(41.4%), steam(40.0%), $O_2$(13.3%), NO(3.6%), and SO$_2$(1.6%) in order. Then, actual flow rate and composition of off-gas were measured during pilot-scale demonstration tests and the results were compared with theoretical values. The actual flow rate of off-gas was about 1.6 times higher than theoretical one. The difference between theoretical and actual flow rates was caused by the in-leakage of air to the system, and the in-leakage rate was evaluated as 36.3Nm$^3$/h. Because of continuous change in the combustion parameters inside CCM, during demonstration tests, the concentration of toxic gases showed wide fluctuation. However, the concentration of CO, a barometer of incompleteness of combustion inside CCM, was stabilized soon. The result showed quasi-equilibrium state was achieved two hours after feeding of resin.

• 한국재료학회지
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• 제13권1호
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• pp.43-47
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• 2003

As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{＋}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{＋}$ , while little variation was observed in $CoSi_2$$p^{＋}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{＋}$ / and $CoSi_2$/$p^{＋}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.