• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.556-560
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• 2008

The effects of Nb and Co ion substitution on the dielectric and magnetic properties of the multiferroic $BiFeO_3$ thin films have been investigated. Heteroepitaxial $BiFeO_3$ thin films were deposited by Pulsed Laser Deposition method. Nb substitution decreased the leakage current by 6 orders of magnitude and Co substituted $BiFeO_3$ thin films showed an enhanced magnetization, 2 times larger than that of un-substituted $BiFeO_3$. Through the co-substitution of Co and Nb, $BiFeO_3$ thin films with a low leakage current and an enhanced magnetization could be obtained.

• Membrane Journal
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• v.32 no.5
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• pp.357-365
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• 2022

Recently, as the demand for secondary batteries for electric vehicles has rapidly increased, the efficient production of lithium compounds is attracting great attention. Bipolar membrane electrodialysis (BPED) is known as an eco-friendly, economical, and efficient electrochemical lithium compound production process. Since the efficiency of the BPED depends on the performance of the bipolar membrane (BPM), the selection of the BPM is very important. In this study, the characteristics of BPMs suitable for the BPED for electrochemical LiOH production were derived by comparative analyses of BP-1E (Astom) and FBM (Fumatech), which are the most widely used commercial BPMs in the world. Through systematical evaluation, it was confirmed that reducing membrane ion transfer resistance and co-ion leakage among the characteristics of BPM is the most important, and BP-1E has better performance than FBM in this respect.

• Proceedings of the KIEE Conference
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• 2008.09a
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• pp.301-304
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• 2008

In this paper, we study from of flowing leakage current in electrical installation. Leakage current is expressed by a resistivity leakage current($I_{gr}$), a capacitive leakage current($I_{gc}$), an inductivity leakage current($I_{gl}$). General Zero Phase Current Transformer (ZCT) detect a leakage current($I_{g}$) that are conjoined resistivity leakage current and capacitive leakage current. In case $I_{gr}$ is big than $I_{gc}$, there is no singular problem in leakage current detection of system. But, in case $I_{gc}$ is big than $I_{gr}$, earth leakage breaker can not prevent accident effectively. Can lower electric leakage perception current to 5 mA if apply resistivity leakage current detecting circuit. We can achieve prevention of electricity disaster spontaneously.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2018.11a
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• pp.353-354
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• 2018

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.389-392
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• 1999

We employed cobalt-disilicide for high-speed logic devices. We prepared stable and low resistant $CoSi_2$ through typical fabrication process including wet cleaning and rapid thermal process (RTP). We sputtered 15nm thick cobalt on the wafer and performed RTP annealing 2 times to obtain 60nm thick $CoSi_2$. We observed spherical shape voids with diameter of 40nm in the surface and inside $CoSi_2$ layers. The voids resulted in taking over abnormal junction leakage current and contact resistance values. We report that the voids in $CoSi_2$ layers are resulted from surface pits during the ion implantation previous to deposit cobalt layer. Silicide reaction rate around pits was enhanced due to Gibbs-Thompson effects and the volume expansion of the silicidation of the flat active regime trapped dimples. We confirmed that keeping the buffer oxide layer during ion implantation and annealing the silicon surface after ion implantation were required to prevent void defects in CoSi$_2$ layers.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.1-8
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• 2008

We analyzed the characteristics of water leakage from cooling components of the storage ring in the Pohang Light Source. The water leaks led localized pressure bumps and abnormal pressure changes. The leakage also changed the residual gas compositions depending not only on the position between leakage place to gas analyzer but also on on/off switching of ion pump and electron beam. We found that the residual gas analysis of $CH_4$, CO, NO was useful in determining water leaks.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.134-142
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• 1996

The epi-CoSi$_{2}$ layer was formed by alloying a Co(120$\AA$)/Ti(50$\AA$) bilayer. In addition, the ultra shallow p$^{+}$n junction of which depth is about not more than 40nm at the background concentration, 10$^{18}$atoms/cm$^{3}$ could be formed by annealing (RTA-II) the ion implanted epi-silicide. When the temperature of RTA-I is as low as possible and that of RTA-II is moderate, the p$^{+}$n junction that has low leakage current and stable epi-silicide layer could be obtained. That is, when th econdition of TRA-I was 900$^{\circ}C$/20sec and that of RTA-II was 900$^{\circ}C$/10sec, the reverse leakage current was as high as 11.3$\mu$A/cm$^{2}$ at -5V. The surface of CoSi$_{2}$ appeared considerably rough. However, when the conditon of RTA-I was 800$^{\circ}C$/20sec or 700$^{\circ}C$/20sec, the leakage currents were as low as 8.3nA/cm$^{2}$ and 9.3nA/cm$^{2}$, respectively and also the surfaces appeared very uniform.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.470-473
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• 1998

$As^+$ was ion-implanted onto $CoSi_{2}$ thin films formed by rapidly thermal-annealed Co/Ti bilayers. Then the specimens were drive-in annealed at 500~100$0^{\circ}C$ to form ultra-shallow $n^+$p junction diodes and to measure their 1- V characteristics. When drive-in annealed at 50$0^{\circ}C$ for 280 sec., 50 nm thick ultra-shallow junctions were formed and di¬odes showed the best 1- V characteristics with low leakage current. In particular. the leakage current was 2 orders lower than that of diodes formed by using Co monolayer. It was attributed to uniform $CoSi_{2}$/Si interfaces.

• Nuclear Engineering and Technology
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• v.33 no.1
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• pp.83-92
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• 2001

The properties of off-gas generated from vitrification process of ion-exchange resin were characterized. Theoretical composition and flow rate of the off-gas were calculated based on chemical composition of resin and it＇s burning condition inside CCM. The calculated off-gas flow rate was 67.9Nm$^3$/h at the burning rate of 40kg/h. And the composition of off-gas was avaluated as $CO_2$(41.4%), steam(40.0%), $O_2$(13.3%), NO(3.6%), and SO$_2$(1.6%) in order. Then, actual flow rate and composition of off-gas were measured during pilot-scale demonstration tests and the results were compared with theoretical values. The actual flow rate of off-gas was about 1.6 times higher than theoretical one. The difference between theoretical and actual flow rates was caused by the in-leakage of air to the system, and the in-leakage rate was evaluated as 36.3Nm$^3$/h. Because of continuous change in the combustion parameters inside CCM, during demonstration tests, the concentration of toxic gases showed wide fluctuation. However, the concentration of CO, a barometer of incompleteness of combustion inside CCM, was stabilized soon. The result showed quasi-equilibrium state was achieved two hours after feeding of resin.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.43-47
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• 2003

As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{＋}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{＋}$ , while little variation was observed in $CoSi_2$$p^{＋}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{＋}$ / and $CoSi_2$/$p^{＋}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.